2SK1404 Silicon N Channel MOS FET REJ03G0944-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.3.00 May 15, 2006 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1404 Absolute Maximum Ratings (Ta = 25C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Ratings 600 30 5 20 5 35 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 600 30 Typ -- -- Max -- -- Unit V V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) -- -- 2.0 -- -- -- -- 1.1 10 250 3.0 1.5 A A V VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VGS = 10 V *3 3.0 -- -- -- -- -- -- -- -- -- 5.0 1000 250 45 12 45 105 55 0.9 500 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns ID = 2.5 A, VDS = 10 V *3 Body to drain diode reverse recovery time Note: 3. Pulse test Rev.3.00 May 15, 2006 page 2 of 6 |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr VDS = 10 V, VGS = 0, f = 1 MHz ID = 2.5 A, VGS = 10 V, RL = 12 IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/s 2SK1404 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 40 10 5 (1 n 0.2 (T c = t) Operation in this area is limited by RDS (on) o Sh 50 100 25 C ) Ta = 25C 1 150 3 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 Pulse Test 10 V VDS = 20 V Pulse Test 8 5V 4.5 V 6 4 4V 2 VGS = 3 V Drain Current ID (A) 6V 0 10 Case Temperature Tc (C) 10 8 6 4 Tc = 75C 2 25C 3.5 V -25C 0 0 10 20 30 50 40 0 4 2 6 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 ID = 5 A 6 4 2A 2 1A 0 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.3.00 May 15, 2006 page 3 of 6 Static Drain to Source on State Resistance RDS (on) () Drain Current ID (A) s tio 0.5 0.05 0 Drain to Source Saturation Voltage VDS (on) (V) m ra 0.1 0 O pe 1 s s 2 10 C s m D 0 1 20 10 10 = Drain Current ID (A) 20 PW Channel Dissipation Pch (W) 60 50 Pulse Test 20 10 5 VGS = 10 V 2 1 0.5 0.2 15 V 0.5 1 2 5 Drain Current ID (A) 10 20 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 5 VGS = 10 V Pulse Test 4 3 ID = 5 A 2 2A 1 1A 0 -40 40 0 80 120 160 Tc = -25C 2 1 25C 0.5 75C 0.2 0.1 0.05 0.5 1 5 2 Typical Capacitance vs. Drain to Source Voltage 10000 VGS = 0 f = 1 MHz Capacitance C (pF) 500 200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25C Pulse Test 20 10 0.05 1000 0.1 0.5 0.2 1 2 Crss 10 0 5 10 30 20 40 50 Dynamic Input Characteristics Switching Characteristics VDD = 100 V 250 V 400 V 600 12 VGS 8 VDS VDD = 400 V 250 V 100 V 200 4 0 8 500 20 16 0 Coss 100 Drain to Source Voltage VDS (V) ID = 5 A 400 Ciss 1000 Reverse Drain Current IDR (A) 800 0 0.2 0.1 Body to Drain Diode Reverse Recovery Time 16 24 32 Gate Charge Qg (nc) Rev.3.00 May 15, 2006 page 4 of 6 40 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) VDS = 20 V Pulse Test 5 Drain Current ID (A) 1000 Drain to Source Voltage VDS (V) 10 Case Temperature Tc (C) VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 % Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) () 2SK1404 200 td(off) 100 tf 50 tr 20 td(on) 10 5 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK1404 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 VGS = 5 V, 10 V 2 0, -5 V 0.4 0 0.8 1.2 2.0 1.6 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C 0.1 0.1 0.03 0.05 PDM 0.02 0.01 ulse P hot 1S 0.01 10 T 100 1m 10 m 100 m D = PW T PW 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin D.U.T. RL Vin 10 V 50 Rev.3.00 May 15, 2006 page 5 of 6 V.DD =. 30 V Vout 10% 10% 90% td (on) tr 10% 90% td (off) tf 2SK1404 Package Dimensions Package Name TO-220FM JEITA Package Code SC-67 Previous Code TO-220FM / TO-220FMV RENESAS Code PRSS0003AD-A MASS[Typ.] 1.8g 10.0 0.3 Unit: mm 2.8 0.2 3.2 0.2 2.5 0.2 4.45 0.3 14.0 1.0 5.0 0.3 1.2 0.2 1.4 0.2 2.0 0.3 12.0 0.3 17.0 0.3 0.6 7.0 0.3 2.5 0.7 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Ordering Information Part Name 2SK1404-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 May 15, 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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