DIP Varistor @ OUTLINE DIMENSIONS VRYA6 bypeti, ate ct ss el - Standard soldering pad 5to2 t 3 2 y 3 | als | f+ Rosie} GALS acee| [ 1 Liz? oe @ RATINGS Absolute Maximum Ratings Item | Symbol | Conditions Ratings Unit Storage Temperature Tstg -30~125 Cc Junction Temperature Tj 125 Cc Ta-40C On alumina 1 element operation 310 Average Rectified Sine wave substrate 2 elements operation 200 Forward Current lo R-load - mArms Commercial On glass-epoxi 1 element operation 200 frequency substrate 2 elements operation 130 50Hz Sine wave 8 Arms Peak Surge a: 2 elements series Forward Current besm 10 x 200us Non-repetitive operation 65 A 10 x 1000s 30 Electrical Characteristics (Tz =25'C) 1 element 2.05~2.55 |. =1mA 2 elements series 410~5.10 1 element 2.50~3.00 Forward Voltage Ve I. =10mMA Vv 2 elements series 5.00~6.00 1 element 2.85~3.35 |. =7OMA 2 elements series 5.70~6.60 Junction Capacitance Cj f=100kKHz V,=0V OSC=50mV TY? 13 pF On alumina 1 element operation MAS OQ : substrate 2 elements operation MAS 150 Thermal resistance ja Junction to - - c/w ambien On glass-epoxi 1 element operation MAX 450 substrate 2 elements operation MAX 250 46 Shindengen TOKYO, JAPAN.M@ CHARACTERISTIC DIAGRAMS VRYAG6 Forward Voltage 1000 500|| per one element pulse 200 TYP 100|- 50 20 10 Forward Current Ir {mA] 0.5 0.2 0.1 0 1 2 3 4 5 Forward Voltage Vr (V) Power Dissipation 1.8 sine wave _ per one element Tj=125C J ~ 1.5 | Power Dissipation P (WJ 9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Average Rectified Forward Current Io (Arms) Peak Surge Forward Current sine wave ~ Dp | 4 non-repetitive 2 elements Tj=25C ot r i | ee nl : L | | | il of series operation| Hi ot Peak Surge Forward Current Irs (Arms) So : 100 Junction Capacitance vues web tf TYP ' mT ee one clenen + LLU) Tr=2s'c | Junction Capacitance Cj (pF) 20 100 1000 Frequency f (kHz) 10000 Derating Curve Ta-1, Derating Curve Ta-I, gp 350 To > 280 TT??? Tod re] 7] E J+ ++ 4 LE On alumina substrate E - \2 On glass~epoxi subutrate tot i, 4 . sine wave). | <_< 949|_- [sine wave! | _ . = 300 + ne hay = g 40 [ Reba : = free in air ib 2 = [7 Lfree in air soe = 200 2 . = 5 Lt TL --1 | substrate size 25 x 25mm 2 a be 3 160 5 a toe . zr g = soldering land imm 5 | ey 5 toe] Le gm Ne ~ of oa | tS 3 _| conductor layer | 20um | 356m 3 80 | | i = a hick 64mm| 1 i eo | | | NA | substrate thickness |0.64mm| 1.5mm | 2 4, - = a Ky % i. & g < 0 Lo i lL XV ! 9 0 0 50 100 150 =< 0 50 100 150 Ambient Temp. Ta (C) Ambient Temp. Ta ("C) | 47 Shindengen TOKYO, JAPAN.