MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOWIRF330 = IRF334 = IRF332 = IRF333 Ss IRF730 = IRF734 = IRF732 = IRF733 Siliconix N-Channel MOSPOWER FETs 400V Enhancement-Mode These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. r FEATURES Product Summary e rt s High Voltage Number | BYoss | Rosiom | Ip | Package ma No Second Breakdown IRF330 400V 55A s High Input Impedance inFs37 | asov | 103 a Internal Drain-Source Diode IRF332 400V = Very Rugged: Excellent SOA IAFI33 | aso | 8? | 4 8A u Extremely Fast Switching IRF730 400V son SBA IRF731 350V , , TO-220AB BENEFITS IRF732 400V 5A 9 u Reduced Component Count IAF7a3 | a60V oe a Improved Performance = Simpler Designs Z; s Improved Reliabilit Pp y ool s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Pulsed Drain Current (80us to 300us, 1% duty cycle).... + 22A IRF330, 332, 730,782... 2.6... ccc e cee e eee cece eens 400V IRF331, 333, 731,733... 0... eee eee nee 350V Gate Current (Peak) .. 0... eect eee aes + 3A Drain-Gate Voltage IRF330, 332, 730, 732.00... 00cc cece ccc e eee eens 400V Gate-Source Voltage 2.0... 6. cece eects +40V IRF331, 333, 731, 733.0... ee cece eee eee eee e eens 350V . gs entanes Maximum Power Dissipation .............0 00 -e seen 75W Continuous Drain Current, To = 25C : : IRF330, 331, 730, 731... 0. ss. eccececeeeesecetees 5.5A Linear Derating Factor... 1... cece eee eee 0.6 wi Cc IRF332, 333, 732, 733......... cc eee eee +4.5A Operating and Storage Temperature........... 55 to 150C PACKAGE DIMENSIONS [we (22.225) sm aaa ast es 1 R oe (3.429) MAX ~~ (6.85) , , ap TT 0.043 7.092) 0.352 SEATING aos 7oses) | in a 0875 17.148) 1.177 (29.896) 0.139 (3.54) 535) 0.655 (16.637) . . 0.188 TSN EAS wa lee * st oaao (71.176) Y fpn {| ? \ 420 (10.60) : : ozo frase AIK | 1 TS 7 0.461 (4.089) 045 (1.15) } abs Nai os 13.835) We es - 9.205" (5.207) orem view (13.335) BMAX je - :568 a e| PIN 1 Gate PIN 1 - Gate PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source TO-204AA (TO-3) TO-220AB 2-20 SiliconixElectrical Characteristics (Ic =25C unless otherwise specified) . Symbol | Parameter | Part Number | Min | Typ | Max Unit | Test Conditions Static IRF 330, 730 IRF 332, 732 | 400 BVpss Drain-Source Breakdown Vo | Ves =0, Ip = 250uA IRF 331, 731 3 IRF 333, 733 | 95 Vasith) Gate Threshold Voltage Alt 2 3.3 4 V_ | Ves=Vps, Ip=1tmA lass Gate Body Leakage All 10 +100 nA | Vgg=+#20V, Vps=0 loss Zero Gate Voltage Drain All 0.1 | 025 | 1, | VYos=Rated Vos, Vas =0 Current 05 | 1.0 Vps = Rated Vpg, Ves = 0, To = 125C IRF 330, 730 IRF 331, 731 og | 1 TDsyon) Drain-Source On a Q | Vgg=10V, Ip = 3A (Note 1) Resistance IRF 332, 732 12 15 IRF 333, 733 . . IRF 330, 730 IRF 331, 731| 55 | 8 'p(on) On-State Drain Current RF 332, 730 A_ | Vos=25V, Ves = 10V (Note 1) IRF 