IPB64N25S3-20
OptiMOS
®
-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
C
=25 °C, V
GS
=10 V 64 A
T
C
=100°C, V
GS
=10V
1)
46
Pulsed drain current
1)
I
D,pulse
T
C
=25°C 256
Avalanche energy, single pulse
1)
E
AS
I
D
=27A 270 mJ
Avalanche current, single pulse I
AS
-27 A
Reverse diode dv/dtdv/dt6kV/µs
Gate source voltage V
GS
-±20V
Power dissipation P
tot
T
C
=25°C 300 W
Operating and storage temperature T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 250 V
RDS(on),max 20 m
ID64 A
Product Summary
PG‐TO263‐3‐2
Type Package Marking
IPB64N25S3-20 PG-TO263-3-2 3PN2520
Rev. 1.1 page 1 2014-09-12
IPB64N25S3-20
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1), 3)
Thermal resistance, junction - case R
thJC
---0.5K/W
Thermal resistance, junction -
ambient, leaded R
thJA
---62
SMD version, device on PCB R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0V, I
D
= 1mA 250 - - V
Gate threshold voltage V
GS(th)
V
DS
=V
GS
, I
D
=270µA 2.0 3.0 4.0
Zero gate voltage drain current I
DSS
V
DS
=250V, V
GS
=0V -0.11µA
V
DS
=250V, V
GS
=0V,
T
j
=125°C
2)
- 10 100
Gate-source leakage current I
GSS
V
GS
=20V, V
DS
=0V - 1 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=64A - 17.5 20 m
Values
Rev. 1.1 page 2 2014-09-12
IPB64N25S3-20
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
1)
Input capacitance C
iss
- 5240 7000 pF
Output capacitance C
oss
- 2900 3900
Reverse transfer capacitance C
rss
- 85 170
Turn-on delay time t
d(on)
-18-ns
Rise time t
r
-20-
Turn-off delay time t
d(off)
-45-
Fall time t
f
-12-
Gate Char
g
e Characteristics
1)
Gate to source charge Q
gs
-2431nC
Gate to drain charge Q
gd
-1122
Gate charge total Q
g
-6789
Gate plateau voltage V
plateau
-4.8-V
Reverse Diode
Diode continous forward current
1)
I
S
--64A
Diode pulse current
1)
I
S,pulse
- - 256
Diode forward voltage V
SD
V
GS
=0V, I
F
=64A,
T
j
=25°C -11.2V
Reverse recovery time
1)
t
rr
V
R
=125V, I
F
=50A,
di
F
/dt=100A/µs - 174 - ns
Reverse recovery charge
1)
Q
rr
- 1095 - nC
Values
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=100V, V
GS
=10V,
I
D
=25A, R
G
=1.6
V
DD
=200V, I
D
=64A,
V
GS
=0 to 10V
3)
Devices thermal performance determined according to EIA JESD 51-14
"Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance"
1)
Defined by design. Not subject to production test.
T
C
=25°C
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1 page 3 2014-09-12
IPB64N25S3-20
1 Power dissipation 2 Drain current
P
tot
= f(T
C
); V
GS
≥ 6 V I
D
= f(T
C
); V
GS
≥ 6 V; SMD
3 Safe operating area 4 Max. transient thermal impedance
I
D
= f(V
DS
); T
C
= 25 °C; D = 0; SMD Z
thJC
= f(t
p
)
parameter: t
p
parameter: D=t
p
/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100 1000
ID[A]
VDS [V]
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
ZthJC [K/W]
tp[s]
0
50
100
150
200
250
300
350
0 50 100 150 200
Ptot [W]
TC[°C]
0
20
40
60
80
0 50 100 150 200
ID[A]
TC[°C]
Rev. 1.1 page 4 2014-09-12
IPB64N25S3-20
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C; SMD R
DS(on)
= f(I
D
); T
j
= 25 °C; SMD
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
I
D
= f(V
GS
); V
DS
= 6V R
DS(on)
= f(T
j
); I
D
= 64 A; V
GS
= 10 V; SMD
parameter: T
j
5
15
25
35
45
55
-60 -20 20 60 100 140 180
RDS(on) [m]
Tj[°C]
5.5 V
6 V
10 V
0
50
100
150
200
250
0246810
ID[A]
VDS [V]
4.5 V
5 V
5.5 V
6 V
10 V
15
17
19
21
23
25
0 102030405060
RDS(on) [m]
ID[A]
-55 °C
25 °C
175 °C
0
32
64
96
128
160
192
224
256
34567
ID[A]
VGS [V]
Rev. 1.1 page 5 2014-09-12
IPB64N25S3-20
9 Typ. gate threshold voltage 10 Typ. capacitances
V
GS(th)
= f(T
j
); V
GS
= V
DS
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz
parameter: I
D
11 Typical forward diode characteristicis 12 Avalanche characteristics
IF = f(V
SD
)I
A S
= f(t
AV
)
parameter: T
j
parameter: T
j(start)
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
27 µA
270 µA
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
102
103
104
0 50 100 150 200 250
C[pF]
VDS [V]
101
25 °C
100 °C
150 °C
1
10
100
1 10 100
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
Rev. 1.1 page 6 2014-09-12
IPB64N25S3-20
13 Avalanche energy 14 Drain-source breakdown voltage
E
AS
= f(T
j
)V
BR(DSS)
= f(T
j
); I
D
= 270 µA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 64 A pulsed
parameter: V
DD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
230
235
240
245
250
255
260
265
270
275
280
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
80 V
200 V
0
1
2
3
4
5
6
7
8
9
10
020406080
VGS [V]
Qgate [nC]
27 A
13.5 A
6.75 A
0
200
400
600
800
1000
1200
25 75 125 175
EAS [mJ]
Tj[°C]
Rev. 1.1 page 7 2014-09-12
IPB64N25S3-20
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1 page 8 2014-09-12
IPB64N25S3-20
Revision History
Version
Revision 1.0
Revision 1.1
Date
2012-10-18
2014-09-12
Changes
Final Data Sheet
Through-hole parts removed
Rev. 1.1 page 9 2014-09-12