BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
µµ
µ
PC2708TB
5 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DATA SHEET
The mark shows major revised poi nts.
Document No. P13442EJ3V0DS00 (3rd edition)
Date Published November 2000 N CP(K)
DESCRIPTION
The
µ
PC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is
packaged in super minimold package which is smaller than conventional minimold.
The
µ
PC2708TB has compatible pin connections and performance to
µ
PC2708T of conventional minimold
version. So, in the case of reducing your system size,
µ
PC2708TB is suitable to replace from
µ
PC2708T.
This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Wideband response : fu = 2.9 GHz TYP. @ 3 dB bandwidth
• Medium output power : PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor
• Supply voltage : VCC = 4.5 to 5.5 V
• Power gain : GP = 15 dB TYP. @ f = 1 GHz
• Port impedance : input/output 50 Ω
APPLICATIONS
• 1st IF amplifiers in BS/CS converters, etc.
• 1st IF stage buffer in BS/CS tuners, etc.
ORDERING INFORMATION
Part Number Package Marking Supplyi ng Form
µ
PC2708TB-E3 6-pin super mini m ol d C1D Embossed tape 8 mm wide.
1, 2, 3 pins face the perf oration side of t he tape.
Qty 3 kpcs/reel.
Remark To order evaluation samples, please contact your nearby sales office (Part number for sample order:
µ
PC2708TB-A).
Caution Electro-static sensitive devices
DISCONTINUED
Data Sheet P13442EJ3V0DS00
2
µ
µµ
µ
PC2708TB
PIN CONNECTIONS
Pin No. Pin Name
1 INPUT
2GND
3GND
4OUTPUT
5GND
C1D
3
2
1
4
5
6
(Top View) (Bottom View)
4
5
6
3
2
1
6V
CC
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω
ΩΩ
Ω)
Part No. fu
(GHz) PO(sat)
(dBm) GP
(dB) NF
(dB) ICC
(mA) Package Marking
µ
PC2708T 6-pin mini m ol d
µ
PC2708TB 2.9 +10.0 15 6.5
@f = 1 GHz 26 6-pin super mini m ol d C1D
µ
PC2709T 6-pin mini m ol d
µ
PC2709TB 2.3 +11.5 23 5
@f = 1 GHz 25 6-pin super mini m ol d C1E
µ
PC2710T 6-pin mini m ol d
µ
PC2710TB 1.0 +13.5 33 3.5
@f = 0.5 GHz 22 6-pin super mi ni m ol d C1F
µ
PC2776T 6-pin mini m ol d
µ
PC2776TB 2.7 +8.5 23 6.0
@f = 1 GHz 25 6-pin super mini m ol d C2L
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Caution The package size distinguishes between minimold and super minimold.
DISCONTINUED
Data Sheet P13442EJ3V0DS00 3
µ
µµ
µ
PC2708TB
SYSTEM APPLICATION EXAMPLE
EXAMPLE OF DBS CONVERTERS
BS Antenna
(DBS ODU) IF Amp.RF Amp. Mixer
Oscillator
PC2708TB
µ
PC2711TB
PC2712TB
µ
µ
To IDU
Parabola
Antenna
EXAMPLE OF 2.4 GHz BAND RECIEVER
PC2708TB
µ
DEMOD.
PLL
PA
SW
I
Q
Driver 0°
90°
Q
I
RX
TX
PLL
φ
DISCONTINUED
Data Sheet P13442EJ3V0DS00
4
µ
µµ
µ
PC2708TB
PIN EXPLANATION
Pin
No. Pin Name Applied
Voltage (V )
Pin
Voltage
(V)Note Functi on and Applicat i ons Internal E qui valent Circ ui t
1 INPUT – 1.16 Signal input pi n. A internal
matchi ng circuit , configured wi t h
resistors, enables 50 Ω
connect i on ov er a wi de band.
A mult i -f eedback circuit is
designed to cancel the
deviati ons of hFE and resis tance.
This pin must be coupled to
signal s ource with capacitor for
DC cut.
4 OUTPUT Voltage
as same
as VCC
through
external
inductor
– Signal output pin. The induc tor
must be attached between VCC
and output pins to supply
current to the internal out put
transistors.
6V
CC 4.5 to 5.5 – Power supply pi n, which bias es
the internal i nput transistor.
This pin s houl d be externally
equipped with by pass capac i t or
to minim i ze its i m pedance.
2
3
5
GND 0 – Ground pin. This pi n should be
connect ed t o system ground
with mini m um i nductance.
Ground pattern on the board
should be form ed as wide as
possible.
