MB 7110826 0085851 350 Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM (512 x 4) FEATURES Address access time: 60ns max Input loading: -150pA max On-chip address decoding One chip enable input Qutput options: 828130: Open collector 825131: 3-State No separate fusing pins Unprogrammed outputs are Low level Fully TTL compatible APPLICATIONS Prototyping/volume production Sequential controllers Microprogramming Hardwired algorithms Control store Random logic Code conversion ABSOLUTE MAXIMUM RATINGS DESCRIPTION Product specification eee eee errr r rere reer errr eee reer 82S130 82S$131 The 828130 and the 82S131 are field-programmabie, which means that custom pattems are immediately available by following the Philips Generic | fusing procedure. The standard 82130 and 828131 are supplied with all outputs at a logical Low. Outputs are programmed to a logic High level at any specified address by fusing the Ni-Cr link matrix. These devices include on-chip decoding and 1 chip enable input for ease of memory expansion. They feature either Open collector or 3-State outputs for optimization of word expansion in bused organizations. ORDERING INFORMATION DESCRIPTION ORDER CODE | jfaGnaron sear [BRB [ comne 16-pin Ceramic Flat Pack erat ny GDFP2-F16 * MIL-STD 1835 or Appendix A of 1995 Military Data Handbook SYMBOL PARAMETER RATING +7 Input voltage +6.5 Output voltage High (828130) 45.5 Output voltage Off-State +5.5 Operating temperature -55 to +125 -65 to +150 PIN CONFIGURATION BLOCK DIAGRAM Ag Oo 7 appRess | 1:32 | LINES | DECODER | | 32x64 tg ol | pe Ag o Ay OO Sait 4:16 1:16 1:16 Ag O| Mux | mux | Mux | MUX - | {| ce of 4 OUTPUT DRIVERS O4 02 03 O4 OUTPUT LINES November 10, 1987 1065 853-0256 F00355Philips Semiconductors Military Bipolar Memory Products Product specification " 825130 825131 2K-bit TTL bipolar PROM (512 x 4) DC ELECTRICAL CHARACTERISTICS -55C < Ta < +125C, 4.5V < Voc <5.5V SYMBOL PARAMETER TEST CONDITIONS? 2 LIMITS UNIT Min | Typ | Max Input voltage Vir Low 0.8 v Vin High 2.0 v Vix Clamp Vec = 4.5V, || = -18MA 1.2 Vv Output voltage CE =Low Vot Low lo = 16MA 0.5 Vv Vou High (828131) Voc = 4.5V, Io = -2mA 2.4 Vv Input current Veco = 5.5V he Low V, = 0.45V -150 pA hi High Vv, =5.5V 40 pA Output current! Voc = 5.5V lok Leakage (825130) TE = High, Vo = 5.5V 40 pA loz Hi-Z state (82S131) GE = High, Vo = 5.5V 40 pA TE = High, Vo = 0.5V -40 BA los Short circuit (828131)9 Voc = 5.5V, CE = Low, Vo = OV, High stored 15 -85 mA Supply current loc | CE = High, Voc = 5.5V | | | 130 | mA Capacitance CE = High, Voc = 5.0V Cw Input V| = 2.0 5 10 pF Cout Output Vo = 2.0V 8 13 pF AC ELECTRICAL CHARACTERISTICS -55C < Ta < +125C, 4.5V < Voc < 5.5V SYMBOL PARAMETER TO FROM LIMITS UNIT Min Typ? Max taa Access time* Output Address 60 ns toe Access time* Output Chip Enable 30 ns too Disable time Output Chip Disable 30 ns NOTES: . Positive current is defined as into the terminal referenced. . All voltages with respect to network ground. . Duration of short circuit should not exceed 1 second. Tested at an address cycle time of Ips. | . Typical values are at Voc = SV, Ta = +25 C. . Guaranteed, but not tested. Anson 7110826 0085852 22? November 10, 1987 1066Philips Semiconductors Military Bipolar Memory Products Product specification . . 825130 2K-bit TTL bipolar PROM (512 x 4) 825131 TEST LOAD CIRCUITS VOLTAGE WAVEFORMS L tw aw} vec Vm oav ov O-m1 Ay true > be Om Ay 5.0V Om] Ap tTLH(tr) 'THL(tt) K- omy As Fy 27V 2.7V Sov ol Ag %F-9 POSITIVE 02/0 PULSE Yu Yu O-m] Ag DUT 03}o 0.3 0.3 ow om Ag O4}o INCLUDES SCOPE i w ] Re CL AND JIG O->} a7 CAPACITANCE oa o> Ag [ Input Pulse Definitions O-} CE =z GND tt INPUT PULSE CHARACTERISTICS Vu Rep. Rate | Pulse Width tty tH 1.5V MHz 500ns <5ns sSns NOTE: Ry = 2702, Rg = 6000, C= 50pF TIMING DIAGRAMS 3.0V ADDRESS OK Vu ov YOu Ya Vou - aA Vu =15V 3.0v ADDRESS ov 3.0V ov You HiZ VoL Vou You Vm = 1.5 MB 71108eb 0085853 1b3 November 10, 1987 1067