MBR2535CT - MBR2560CT
MBR2535CT - MBR2560CT, Rev. A
MBR2535CT - MBR2560CT
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Symbol Parameter Value Units
IOAverage Recti f i ed Current
.375 " lead length @ TA = 130°C30 A
if(repetitive) Peak Repetitive Forward Current
(Rated V R , Square Wave, 20 KHz) @ TA = 130°C30 A
if(surge) Peak Forward Surge Current
8.3 m s single hal f-sine-wave
Superim posed on rated load (JEDEC method) 150 A
PDTotal Device Dissipation
Derate above 25 °C2.0
16.6 W
mW/°C
RθJA Thermal Res i stance, Junction to Ambient 60 °C/W
RθJL Thermal Res i stance, Junction to Lead 1.5 °C/W
Tstg Storage Temperature Range -65 to +175 °C
TJOperating Junction Tem perature -65 to +150 °C
Parameter Device Units
2535CT 2545CT 2550CT 2560CT
Peak Repeti tive Reverse Voltage 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)35 45 50 60 V
Voltage Rat e of Change (Rated VR)10,000 V/uS
Maximum Reverse Current
@ rated VRTA = 25°C
TA = 125°C0.2
40 1.0
50 mA
mA
Maximum Forward V ol t age
IF = 15 A, TC = 25°C
IF = 15 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
-
-
0.82
0.73
0.75
0.65
-
-
V
V
V
V
Peak Repet i tive Revers e S u rge
Current
2.0 us Pulse Wi dth, f = 1.0 KHz
1.0 0.5 A
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
TO-220AB 12 3
0.412(10.5)
MAX
0.103(2.62)
0.113(2.87)
0.14(3.56)
0.16(4.06)
0.587(14.9)
0.594(15.1)
0.53(13.46)
0.56(14.22)
0.027(0.68)
0.037(0.94)
0.095(2.41)
0.105(2.67)
0.148(3.74)
0.154(3.91)
Dimensions are in: inches (mm)
+
CASE
PIN 2
PIN 3
PIN 1
0.014(0.35)
0.025(0.64)
0.10(2.54)
0.11(2.79)
0.23(5.84)
0.27(6.86)
0.045(1.14)
0.055(1.40)
0.175(4.44)
0.185(4.70)
Discrete POWER & Signal
Technologies
MBR2535CT - MBR2560CT
MBR2535CT - MBR2560CT, Rev. A
Schotty Barrier Rectifier
(continued)
Typical Characteristics
Forw a rd Cu rrent Derati ng Curve
0 25 50 75 100 125 150 175
0
6
12
18
24
30
A M BI ENT TE MP ERATU RE ( C)
FOR WAR D CURRE NT ( A)
SINGLE PHASE
HALF WAVE
60 H Z
RESISTIVE OR
I NDUCTIVE L OA D
.375" ( 9.00mm) LOAD
LENGTHS
º
T ran sient Thermal Impedance
0.01 0.1 1 10 100
0.1
1
10
100
T. PULS E DURATI ON (sec.)
TRA NS IEN T THERMAL IMPEDANCE ( C/W )
º
Non -Repetit ive Surge Curre nt
12 51020 50100
0
25
50
75
100
125
150
NUMBER OF CYCLES A T 60Hz
PEAK FORWARD SURGE CURRENT (A)
Typical Junction Capacitance
0.1 1 10 100
100
200
500
1000
2000
5000
REVERSE VOLTAGE (V)
JUNCT ION CAPACI TAN C E (pF)
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
Forward Charac t eristi cs
0 0.2 0.4 0.6 0.8 1 1.2
0.01
0.1
1
10
50
FORWARD VOLTAGE (V)
FOR WAR D CURRE NT ( A)
Pulse Widt h = 300µS
2% Duty Cycle
T = 2 5 C
º
A
T = 150 C
º
A
MBR2 535CT-MBR2545CT
MBR2 550CT-MBR2560CT
Reverse Charact eri stics
0 20406080100120140
0.001
0.01
0.1
1
10
50
PER CE NT OF R ATED PEA K RE VER SE VO LTAG E (%)
REVE RSE CU RRENT (mA)
T = 2 5 C
º
A
T = 7 5 C
º
A
T = 125 C
º
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2550CT-MBR2560CT
MBR2535CT-MBR2545CT
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