42
VTB Proc ess Photodiodes VTB8440B, 8441B
PRODUCT DESCRIPTION
Planar silicon photodiode in recessed ceramic
package. The package incor porates an infrare d
rejection filter. These diodes have very high
sh unt res is tan ce and ha ve g ood blue re spon se.
PACKAGE DIMENSIONS inch (mm)
CASE 21F 8 m m CERAM IC
CHIP ACTIVE AREA: .008 in
2
(5.16 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Ope rati ng Temp erature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTI C TEST CONDIT IONS VTB8440B VTB8441B UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 4 5 4 5 µA
TC ISC ISC Temperature Coefficient 2850 K .02 .08 .02 .08 %/°C
VOC Open Circuit Voltage H = 100 2850 K 420 420 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 2000 100 pA
RSH Shunt Resistance H = 0, V = 10 mV .07 1.4 GΩ
TC RSH RSH Temperature Coeff ic ient H = 0, V = 10 mV -8.0 -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 1.0 1.0 nF
λrange Spectral Applica tion Range 330 720 330 720 nm
λpSpectral Response - Pea k 580 580 nm
VBR Breakdown Voltage 2 40 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±50 ±5 0 Degrees
NEP Noise Equi valent Power 1.1 x 10-13 (Typ.) 2.4 x 10-14 (Typ.)
D* Specific Detectivity 2.2 x 10 12 (Typ. ) 9.7 x 10 12 (Typ.)
/ W
WHz⁄
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St . Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