All the ground pi ns must be
connect ed t ogether with wide
ground pattern to decrease
impedance difference.
6
4
1
IN
V
CC
OUT
GNDGND 23 5
Note Pin voltage is measured at VCC = 5.0 V
DISCONTINUED
Data Sheet P13442EJ3V0DS00 5
µ
µµ
µ
PC2708TB
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Conditions Ratings Unit
Supply V ol tage VCC TA = +25°C, Pi n 4 and 6 6 V
Total Circ ui t Current ICC TA = +25°C60mA
Power Dissipation PDMounted on doubl esided copper cl ad
50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) 270 mW
Operating Am bi ent Tem perature TA−40 to +85 °C
Storage Temperat ure Tstg −55 to +150 °C
Input Power Pin TA = +25°C +10 dBm
RECOMMENDED OPERATING RANGE
Parameter Symbol MIN. TYP. MAX. Unit Remark
Supply V ol tage VCC 4.5 5.0 5.5 V The same vol tage should be applied
to pin 4 and 6.
Operating Am bi ent Tem perature TA−40 +25 +85 °C
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω
ΩΩ
Ω)
Parameter S ymbol Test Condit i ons MIN. TYP. MAX. Unit
Circuit Current ICC No input S i gnal 20 26 33 mA
Power Gain GPf = 1 GHz 13.0 15.0 18.5 dB
Saturated Output Power PO(sat) f = 1 GHz , P in = 0 dB m +7.5 +10.0 – dBm
Noise Figure NF f = 1 GHz – 6.5 8.0 dB
Upper Limit Operating Frequency fu3 dB down below flat gain at
f = 0.1 GHz 2.7 2.9 – GHz
Isolat i on ISL f = 1 GHz 18 23 – dB
Input Return Loss RLin f = 1 GHz 8 11 – dB
Output Return Loss RLout f = 1 GHz 16 20 – dB
Gain Flatness ∆GPf = 0.1 to 2.6 GHz – ±0.8 – dB
DISCONTINUED
Data Sheet P13442EJ3V0DS00
6
µ
µµ
µ
PC2708TB
TEST CIRCUIT
V
CC
1 000 pF
1 000 pF 1 000 pF
C
1
C
2
L
4
6
1
2, 3, 5
50 Ω50 ΩOUTIN
C
3
COMPONENTS OF TEST CIRCUIT
FOR MEASURING ELECTRICAL
CHARACTERISTICS EXAMPLE OF ACTURAL APPLICATION COMPONENTS
Type Value Type V al ue Operating Frequency
C1, C2Bias Tee 1 000 pF C1 to C3Chip Capacitor 1 000 pF 100 MHz or higher
C3Capacitor 1 000 pF 300 nH 10 MHz or higher
L Bias Tee 1 000 nH 100 nH 100 MHz or higher
L Chip Induct or
10 nH 1.0 GHz or higher
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
DISCONTINUED
Data Sheet P13442EJ3V0DS00 7
µ
µµ
µ
PC2708TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
IN OUT
CV
CC
C1D
321
456
AMP-2
CC
Top View
Mounting Direction
Notes
1.
2.
3.
4.
30 × 30 × 0.4 mm double sided copper clad polyimide board.
Back side: GND pattern
Solder plated on pattern
: Through holes
L
For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF
SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E).
