DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2708TB UE D 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The PC2708TB has compatible pin connections and performance to PC2708T of conventional minimold version. So, in the case of reducing your system size, PC2708TB is suitable to replace from PC2708T. This IC is manufactured using NEC's 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon IN nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES High-density surface mounting Wideband response Medium output power Supply voltage Power gain Port impedance APPLICATIONS : 6-pin super minimold package (2.0 x 1.25 x 0.9 mm) : fu = 2.9 GHz TYP. @ 3 dB bandwidth : PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor : VCC = 4.5 to 5.5 V : GP = 15 dB TYP. @ f = 1 GHz : input/output 50 NT * * * * * * SC O * 1st IF amplifiers in BS/CS converters, etc. * 1st IF stage buffer in BS/CS tuners, etc. ORDERING INFORMATION Part Number PC2708TB-E3 Package 6-pin super minimold Marking Supplying Form C1D Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your nearby sales office (Part number for sample order: DI PC2708TB-A). Document No. P13442EJ3V0DS00 (3rd edition) Date Published November 2000 N CP(K) Caution Electro-static sensitive devices The mark shows major revised points. PC2708TB PIN CONNECTIONS 1 Pin No. Pin Name 1 INPUT GND 4 4 3 2 5 5 2 3 GND 6 6 1 4 OUTPUT 5 GND D 2 (Bottom View) UE 3 C1D (Top View) 6 VCC PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25C, VCC = Vout = 5.0 V, ZS = ZL = 50 ) fu (GHz) PO(sat) (dBm) GP (dB) 2.9 +10.0 15 PC2708T PC2708TB PC2709T PC2710T PC2710TB 1.0 PC2776T PC2776TB 23 6.5 @f = 1 GHz 26 5 @f = 1 GHz 25 +13.5 +8.5 33 23 Package C1D 6-pin super minimold 6-pin minimold C1E 6-pin super minimold 3.5 @f = 0.5 GHz 22 6.0 @f = 1 GHz 25 6-pin minimold C1F 6-pin super minimold 6-pin minimold C2L 6-pin super minimold Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. DI Caution The package size distinguishes between minimold and super minimold. 2 Marking 6-pin minimold SC O Remark 2.7 +11.5 ICC (mA) NT PC2709TB 2.3 NF (dB) IN Part No. Data Sheet P13442EJ3V0DS00 PC2708TB SYSTEM APPLICATION EXAMPLE EXAMPLE OF DBS CONVERTERS RF Amp. Mixer PC2711TB PC2712TB IF Amp. D BS Antenna (DBS ODU) Parabola Antenna To IDU UE PC2708TB Oscillator EXAMPLE OF 2.4 GHz BAND RECIEVER RX IN DEMOD. NT PLL SW PLL I 0 Driver PA SC O TX 90 Q DI PC2708TB I Q Data Sheet P13442EJ3V0DS00 3 PC2708TB PIN EXPLANATION 4 OUTPUT 6 GND Voltage as same as VCC through external inductor 4.5 to 5.5 0 1.16 - - Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. - Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. DI Note Pin voltage is measured at VCC = 5.0 V 4 Internal Equivalent Circuit Signal input pin. A internal matching circuit, configured with resistors, enables 50 connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. SC O 2 3 5 VCC - Function and Applications Note (V) D INPUT Pin Voltage UE 1 Applied Voltage (V) 6 VCC 4 OUT IN Pin Name IN 1 NT Pin No. Data Sheet P13442EJ3V0DS00 3 GND 2 5 GND PC2708TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit VCC TA = +25C, Pin 4 and 6 6 V Total Circuit Current ICC TA = +25C 60 mA Power Dissipation PD Mounted on doublesided copper clad 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85C) Operating Ambient Temperature TA Storage Temperature Tstg Input Power Pin D Supply Voltage RECOMMENDED OPERATING RANGE -40 to +85 C -55 to +150 C +10 dBm Symbol MIN. TYP. MAX. Unit Remark Supply Voltage VCC 4.5 5.0 5.5 V The same voltage should be applied to pin 4 and 6. Operating Ambient Temperature TA IN Parameter mW UE TA = +25C 270 -40 +25 +85 C ELECTRICAL CHARACTERISTICS (TA = +25C, VCC = Vout = 5.0 V, ZS = ZL = 50 ) Circuit Current Power Gain Saturated