R07DS0987EJ0400 Rev.4.00 Page 1 of 7
Aug 25, 2015
Preliminary Datasheet
CR03AM-16A
800V-0.3A-Thyristor
Low Power Use
Features
IT (AV) : 0.3 A
VDRM : 800 V
IGT: 100 A
RoHS Compliant
Non-Insulated Type
Planar Passivation Type
Halogen-free package (PRSS0003DJ-A)
Completely Pb-free package (PRSS0003DJ-A
Outline
2
1
3
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
1. Cathode
2. Anode
3. Gate
3
1
2
RENESAS Package code: PRSS0003DJ-A
(Package name: TO-92)
3
1
2
Applications
Leakage protector, timer, and gas igniter
Maximum Ratings
Parameter Symbol
Voltage class Unit
16
Repetitive peak reverse voltage VRRM 800 V
Non-repetitive peak reverse voltage VRSM 960 V
DC reverse voltage VR(DC) 640 V
Repetitive peak off-state voltage Note1 V
DRM 800 V
Non-repetitive peak off-state voltage Note1 V
DSM 960 V
DC off-state voltage Note1 V
D(DC) 640 V
Notes: 1. With gate to cathode resistance RGK = 1 k
R07DS0987EJ0400
Rev.4.00
A
ug 25, 2015
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 2 of 7
Aug 25, 2015
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT(RMS) 0.47 A
Average on-state current IT(AV) 0.3 A Commercial frequency, sine half wave
180 conduction, Ta=62C
Surge on-state current ITSM 20 A 60Hz sine half wave, 1full cycle,
peak value, non-repetitive
I2t for fusing I2t 1.6 A2s Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG(AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj – 40 to +125 C
Storage temperature Tstg – 40 to +125 C
Mass — 0.23 g Typical value
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 0.1 mA Tj = 125C, VRRM applied
Repetitive peak off-state current IDRM — — 0.1 mA Tj = 125C, VDRM applied
RGK = 1 k
On-state voltage VTM — — 1.8 V Tj = 25C, ITM = 4 A
instantaneous value
Gate trigger voltage VGT — — 0.8 V Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Gate non-trigger voltage VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM
RGK = 1 K
Gate trigger current IGT 1
Note2 — 100 Note2 A Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Holding current IH — — 3 mA Tj = 25°C, VD = 12 V, RGK = 1 k
Thermal resistance Rth(j-a) — — 180 C/W Junction to ambient
Notes: 2. If special values of IGT are required, choose it em A, B, D or E from those listed in the table below if possible.
Item A B D E
IGT (A) 1 to 30 20 to 50 1 to 50 20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
3V
DC
I
GS
I
GT
6V
DC
60
Ω
V
GT
2
1
T
UT
1
k
Ω
R
GK
A
3
A2
V1
A1
S
witc
h
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 3 of 7
Aug 25, 2015
Performance Curves
–400 4080 120 160
–400 4080 120 160
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
×
100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
8
4
12
16
20
0
200
0
80
120
160
40
1.0
0.8
0.6
0.4
0
0.2
Typical Example
Typical Example
Typical Distribution
40123
101
100
10−1
10−2
103
102
101
100
Ta = 25°C
100101102
100101102103
V
FGM
= 6V
V
GT
= 0.8V
(Tj = 25°C)
I
GT
= 100μA
(Tj = 25°C)
P
GM
= 0.5W
V
GD
= 0.2V I
FGM
= 0.3A
P
G(AV)
= 0.1W
102
101
100
10−1
100101102
10−1
100
10−1
10−2
10−3
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 4 of 7
Aug 25, 2015
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Ambient Temperature (°C)Ambient Temperature (°C) Ambient Temperature (°C)
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
Average On-State Current (A)
160
120
60
40
20
140
100
80
0
θ = 30°
60°120°
90°180°
0.3
0.2
0.1
0.4
00.50.4
00.1 0.2 0.3 0.50.40 0.1 0.2 0.3
0.50.40 0.1 0.2 0.3 0.50.40 0.1 0.2 0.3
0.50.40 0.1 0.2 0.3 0.50.40 0.1 0.2 0.3
0.5
θ = 30°
60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
0
θ = 30°
60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
0
θ = 30°
60°
90°
180°270°
DC
120°
160
120
60
40
20
140
100
80
0
θ = 30 °
120°
180°
DC
270°
60°
90°
160
120
60
40
20
140
100
80
0
60°120°180°θ = 30°90°
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
θ θ
360°
Resistive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 5 of 7
Aug 25, 2015
10
4
10
3
10
2
10
1
160
120
60
40
20
140
100
80
0
10
2
10
1
10
0
10
−1
–40 0 40 80 120 160 –40 0 40 80120160
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
×
100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
160
120
60
40
20
140
100
80
0
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/μs)
×
100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
V
D
=12V
R
GK
=1kΩ
Junction Temperature (°C)
×
100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example
–40 0 40 80 120 160
R
GK
= 1kΩ
Typical Example
160
120
60
40
20
140
100
80
0
10
0
10
1
10
2
10
3
10
1
10
2
10
3
Typical Example
Typical Example
Typical Distribution
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Current Pulse Width (μs)
Gate Trigger Current (μA)
Ta = 25°C
Typical Example Tj = 125°C
RGK=1kΩ
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 6 of 7
Aug 25, 2015
Package dimensions
SC-43A 0.23g
MASS[Typ.]
T920PRSS0003EA-A
RENESAS CodeJEITA Package CodePrevious CodeUnit: mm
φ5.0Max
4.4
3.6
11.5Min5.0Max
1.25
Circumscribed circle φ0.7
1.25
1.1
Package Name
TO-92*
MASS (Typ) [g]
0.23
Unit: mm
Previous CodeRENESAS Code
PRSS0003DJ-A TO-92
JEITA Package Code
SC-43A
4.58 ± 0.2
14.47 ± 0.4
1.02 ± 0.1
0.46 ± 0.1
1.27
(3.86 MAX)
0.38
+0.10
−0.05
4.58
+0.25
−0.15
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 7 of 7
Aug 25, 2015
Ordering Information
Orderable Part Number Package Packing Note Quantity Remark
CR03AM-16A#B00 TO-92* Plastic Bag 500 pcs. Straight type
CR03AM-16A-#B00 TO-92* Plastic Bag 500 pcs. Straight type, :IGT item
CR03AM-16A-A6#B00 TO-92* Plastic Bag 500 pcs. A6 Lead form
CR03AM-16A-T B#B00 T O-92* Adhesive Tape 2000 pcs. A8 Lea d form
CR03AM-16A-TB#B00 TO-92* Adhesive Tape 2000 pcs. A8 Lead form, :IGT item
CR03AM-16A #BD0 TO-92 Plastic Bag 1000 pcs. Straight type, Halogen-free
CR03AM-16A-#BD0 TO-92 Plastic Bag 1000 pcs. Straight type, Halogen-free, :IGT item
CR03AM-16A-A6#BD0 TO-92 Plastic Bag 1000 pcs. A6 Lead form, Halogen-free
CR03AM-16A-T B#BD0 TO-92 Adhesive Tape 2000 pcs. A8 Lead form, Halogen-free
CR03AM-16A-TB#BD0 TO-92 Adhesive Tape 2000 pcs. A8 Lead form, Halogen-free, :IGT item
Note : Please confirm the specification about the shipping in detail.
Notice
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Refer to "http://www.renesas.com/" for the latest and detailed information.
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