Diodes Switching diodes Type Fig. nao ratings Characteristics Notes | Nr [py at lp [Un [Rina |Upat Ie [Cpat UR jaat lp |i lamb = 45C mw mA Vv C/w Vv mA pF Vv Q mA ps | BA 173 1 300 |300 |<450 j|<1 100 |<2 150 0,35') | Clamping diode BA1 76 1 =1,5 |400 Aerial protection diode *) | 'BA 178 3 100 135 |=400 |=1,2 |100 /=1,3 |30 /[<1,3 |5 RF switching diode | [BA 82 3 100 |35 = 400 = 1,2 100 | <1 20 =0,7 5 RF switching diode | BA 243 2 100 [20 |<350 [<1 100 |<2 15 <1 10 RF switching diode | BA 244 2 100 }20 |<350 |=14 100 15 |<0,5 1/10 RF switching diode | BAW 24 2 |440 600 |40 /<350 |<1,2 /200 0 0,006) | BAW 25 2 | 440 600 |40 |<350 |=<1 200 |<4 oO 0,006) | BAW 26 2 |440 600 |60 /|<350 |=1,2 |200 |<4 Q 0,006") | | BAW 27 2 |440 600 {60 |<350 |<1,25 |400 /<4 0 0,006") | BAY 68 2 |440 115 /25 |<350 |=1 100 |<=5 0 0,01") BAY 69 2 |440 14145 50 |<350 |=14 100 |<5 0 0,01!) | t 4 BAY 92 1 230%) 100 |600 |<450 j|=1 100 |<4 10 0,35') BAY 93 2 | 440 115 |20 |<=350 |=1 10 0 0,015') 1N41480 |/2 | 440 200 |75 |<350 |=1 10 |<4 0 0,008') in4ai4g (2 [440 200 75 |<350 |=<1 10 0 0,008') | 1N 41510 12 | 440 200 |50 |<350 |<1 50 OQ 0,004') 1N4154 [2 | 440 200 /25 |<350 |=<1 30 Q 0,004") | 4N44460 |2 |440 ~~ 200 [75 |<350 [=1 20 |s4 0 0,008') iN4aa7|2s | 440 200 |75 |<350 /<1 20 |<2 9 0,008') | 1N44480 |2 | 440 200 | 75 |=350 |=1 100 |=4 O 0,008") : |1N4449 2 =| 440 200 | 75 |<350 |51 30 |s2 0 0,008') Remarks: 1) Ie = Ig = 10 MA, ip = 1MA;*) Ig = 1 HA, U gay = 100 V, 2 = 0,01, fy = 0,3 ms; ) Ip = Ip = 10...100 MA, ip = 0,1 Ip; ) At lamb = 25C Data book reference:B 2B Can be delivered as "Qualified semiconductor device KATHODE CATHODE J}. 226 20,55 sur 26 42- Fig. 1: 51 A2 DIN 41880 JEDEC DO 7 5109 ATHODE Fig. 2: 54 A 2 DIN 41880 JEDEC DO 35 55 ~ 4,1 et 12,5 -_w#| 9124 Fig. 3: Plastic case SOD 23