Output Power Noise Figure Symbol Test Conditions NT Parameter TYP. MAX. Unit 20 26 33 mA ICC No input Signal GP f = 1 GHz 13.0 15.0 18.5 dB f = 1 GHz, Pin = 0 dBm +7.5 +10.0 - dBm - 6.5 8.0 dB 3 dB down below flat gain at f = 0.1 GHz 2.7 2.9 - GHz PO(sat) NF f = 1 GHz fu SC O Upper Limit Operating Frequency MIN. ISL f = 1 GHz 18 23 - dB Input Return Loss RLin f = 1 GHz 8 11 - dB Output Return Loss RLout f = 1 GHz 16 20 - dB Gain Flatness GP f = 0.1 to 2.6 GHz - 0.8 - dB DI Isolation Data Sheet P13442EJ3V0DS00 5 PC2708TB TEST CIRCUIT VCC C3 L 6 C1 1 000 pF Value C1, C2 Bias Tee 1 000 pF C3 Capacitor 1 000 pF L Bias Tee 1 000 nH EXAMPLE OF ACTURAL APPLICATION COMPONENTS Type Value Operating Frequency C1 to C3 Chip Capacitor 1 000 pF 100 MHz or higher L Chip Inductor 300 nH 10 MHz or higher 100 nH 100 MHz or higher 10 nH 1.0 GHz or higher NT Type IN COMPONENTS OF TEST CIRCUIT CHARACTERISTICS 50 OUT 1 000 pF 2, 3, 5 FOR MEASURING ELECTRICAL C2 4 1 UE 50 IN D 1 000 pF INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output SC O transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial DI impedance. Their capacitance are therefore selected as lower impedance against a 50 load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 Rfc). 6 Data Sheet P13442EJ3V0DS00 PC2708TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD D AMP-2 OUT 1D 1 2 IN UE 3 Top View C 6 L 5 4 C C Mounting Direction VCC Value C 1 000 pF L 300 nH Notes NT COMPONENT LIST IN C 1. 30 x 30 x 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern : Through holes 4. For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF DI SC O SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E). Data Sheet P13442EJ3V0DS00 7 PC2708TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 40 No input signal 35 VCC = 5.0 V 30 30 20 15 10 5 2 3 4 Supply Voltage VCC (V) 5 NOISE FIGURE, POWER GAIN vs. FREQUENCY 20 9 10 0 -60 -40 -20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (C) 6 POWER GAIN vs. FREQUENCY 20 VCC = 5.0 V TA = -40C NT Power Gain GP (dB) Noise Figure NF (dB) VCC = 5.5 V 6 15 IN 1 GP 15 VCC = 5.5 V VCC = 5.0 V 10 NF VCC = 4.5 V VCC = 5.0 V SC O VCC = 4.5 V Power Gain GP (dB) 0 7 20 5 0 8 25 UE Circuit Current ICC (mA) Circuit Current ICC (mA) 25 D 35 No input signal TA = +85C TA = +25C 15 TA = +85C TA = -40C TA = +25C 5 5 0.1 0.3 1.0 Frequency f (GHz) 10 0.1 3.0 0.3 1.0 Frequency f (GHz) INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY ISOLATION vs. FREQUENCY 0 0 VCC = 5.0 V -30 -40 -50 0.1 8 0.3 1.0 Frequency f (GHz) 3.0 VCC = 5.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) -20 DI Isolation ISL (dB) -10 3.0 -10 RLin -20 RLout -30 -40 0.1 Data Sheet P13442EJ3V0DS00 0.3 1.0 Frequency f (GHz) 3.0 PC2708TB OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 +15 f = 1.0 GHz f = 1.0 GHz VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V -5 -10 -15 0 -25 -20 -15 -10 -5 Input Power Pin (dBm) 0 -5 -10 -20 -30 +5 OUTPUT POWER vs. INPUT POWER -25 -5 -20 -15 -10 Input Power Pin (dBm) 0 +5 OUTPUT POWER vs. INPUT POWER IN +15 +15 VCC = 5.0 V f = 2.0 GHz f = 1.0 GHz VCC = 5.5 V +5 VCC = 5.0 V VCC = 4.5 V +5 f = 2.0 GHz 0 NT 0 Output Power Pout (dBm) +10 +10 Output Power Pout (dBm) TA = -40C -15 -20 -30 -5 -10 -15 f = 2.9 GHz -5 -10 -15 -25 -20 -15 -10 -5 Input Power Pin (dBm) 0 SC O -20 -30 -20 -30 +5 Pin = 0 dBm VCC = 5.5 V VCC = 5.0 V +10 VCC = 4.5 V DI +5 0 0.1 0.3 1.0 Frequency f (GHz) 3.0 3rd Order Intermodulation Distotion IM3 (dBc) +15 -25 -20 -15 -10 -5 Input Power Pin (dBm) 0 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE SATURATED OUTPUT POWER vs. FREQUENCY Saturated Output Power PO (sat) (dBm) TA = +25C D 0 +5 UE VCC = 5.0 V +5 Remark TA = +85C +10 Output Power Pout (dBm) Output Power Pout (dBm) +10 