COMPONENT LIST
Value
C 1 000 pF
L 300 nH
DISCONTINUED
Data Sheet P13442EJ3V0DS00
8
µ
µµ
µ
PC2708TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°
°°
°C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
NOISE FIGURE, POWER GAIN
vs. FREQUENCY POWER GAIN vs. FREQUENCY
Circuit Current ICC (mA)
Circuit Current ICC (mA)
Power Gain GP (dB)
Input Return Loss RLin (dB)
Output Return Loss RLout (dB)
Power Gain GP (dB)
Supply Voltage VCC (V) Operating Ambient Temperature TA (°C)
Frequency f (GHz)
ISOLATION vs. FREQUENCY
INPUT RETURN LOSS, OUTPUT RETURN LOSS
vs. FREQUENCY
Isolation ISL (dB)
Frequency f (GHz) Frequency f (GHz)
Frequency f (GHz)
8
7
6
5
Noise Figure NF (dB)
9
0
–20
–30
–40
0.1 0.3 1.0
–50
VCC = 5.0 V
–10
3.0
40
30
20
10
00–60 +20 +100
35
25
15
5
–40 –20 +40 +60 +80
No input signal
VCC = 5.0 V
40
30
20
10
35
25
15
5
0
0123456
No input signal
0
–10
–20
1.00.3 3.0
–40
0.1
VCC = 5.0 V
–30
RLin
RLout
20
15
10
0.3 1.0 3.0
5
0.1
GP
VCC = 5.5 V
NF
VCC = 4.5 V
VCC = 5.0 V
VCC = 5.0 V
VCC = 4.5 V
VCC = 5.5 V
0.3 1.0 3.00.1
20
15
10
VCC = 5.0 V
TA = +85°C
TA = –40°C
TA = +25°CTA = +85°C
TA = +25°C
TA = –40°C
DISCONTINUED
Data Sheet P13442EJ3V0DS00 9
µ
µµ
µ
PC2708TB
OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER
Output Power P
out
(dBm)
Output Power P
out
(dBm)
Output Power P
out
(dBm)
Output Power P
out
(dBm)
Input Power P
in
(dBm) Input Power P
in
(dBm)
Input Power P
in
(dBm)
SATURATED OUTPUT POWER vs. FREQUENCY
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
Saturated Output Power P
O (sat)
(dBm)
3rd Order Intermodulation Distotion IM
3
(dBc)
Frequency f (GHz) Output Power of Each Tone P
O (each)
(dBm)
Input Power P
in
(dBm)
+15
+10
+5
0.3 1.0 –10 –8 –6 –4 –2 0 +2 +4 +6 +8 +103.0
0
0.1
V
CC
= 5.0 V
V
CC
= 5.5 V P
in
= 0 dBm
V
CC
= 4.5 V
+15
+10
0
–5
–30 0 +5
–15
–15 –10 –5
+5
–10
–20 –20–25 –30 0 +5–15 –10 –5–20–25
V
CC
= 5.5 V
V
CC
= 4.5 V
f = 2.0 GHz
V
CC
= 5.0 V
+15
+10
0
–5
–15
+5
–10
–20
f = 1.0 GHz
V
CC
= 5.0 V
f = 2.9 GHz
f = 2.0 GHz
60
50
40
30
20
10
f
1
= 1 .000 GHz
f
2
= 1 .002 GHz
V
CC
= 5.0 V
V
CC
= 5.5 V
V
CC
= 4.5 V
+15
+10
0
–5
–30 0 +5
–15
–15 –10 –5
+5
–10
–20 –20–25
f = 1.0 GHz
V
CC
= 4.5 V
V
CC
= 5.5 V
V
CC
= 5.0 V
+15
+10
0
–5
–30 0 +5
–15
–15 –10 –5
+5
–10
–20 –20–25
T
A
= –40°C
T
A
= +25°C
f = 1.0 GHz
V
CC
= 5.0 V T
A
= +85°C
Remark The graphs indicate nominal characteristics.
DISCONTINUED
Data Sheet P13442EJ3V0DS00
10
µ
µµ
µ
PC2708TB
S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V)
S11-FREQUENCY
0.1 GHz
1.0 GHz 2.0 GHz
3.0 GHz
S22-FREQUENCY
3.0 GHz 0.1 GHz
2.0 GHz
DISCONTINUED
Data Sheet P13442EJ3V0DS00 11
µ
µµ
µ
PC2708TB
TYPICAL S-PARAMETER VALUES (TA = +25°C)
VCC = Vout = 5.0 V, ICC = 27 mA
FREQUENCY S11 S21 S12 S22 K
MHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
100.0000 0.039 138.9 5.815 –4.8 0.077 –0.8 0.051 0.9 1.34
200.0000 0.053 119.7 5.822 –9.8 0.075 –1.5 0.048 1.4 1.36
300.0000 0.069 106.7 5.815 –14.3 0.074 –0.6 0.049 5.9 1.38
400.0000 0.088 97.2 5.813 –18.8 0.074 –0.5 0.054 8.9 1.36
500.0000 0.105 91.6 5.794 –23.8 0.072 –1.1 0.054 8.8 1.39
600.0000 0.123 84.9 5.823 –28.4 0.071 –0.6 0.056 10.4 1.40
700.0000 0.144 79.7 5.871 –33.0 0.070 0.1 0.060 11.5 1.40
800.0000 0.164 74.7 5.890 –38.2 0.071 0.5 0.065 11.6 1.37
900.0000 0.186 70.7 5.938 –42.8 0.073 2.3 0.072 11.1 1.34
1000.0000 0.205 66.1 5.960 –47.6 0.070 1.0 0.074 8.2 1.36
1100.0000 0.226 61.7 6.072 –52.7 0.069 3.3 0.075 9.4 1.34
1200.0000 0.245 57.7 6.097 –57.5 0.070 4.4 0.082 5.6 1.31
1300.0000 0.263 53.7 6.174 –63.0 0.067 2.5 0.085 0.6 1.33
1400.0000 0.286 48.6 6.275 –68.4 0.069 5.0 0.091 –4.6 1.28
1500.0000 0.308 44.3 6.371 –74.3 0.070 5.4 0.092 –8.2 1.24
1600.0000 0.328 40.7 6.419 –79.8 0.066 7.1 0.097 –12.6 1.26
1700.0000 0.344 36.2 6.470 –85.9 0.067 5.6 0.096 –19.6 1.23
1800.0000 0.364 31.0 6.555 –92.1 0.069 8.2 0.100 –23.9 1.18
1900.0000 0.382 26.0 6.542 –98.3 0.070 8.4 0.100 –32.0 1.15
2000.0000 0.395 21.2 6.570 –104.7 0.070 8.7 0.101 –38.9 1.13
2100.0000 0.405 16.8 6.528 –111.3 0.070 10.1 0.100 –47.2 1.12
2200.0000 0.417 11.8 6.527 –118.5 0.071 9.4 0.096 –57.2 1.09
2300.0000 0.427 6.6 6.438 –124.7 0.072 9.5 0.098 –66.1 1.09
