VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage Surface Mount Phase Control SCR, 10 A FEATURES 2 Anode * Meets MSL level 1, per LF maximum peak of 260 C * Designed and JEDEC-JESD47 D2PAK 1 Cathode qualified J-STD-020, according * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 Gate APPLICATIONS PRODUCT SUMMARY * Input rectification (soft start) Package TO-263AB (D2PAK) Diode variation Single SCR IT(AV) 6.5 A VDRM/VRRM 800 V VTM < 1.15 V IGT 15 mA TJ - 40 to 125 C * Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-10TTS08SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 m) copper 2.5 3.5 Aluminum IMS, RthCA = 15 C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 C/W 14.0 18.5 UNITS A Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 6.5 A IRMS 10 VRRM/VDRM 800 V ITSM 110 A 1.15 V dV/dt 150 V/s dI/dt 100 A/s - 40 to 125 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 C mA 800 800 1.0 6.5 A, TJ = 25 C VT Range TJ VOLTAGE RATINGS PART NUMBER VS-10TTS08SPbF Revision: 19-Jun-13 Document Number: 94562 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS TC = 112 C, 180 conduction half sine wave VALUES UNITS 6.5 10 10 ms sine pulse, rated VRRM applied, TJ = 125 C 95 10 ms sine pulse, no voltage reapplied, TJ = 125 C 110 10 ms sine pulse, rated VRRM applied, TJ = 125 C 45 10 ms sine pulse, no voltage reapplied, TJ = 125 C 64 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 C 640 A2s Maximum on-state voltage drop VTM 6.5 A, TJ = 25 C 1.15 V 17.3 m 0.85 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current rt VT(TO) IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TJ = 125 C TJ = 25 C TJ = 125 C VR = Rated VRRM/VDRM A2s 0.05 1.0 Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 C 30 Anode supply = 6 V, resistive load, TJ = 25 C 50 TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open mA V/s 100 A/s VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current +IGM 1.5 A Maximum peak negative gate voltage -VGM 10 V Anode supply = 6 V, resistive load, TJ = - 65 C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 20 Anode supply = 6 V, resistive load, TJ = 25 C 15 Anode supply = 6 V, resistive load, TJ = 125 C 10 Anode supply = 6 V, resistive load, TJ = - 65 C 1.2 Anode supply = 6 V, resistive load, TJ = 25 C 1 Anode supply = 6 V, resistive load, TJ = 125 C 0.7 TJ = 125 C, VDRM = Rated value W mA V 0.2 0.1 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 19-Jun-13 TEST CONDITIONS TJ = 25 C TJ = 125 C 0.8 3 s 100 Document Number: 94562 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS Maximum thermal resistance, junction to case RthJC UNITS - 40 to 125 For 10 s (1.6 mm from case) 260 DC operation 1.5 C C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 40 2 Approximate weight g 0.07 Case style D2PAK (SMD-220) Marking device oz. 10TTS08S 125 10TTS08 R thJC (DC) = 1.5 K/W 120 Conduction Angle 115 30 60 90 110 120 180 105 0 1 2 3 4 5 6 7 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note #AN-994 8 180 120 90 60 30 7 6 5 RMS Limit 4 3 Conduction Angle 2 10TTS08 TJ = 125C 1 0 0 10TTS08 R thJC (DC) = 1.5 K/W 120 Conduction Period 115 30 60 110 90 120 180 DC 105 0 2 4 6 8 10 12 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Revision: 19-Jun-13 2 3 4 5 6 7 Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Fig. 1 - Current Rating Characteristics 125 1 Average On-state Current (A) Average On-state Current (A) 12 DC 180 120 90 60 30 10 8 6 RMS Limit 4 Conduction Period 10TTS08 TJ = 125C 2 0 0 2 4 6 8 10 12 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Document Number: 94562 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors 110 120 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 90 110 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 100 80 70 60 50 VS-10TTS08 100 90 80 70 60 50 40 1 10 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied VS-10TTS08 40 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 10 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 10TTS08 100 TJ = 25C 10 TJ = 125C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (C/W) 10 Steady State Value (DC Operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 10TTS08 0.01 0.0001 0.001 0. 01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 19-Jun-13 Document Number: 94562 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 T T S 08 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating, RMS value 3 - Circuit configuration: TRL PbF 8 9 T = Single thyristor 4 - Package: 5 - Type of silicon: T = TO-220AC S = Converter grade 6 - Voltage code x 100 = VRRM 7 - S = TO-220 D2PAK (SMD-220) version 8 - Tape and reel option: TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10TTS08SPbF 50 1000 Antistatic plastic tubes VS-10TTS08STRRPbF 800 800 13" diameter reel VS-10TTS08STRLPbF 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Revision: 19-Jun-13 Document Number: 94562 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-10TTS08STRLPBF 10TTS08STRL 10TTS08STRR VS-10TTS08SPBF