ON Semiconductor JFET - General Purpose Transistor MMBF5460LT1 P-Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage VDG 40 Vdc Reverse Gate-Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C Forward Gate Current 1 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 SOURCE 3 GATE 1 DRAIN DEVICE MARKING MMBF5460LT1 = 6E ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)GSS 40 -- -- Vdc -- -- -- -- 5.0 1.0 nAdc Adc VGS(off) 0.75 -- 6.0 Vdc VGS 0.5 -- 4.0 Vdc IDSS -1.0 -- -5.0 mAdc Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 -- 4000 mhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| -- -- 75 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.0 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 1.0 2.0 pF Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) IGSS Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL-SIGNAL CHARACTERISTICS 1. FR-5 = 1.0 0.75 0.062 in. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 521 Publication Order Number: MMBF5460LT1/D MMBF5460LT1 4.0 VDS = 15 V 3.5 I D, DRAIN CURRENT (mA) FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 3.0 2.5 TA = -55C 2.0 25C 1.5 125C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.8 2.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) DRAIN CURRENT versus GATE SOURCE VOLTAGE 4000 3000 2000 1000 700 500 VDS = 15 V f = 1.0 kHz 300 200 0.2 0.3 10 I D, DRAIN CURRENT (mA) VDS = 15 V 8.0 7.0 TA = -55C 6.0 25C 125C 5.0 4.0 3.0 2.0 1.0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3.5 4.0 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 12 TA = -55C 10 8.0 25C 125C 6.0 4.0 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 10000 VDS = 15 V 14 1.0 Figure 5. VGS(off) = 4.0 Volts 7.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) 16 I D, DRAIN CURRENT (mA) 4.0 7000 Figure 2. VGS(off) = 4.0 Volts 0 3.0 10000 9.0 0 2.0 Figure 4. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE ( mhos) Figure 1. VGS(off) = 2.0 Volts 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) 8.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 Figure 6. VGS(off) = 5.0 Volts Figure 3. VGS(off) = 5.0 Volts http://onsemi.com 522 7.0 10 MMBF5460LT1 10 VDS = 15 V f = 1.0 kHz 8.0 IDSS = 3.0 mA 100 70 50 6.0 mA 10 mA 30 C, CAPACITANCE (pF) 200 7.0 6.0 Ciss 5.0 4.0 3.0 2.0 20 10 0.1 f = 1.0 MHz VGS = 0 9.0 300 Coss 1.0 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 0 10 Crss 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 Figure 7. Output Resistance versus Drain Current Figure 8. Capacitance versus Drain-Source Voltage 10 9.0 NF, NOISE FIGURE (dB) r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 VDS = 15 V VGS = 0 f = 100 Hz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 Figure 9. Noise Figure versus Source Resistance vi COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz Crss Ciss ross Coss | yfs | vi yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = -j Crss *Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 10. Equivalent Low Frequency Circuit http://onsemi.com 523 40