2400.0000 0.431 2.2 6.336 –131.3 0.071 10.7 0.095 –76.5 1.09
2500.0000 0.431 –3.0 6.247 –138.1 0.072 12.8 0.098 –86.1 1.09
2600.0000 0.434 –8.2 6.127 –145.0 0.071 15.4 0.094 –99.9 1.10
2700.0000 0.423 –12.3 5.952 –151.7 0.071 14.5 0.088 –116.7 1.14
2800.0000 0.419 –17.1 5.816 –158.2 0.070 16.1 0.081 –134.4 1.18
2900.0000 0.408 –21.5 5.619 –165.0 0.073 15.3 0.074 –149.7 1.19
3000.0000 0.400 –26.2 5.354 –171.5 0.074 17.1 0.065 –170.3 1.24
3100.0000 0.386 –29.3 5.134 –177.4 0.075 17.1 0.053 172.8 1.28
DISCONTINUED
Data Sheet P13442EJ3V0DS00
12
µ
µµ
µ
PC2708TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.7
0 to 0.1
0.15
+0.1
–0.05
2.0±0.2
1.3
0.650.65
0.2
+0.1
–0.05
2.1±0.1
1.25±0.1
0.1 MIN.
DISCONTINUED
Data Sheet P13442EJ3V0DS00 13
µ
µµ
µ
PC2708TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
Soldering Method Soldering Condit i ons Recommended Condition Sym bol
Infrared Refl ow Package peak t em perature: 235°C or below
Time: 30 s econds or less (at 210°C)
Count: 3, Exposure li m i t: NoneNote
IR35-00-3
VPS Package peak t emperature: 215°C or below
Time: 40 s econds or less (at 200°C)
Count: 3, Exposure li m i t: NoneNote
VP15-00-3
Wave Solderi ng Sol deri ng bath temperature: 260°C or bel ow
Time: 10 seconds or less
Count: 1, Exposure li m i t: NoneNote
WS60-00-1
Partial Heating Pin t em perature: 300°C
Time: 3 s econds or less (per side of device)
Exposure l i mit: NoneNote
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
DISCONTINUED
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property
rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
Electronics or others.
4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern
Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modication, copy
or otherwise misappropriation of Renesas Electronics product.
5. Renesas Electronics products are classied according to the following two quality grades: “Standard” and “High Quality”. The recommended applications
for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; ofce equipment; communications
equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and
industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); trafc control systems; anti-disaster systems; anti-crime
systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct
threat to human life or bodily injury (articial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear
reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas
Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product
for which the product is not intended by California Eastern Laboratories or Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specied by California Eastern Laboratories, especially with
respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
beyond such specied ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specic characteristics such as
the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
re in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy,
re control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of
microcomputer software alone is very difcult, please evaluate the safety of the nal products or systems manufactured by you.
8. Please contact a California Eastern Laboratories sales ofce for details as to environmental matters such as the environmental compatibility of each Renesas
Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of
controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for
damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document
for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When
exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics
product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and
Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales ofce if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
CEL Headquarters • 4590 Patrick Henry Drive, Santa Clara, CA 95054 • Phone (408) 919-2500 • www.cel.com
For a complete list of sales ofces, representatives and distributors,
Please visit our website: www.cel.com/contactus
DISCONTINUED
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
CEL:
UPC2708TB-A NE6500379A-EVPW26 UPC2708TB-EVAL