60 f1 = 1 .000 GHz f2 = 1 .002 GHz 50 VCC = 5.0 V 40 VCC = 5.5 V 30 VCC = 4.5 V 20 10 -10 -8 -6 -4 -2 0 +2 +4 +6 +8 +10 Output Power of Each Tone PO (each) (dBm) The graphs indicate nominal characteristics. Data Sheet P13442EJ3V0DS00 9 PC2708TB S-PARAMETERS (TA = +25C, VCC = Vout = 5.0 V) 1.0 GHz UE D S11-FREQUENCY 2.0 GHz 0.1 GHz NT SC O S22-FREQUENCY IN 3.0 GHz 3.0 GHz 0.1 GHz DI 2.0 GHz 10 Data Sheet P13442EJ3V0DS00 PC2708TB TYPICAL S-PARAMETER VALUES (TA = +25C) VCC = Vout = 5.0 V, ICC = 27 mA S12 S22 MAG. ANG. MAG. ANG. MAG. ANG. 100.0000 0.039 138.9 5.815 -4.8 0.077 -0.8 200.0000 0.053 119.7 5.822 -9.8 0.075 -1.5 300.0000 0.069 106.7 5.815 -14.3 0.074 -0.6 400.0000 0.088 97.2 5.813 -18.8 500.0000 0.105 91.6 5.794 -23.8 600.0000 0.123 84.9 5.823 -28.4 700.0000 0.144 79.7 5.871 -33.0 800.0000 0.164 74.7 5.890 -38.2 900.0000 0.186 70.7 5.938 -42.8 1000.0000 0.205 66.1 5.960 -47.6 1100.0000 0.226 61.7 6.072 -52.7 1200.0000 0.245 57.7 6.097 -57.5 1300.0000 0.263 53.7 6.174 1400.0000 0.286 48.6 6.275 1500.0000 0.308 44.3 6.371 1600.0000 0.328 40.7 6.419 1700.0000 0.344 36.2 6.470 1800.0000 0.364 31.0 6.555 1900.0000 0.382 26.0 2000.0000 0.395 2100.0000 0.405 2200.0000 0.417 2300.0000 0.427 2400.0000 0.431 2500.0000 0.431 2600.0000 0.434 2700.0000 K MAG. ANG. 0.051 0.9 1.34 0.048 1.4 1.36 0.049 5.9 1.38 UE MHz S21 S11 D FREQUENCY -0.5 0.054 8.9 0.072 -1.1 0.054 8.8 1.39 0.071 -0.6 0.056 10.4 1.40 0.070 0.1 0.060 11.5 1.40 0.071 0.5 0.065 11.6 1.37 0.073 2.3 0.072 11.1 1.34 0.070 1.0 0.074 8.2 1.36 0.069 3.3 0.075 9.4 1.34 0.070 4.4 0.082 5.6 1.31 -63.0 0.067 2.5 0.085 0.6 1.33 -68.4 0.069 5.0 0.091 -4.6 1.28 -74.3 0.070 5.4 0.092 -8.2 1.24 -79.8 0.066 7.1 0.097 -12.6 1.26 -85.9 0.067 5.6 0.096 -19.6 1.23 -92.1 0.069 8.2 0.100 -23.9 1.18 6.542 -98.3 0.070 8.4 0.100 -32.0 1.15 21.2 6.570 -104.7 0.070 8.7 0.101 -38.9 1.13 16.8 6.528 -111.3 0.070 10.1 0.100 -47.2 1.12 11.8 6.527 -118.5 0.071 9.4 0.096 -57.2 1.09 6.6 6.438 -124.7 0.072 9.5 0.098 -66.1 1.09 2.2 6.336 -131.3 0.071 10.7 0.095 -76.5 1.09 -3.0 6.247 -138.1 0.072 12.8 0.098 -86.1 1.09 -8.2 6.127 -145.0 0.071 15.4 0.094 -99.9 1.10 0.423 -12.3 5.952 -151.7 0.071 14.5 0.088 -116.7 1.14 2800.0000 0.419 -17.1 5.816 -158.2 0.070 16.1 0.081 -134.4 1.18 2900.0000 0.408 -21.5 5.619 -165.0 0.073 15.3 0.074 -149.7 1.19 3000.0000 0.400 -26.2 5.354 -171.5 0.074 17.1 0.065 -170.3 1.24 3100.0000 0.386 -29.3 5.134 -177.4 0.075 17.1 0.053 172.8 1.28 1.36 DI SC O NT IN 0.074 Data Sheet P13442EJ3V0DS00 11 PC2708TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.10.1 UE D 0.2+0.1 -0.05 0.65 0.65 1.3 2.00.2 1.250.1 12 Data Sheet P13442EJ3V0DS00 0.15+0.1 -0.05 IN DI SC O NT 0 to 0.1 0.7 0.90.1 0.1 MIN. PC2708TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) The bypass capacitor should be attached to VCC line. D All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. RECOMMENDED SOLDERING CONDITIONS UE (5) The DC cut capacitor must be attached to input and output pin. This product should be soldered under the following recommended conditions. Soldering Method Soldering Conditions Recommended Condition Symbol Package peak temperature: 235C or below Time: 30 seconds or less (at 210C) Note Count: 3, Exposure limit: None VPS Package peak temperature: 215C or below Time: 40 seconds or less (at 200C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300C Time: 3 seconds or less (per side of device) Note Exposure limit: None - IR35-00-3 NT IN Infrared Reflow SC O Note After opening the dry pack, keep it in a place below 25C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document DI SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P13442EJ3V0DS00 13 NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. 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