1N5400G - 1N5408G GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at
25
°
C ambient temperature unless otherwise specifie
.
Sin
g
le
p
hase, half wave, 60 Hz, resistive or inductive loa
d
For ca
p
acitive load, derate current b
y
20
%
SYMBOL 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps. VF1.0 V
Maximum DC Reverse Current Ta = 25 °CIR5.0 μA
at rated DC Blocking Voltage Ta = 100 °CIR(H) 50 μA
Typical Junction Capacitance (Note1) CJ50 pF
Typical Thermal Resistance (Note2) RθJA 15 °C/W
Junction Temperature Range TJ - 65 to + 175 °C
Storage Temperature Range TSTG - 65 to + 175 °C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 02 : March 31, 2005
RATING
A
A
IF(AV)
IFSM 150
3.0
0.208 (5.3 0)
0.188 (4.8 0)
DO
-
201
0.374 (9.50)
0.283 (7.20)
0.050 (1.28)
0.048 (1.22)
Dimensions in inches and
(
millim e te r s
)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( 1N5400G - 1N5408G )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG 4 . - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
Page 2 of 2 Rev. 02 : March 31, 2005
2.4
1.8
1.2
0.6
3.0
10
1.0
120
0
150
0
90
60
30
10
80
1.0
0.01
100
0.1
100 140
0
20 40 60 120
PERCENT OF RATED REVERSE
VOLTAG E, (%)
PEAK FORWARD SURGE
CURRENT, AMPERE S
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FORWARD CURRENT, AM P E RE S
REVERSE CURRENT,
MICROAMPERES
Ta = 25 °C
Ta = 100 °C
TJ= 25 °C
Ta = 25 °C
Pulse Width = 300 μs
2% Duty Cycle
0
.1
100
10
1
50
5
TJ= 25 °C
JUNCTION CAPACITANCE, (pF)
REVERSE VOLT AGE, VO LTS
124
10 20 40 100
00.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.01
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com