333,733 | 45 | 8 Dynamic dfs Forward Transconductance All 3 3.5 S| Vps = 100V, Ip = 3A (Note 1) Ciss Input Capacitance All 800 900 Reverse Transfer Cres Capacitance All 25 | 80 | BF | Vag=0, Vpg = 25V, f= 1MHz Common-Source Output Coss Capacitance All 150 300 taion) Turn-On Delay Time All 30 tr Rise Time All 38 | ag | VoD = 200V, Ip=3A, Ri =672, Rg = 109, tao) | Turn-Off Delay Time All 55 (Figure 1) te Fall Time All 35 Drain-Source Diode Characteristics Typ. Vsp Forward ON Voltage All -1.4 v Ig =5.5A (Note 1) Ip =IR=5.5A, Veg =9, tr Reverse Recovery Time All 400 ns is gure 2) cs Note 1: Pulse Test 80us to 300 ys, 1% duty cycle Refer to VNDA40 Design Curves (See Section 4) s CIRCU TS FIGURE 2 Reverse Recovery Test Circuit pe FIGURE 1 Switching Test Circuit 502 di/dt Adjust (1 - 27 tH} oa 5 TO 50uF IN4933 Fr _ ewyAdiust \ | e rT | nw + | Loy 9 240.9 f Regen OUT + > 1N4001 | | 4000uF -~pi- | \ - 20v | R$ 0.252 | L$ 0.01uH CIRCUIT = ld e la A 1 purse | | Gaber = | +- WA [GENERATOR] [TEST _ meres 2naao4 SCOPE PW. = 1 ps Cg <50 pF rYYyYs DUTY CYCLE = 1% FROM TRIGGER CKT Siliconix CeZsddl = COLA = LEZAl = OCZIal eceddl = CECdal = LECdal = OCesalTYPICAL STATIC CHARACTERISTICS (Pulse width 80us300)s, Duty cycle 1%, Tc =25C) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, Ip DRAIN CURRENT (AMPS) K, NORMALIZED ON RESISTANCE IRF 332, IRF333, IRF730, [RF731, IRF732, IRF733 Ohmic Region 20 16 Vas =20V 12 Vosisar) DRAIN SOURCE SATURATION VOLTAGE (VOLTS) 0 Qo 10 20 30 40 50 Vos DRAIN-SOURCE VOLTAGE (VOLTS) Temperature Effects on rpsjon) 2.4 a 2.0 = 2 8 1.6 Y z & 1.2 a wi LL) z 0.8 7 : 5 B 1 0.4 g 0 ~50-25 0 25 50 75 100 125 150 175 Ty JUNCTION TEMPERATURE (C) Transfer Characteristics VNDA4O Voltage Saturation Region 20 16 8A 6A 4A 2A 0 2 4 6 + 8 0 12 0 Vas Vesith GS(th) GATE ENHANCEMENT VOLTAGE (VOLTS) ON Resistance Characteristics 1:8 Ip = 10A 1.6 1.4 1.2 1.0 0.8 oO 0 2.4 6 8 10 12 Vas Vasith): GATE ENHANCEMENT VOLTAGE (VOLTS) Output Characteristics 10 BEC 20 Vos = 50V t a 25C a 8 a = 125C = 16 < = E & z 6 a 12 x ec a > > Oo z 4 Zz 8 < < a i 2 25C I 4 3 4 3 125C 3 0 2 4 6 8 0 40 120. 160 200 Vas ~ GATE SOURCE VOLTAGE (VOLTS) Vos DRAIN-SOURCE VOLTAGE (VOLTS) 01/83 Siliconix 4-5 OVVONATRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF 333, IRF730, IRF731, IRF732, IRF733 Safe Operating Area, Active Region, TO-3 Package VNDA40 Safe Operating Area, Active Region, TO-220AB Package 100 10 y oe 10 ys J = 50 [CURRENT DEPENDS a < J NounneNr. | 4 2 UPON rps(on) a DEPENDS 7 = 20 = L WN UPON rosion\ | J = 10 | VN9S008 = 2 NNR N 100 us o . a ~ \S alle VN3501A & 4b-Tc=28 NS | 1 2 = [VN4001A 3 E NAAN CH iins 4 = 10 2 ost | NS N | 1 = 1 + A-IRF331,3,731,3 NA Nio ms 4 Oo 08 a | B-IRF330, 2,730, 2 1 4 I N a 5 pc 1 g.a|_ C-IRE330, 1 730, 1 DC NJ} 100 ms = oe To = 25C gg %2)~D-RF332,3 732, 3 0.1 0.4 | 1 Lol 1 Lit 10 20 50 100 200 500 1000 10 620 50 100 200 500 1000 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Vps - DRAIN SOURCE VOLTAGE (VOLTS) Power Derating Safe Operating Area, Switching 150 1.50 20 = 125 1.28 a A SUFFIX x 16 z s = 9 )} << ~ =< 100 10 Oo a Po| 5 612 a a N\ A rd oo. 21 Kp | & SUFFIX ons 2 D SUFFIX Bj a aX) Rac = 12 cw) ZO 2 12 i A 9 2 21> = 50 NOAA oso = SWITCHING LOAD 8 is 2 SeN N\ 9 5 LINES MUST LIE S > D SUFFIX | MOS 9 7 gL WITHIN THis AREA | [5 | ao 25 } {Pp SS 0.25 a VALID FOR t, AND t+ a Rajc = 1.67C/W = UNDER ONE | | 0 MICROSECOND Q 0 25 50 75 100 125 150 175 0 100 200 300 400 500 Tc CASE TEMPERATURE (C) Vps DRAIN SOURCE VOLTAGE (VOLTS) The safe operating area data of Active Region, TO-3 Package and Active Region, TO-220AB Package indicates maximum operating current Thermal Response as a function of voltage and time at Tg = 25C. At 1.0F Trim ty elevated temperatures, power must be derated E > using the derating factor, Kp from Power fe a Derating. Current limitations imposed by "psion) [ Zo | 7] are not shown except at 25C. When operating in | D SUFFIX Zz J fheonmic region, the maximum current is found = = E A SUFFIX 4 lo= (-Pg) 7 or K, Fpsion) @ 25C 4 where Pp is the power dissipation at operating + case temperature and rpgin) is the on resistance for the part. K, is the multiplying factor for on-re- 0.0 Pett ui tot vit bd tty {LU pdb i sistance at the maximum rated junction tempera- 0.01 0.1 1.0 10 100 1000 ture taken from Temperature Effects on rpgion)- TIME (mS) Since on-resistance varies somewhat with cur- rent, some iteration of Ip and rpgion) Must be done using ON Resistance Characteristics as a guide. SiliconixTYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF333, IRF730, IRF731, IRF732, IRF733 SWITCHING TIME Eftects of Load Conditions z z ul = = - - g g = = g eg 5 5 | I Vin = 10V = 100 1 2 3C4 8 10 Ip DRAIN CURRENT (AMPS) CHARGE Turn-On Charge 400 Vos = 200V 300 Sow 200 Vas GATE-SOURCE VOLTAGE (VOLTS) Vos DRAIN SOURCE VOLTAGE (VOLTS) (SLIOA) JOVLIOA ZOUNOS BLVD SPA 0 5 10 15 20 25 30 35 Q CHARGE (nC) VNDA4O Effects of Drive Resistance 1000 FT TT TTT q TTR Vin = 10V qa 500 | Vop = 200V. L Ip=3A 4 . taotfy A 200 100 |- 4 50. Z LL en | 20 tf ~ t 1 10 Lert pitiin 1 2 5 10 20 50 100 Rs -- SOURCE RESISTANCE (OHMS) Turn-Off Charge 16 400 Ry = 1000 =10V 0 5 10 15 20 25 30 @ CHARGE (nC) Switching Time Equations Qu Vos tayon) = 2 Agen In {| d(on) Vogt gen (es _ Vor Qg2o-Q Veg-V t= 9 8 Eg in VSS = *) Vg2 7 Vgi Veo 7 Vg2 OFF ON Vos 90% Vaa Voi Vga -10% ! 4 Qg1 Qg2 Qgs TURN-ON Qos Qg2 taotty = 9 Rgen In Vac ~ Vg2 Voge ~ "gt gi ON OFF vi Vea "7 ps \ Vg2 Vgi 2] T Qga Qg2 Qg: TURN-OFF 200 100 (SL10A) ADVLIOA JDUNOS-NIVEG SOA Siliconix OVVGNA