BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
SEPTEMBER 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
●80 W at 25°C Case Temperature
●12 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 5 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)
BDW93
BDW93A
BDW93B
BDW93C
VCBO
45
60
80
100
V
Collector-emitter voltage (IB = 0)
BDW93
BDW93A
BDW93B
BDW93C
VCEO
45
60
80
100
V
Emitter-base voltageVEBO5V
Continuous collector current IC12A
Continuous base current IB0.3A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)Ptot80W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)Ptot2W
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Operating free-air temperature rangeTA-65 to +150°C
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
2
SEPTEMBER 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature(unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = 100 mAIB = 0(see Note 3)
BDW93
BDW93A
BDW93B
BDW93C
45
60
80
100
V
ICEOCollector-emitter
cut-off current
VCB= 40 V
VCB= 60 V
VCB= 80 V
VCB= 80 V
IB=0
IB=0
IB=0
IB=0
BDW93
BDW93A
BDW93B
BDW93C
1
1
1
1
mA
ICBOCollector cut-off
current
VCB= 45 V
VCB= 60 V
VCB= 80 V
VCB= 100 V
VCB= 45 V
VCB= 60 V
VCB= 80 V
VCB= 100 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
0.1
0.1
0.1
0.1
5
5
5
5
mA
IEBOEmitter cut-off
currentVEB = 5 VIC=0 2 mA
hFEForward current
transfer ratio
VCE = 3 V
VCE = 3 V
VCE = 3 V
IC= 3 A
IC= 10 A
IC= 5 A(see Notes 3 and 4)1000
100
75020000
VCE(sat)Collector-emitter
saturation voltageIB = 20 mA
IB = 100 mAIC= 5 A
IC= 10 A(see Notes 3 and 4)2
3V
VBE(sat)Base-emitter
saturation voltageIB = 20 mA
IB = 100 mAIC= 5 A
IC= 10 A(see Notes 3 and 4)2.5
4V
VECParallel diode
forward voltageIE = 5 A
IE = 10 AIB = 0
IB = 02
4V
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance1.56°C/W
RθJAJunction to free air thermal resistance62.5°C/W
3
SEPTEMBER 1993 - REVISED MARCH 1997
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 201·0 10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS130AE
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 201·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AG
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 201·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AI
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
4
SEPTEMBER 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
025 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100 TIS130AA
5
SEPTEMBER 1993 - REVISED MARCH 1997
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
123
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
6
SEPTEMBER 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited