FT4016.P INSULATED HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 40 Amp 50 mA (16) INSULATED TO3P Off-State Voltage 600 V / 800 V 1 * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT....P T1 (1) 2 3 G _ (3) T2 (2) This series of TRIACs uses a high performance PNPN technology. These parts are intended for general purpose AC switching applications with highly inductive loads. The FT....P series provides an isolated tab (rated at 2500 Vrms). Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) RMS On-state Current (full sine wave) All Conduction Angle, Tc = 80 C 40 A ITSM Non-repetitive On-State Current Full Cycle, 60 Hz (t = 16.7 ms) 420 A ITSM Non-repetitive On-State Current Full Cycle, 50 Hz (t = 20 ms) 400 A It Fusing Current tp = 10 ms, Half Cycle 1000 A2s IGM Peak Gate Current 20 s max. 8 A PG(AV) Average Gate Power Dissipation Tj = 125 C 1 W dI/dt Critical rate of rise of on-state current IG = 2x IGT, tr 100ns 50 A/s 2 Tj = 125 C f = 120 Hz, Tj = 125 C Tj Operating Temperature (-40 +125) C Tstg Tsld Storage Temperature (-40 +150) C 260 C SYMBOL VDRM/VRRM Soldering Temperature PARAMETER Repetitive Peak Off State Voltage 10s max VOLTAGE M 600 Unit N 800 V May - 10 FT4016.P INSULATED HIGH COMMUTATION TRIAC Electrical Characteristics SYMBOL PARAMETER Quadrant CONDITIONS SENSITIVITY Unit 16 Gate Trigger Current VD = 12 VDC, RL = 33, Tj = 25 C Q1/Q3 MAX 50 mA VGT Gate Trigger Voltage VD = 12 VDC, RL = 33, Tj = 25 C Q1/Q3 MAX 1.3 V VGD Gate Non Trigger Voltage VD = VDRM, RL = 3.3 K, Tj = 125 C Q1/Q3 MIN 0.2 V Holding Current IT =100 mA,Gate open, Tj = 25 C MAX 80 mA Latching Current IG = 1.2 IGT, Tj = 25 C Q1, Q3 MAX 80 mA MAX 160 mA MIN 500 V/s IGT IH (1) (2) IL Q2 dV/dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM, Gate open Tj = 125 C VTM (2) Vt (o) (2) rd (2) On-state Voltage ITM = 60 Amp, tp = 380 s,Tj = 25 C MAX 1.55 V Threshold Voltage Tj = 125 C MAX 0.85 V Dynamic resistance Tj = 125 C MAX 10 m IDRM/IRRM Off-State Leakage Current Rth(j-c) Thermal Resistance VD = VDRM, Tj = 125 C MAX 5 mA VR = VRRM, Tj = 25 C MAX 20 A 0.9 C/W for AC 360 conduction angle Junction-Case (1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F T 40 16 M P 00 TU FAGOR TRIAC CURRENT PACKAGING FORMING CASE VOLTAGE SENSITIVITY May - 10 FT4016.P INSULATED HIGH COMMUTATION TRIAC Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). P (W) 50 45 IT(RMS)(A) 40 a =180 40 35 30 30 25 20 20 15 10 10 5 IT(RMS)(A) 0 0 5 Tc(C) 0 10 15 20 25 30 35 40 0 50 75 ITM (A) 450 t=20ms One cycle 350 Tj max 125 I TSM(A) 400 100 100 Fig. 4: Surge peak on-state current versus number of cycles Fig. 3: On-state characteristics (maximum values) 400 25 300 Non repetitive Tj initial = 25 C 250 200 Tj = 25 C 10 Repetitive Tc = 70 C 150 100 50 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTM (V) Fig. 5: Non repetitive surge peak on-state current for a sinusoidal pulse with width: 2 tp < 10 ms, and corresponding value of I t. 2 10 1 100 1000 Fig. 7: Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values) 2 IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25C] ITSM(A). I t (A s) 3000 Number of cycles 0 Tj initial = 25 C 2.5 2 It 2.0 1000 IGT 1.5 ITSM 1.0 IH&IL 0.5 100 0.01 0.10 1.00 tp(ms) 10.00 0 -40 -20 0 20 40 60 80 100 120 140 Tj(C) May - 10 FT4016.P INSULATED HIGH COMMUTATION TRIAC PACKAGE MECHANICAL DATA: INSULATED TO3P A H N B L K G F C M J D E J DIMENSIONS (mm) A MAX B C D 4.6 1.55 15.6 0.7 E F G H J K L M 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 TYP MIN N 4.60 4.4 1.45 14.35 0.5 Mounting Torque 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 1 N.m (*) Limiting values and life support applications, see Web page. May - 10