TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50DA Switching Regulator Applications * * * * Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 12.5 Pulse (Note 1) IDP 50 Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy (Note 2) EAS 416 mJ Avalanche current IAR 12.5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 C TOSHIBA Storage temperature range Tstg -55 to 150 C Weight: 1.7 g (typ.) Drain current A 1: Gate 2: Drain 3: Source JEDEC JEITA SC-67 2-10U1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods'') and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W 2 Note 1: Ensure that the channel temperature does not exceed 150C. 1 Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.53 mH, RG = 25 , IAR = 12.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 Start of commercial production 2008-09 1 2013-11-01 TK13A50DA Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 30 V, VDS = 0 V 1 A Drain cut-off current IDSS VDS = 500 V, VGS = 0 V 10 A V (BR) DSS ID = 10 mA, VGS = 0 V 500 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 6.3 A 0.39 0.47 Forward transfer admittance |Yfs| VDS = 10 V, ID = 6.3 A 1.5 6.0 S Input capacitance Ciss 1550 Reverse transfer capacitance Crss 7 Output capacitance Coss 165 25 60 Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton tf Turn-off time VOUT RL = 32 50 Switching time Fall time ID = 6.3 A 10 V VGS 0V tr VDD 200 V toff Duty 1%, tw = 10 s Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD 400 V, VGS = 10 V, ID = 12.5 A pF ns 15 110 28 18 10 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 12.5 A IDRP 50 A Pulse drain reverse current (Note 1) Forward voltage (diode) VDSF IDR = 12.5 A, VGS = 0 V -1.7 V Reverse recovery time trr IDR = 12.5 A, VGS = 0 V, 1300 ns Reverse recovery charge Qrr dIDR/dt = 100 A/s 13 C Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K13A50DA Please contact your TOSHIBA sales representative for details as to Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product. Lot No. Note 4 The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 TK13A50DA ID - VDS COMMON SOURCE Tc = 25C 8 PULSE TEST ID - VDS 20 10,8 10,8 (A) 6 5.75 6 5.5 4 5.25 5 2 COMMON SOURCE Tc = 25C PULSE TEST 6.75 6.25 DRAIN CURRENT ID DRAIN CURRENT ID (A) 10 16 6.5 6.25 12 6 8 5.75 5.5 4 VGS = 5 V VGS = 4.5 V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS 0 0 10 (V) 10 20 VDS (V) 16 12 8 Tc = -55C 100 4 25 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS 10 10 8 ID = 12.5 A 4 6.3 2 3 0 0 4 8 DRAIN-SOURCE ON RESISTANCE RDS (ON) () FORWARD TRANSFER ADMITTANCE Yfs (S) 16 VGS 20 (V) RDS (ON) - ID 10 Tc = -55C 25 1 1 12 GATE-SOURCE VOLTAGE 100 0.1 0.1 (V) 6 (V) COMMON SOURCE VDS = 20 V PULSE TEST 10 VDS COMMON SOURCE Tc = 25C PULSE TEST Yfs - ID 100 50 VDS - VGS COMMON SOURCE VDS = 20 V PULSE TEST DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID 20 40 DRAIN-SOURCE VOLTAGE ID - VGS 24 30 DRAIN CURRENT ID 1 VGS = 10 V, 15 V 0.1 0.1 100 10 COMMON SOURCE Tc = 25C PULSE TEST (A) 1 10 DRAIN CURRENT ID 3 100 (A) 2013-11-01 TK13A50DA RDS (ON) - Tc COMMON SOURCE VGS = 10 V PULSE TEST 1.2 ID = 12.5 A 6.3 0.8 3 0.4 -40 0 40 80 CASE TEMPERATURE 120 Tc 10 1 10 5 3 0.1 0 160 (C) -0.4 CAPACITANCE - VDS GATE THRESHOLD VOLTAGE Vth (V) -1.2 VDS -1.4 (V) Crss COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10 3 2 COMMON SOURCE 1 V DS = 10 V ID = 1 mA PULSE TEST 0 -80 100 VDS 4 (V) -40 VDS (V) DRAIN-SOURCE VOLTAGE 60 40 20 120 CASE TEMPERATURE 80 120 Tc 160 (C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 80 80 40 CASE TEMPERATURE PD - Tc 40 0 160 Tc 200 (C) 500 20 VDS 400 16 300 12 VDD = 100 V 400 200 8 200 VGS 100 0 0 10 20 COMMON SOURCE ID = 12.5 A Tc = 25C PULSE TEST 30 TOTAL GATE CHARGE 4 0 50 40 Qg 4 (V) (pF) C CAPACITANCE Coss 100 DRAIN-SOURCE VOLTAGE DRAIN POWER DISSIPATION PD (W) -1.0 Vth - Tc Ciss 0 0 -0.8 5 1000 1 0.1 -0.6 DRAIN-SOURCE VOLTAGE 10000 10 VGS = 0, -1 V 1 -0.2 VGS 0 -80 COMMON SOURCE Tc = 25C PULSE TEST GATE-SOURCE VOLTAGE 1.6 IDR - VDS 100 DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON-RESISTANCE RDS (ON) ( ) 2.0 (nC) 2013-11-01 TK13A50DA NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth - tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 SINGLE PULSE t 0.01 T 0.01 0.001 10 Duty = t/T Rth (ch-c) = 2.78C/W 100 1m 10m PULSE WIDTH 100m 1 10 tw (s) EAS - Tch SAFE OPERATING AREA 100 500 ID max (pulsed) * 1 ms * ID (A) 10 AVALANCHE ENERGY EAS (mJ) 100 s * ID max (continuous) DRAIN CURRENT 1 DC operation Tc = 25C 0.1 0.001 1 300 200 100 0 25 *: SINGLE NONREPETITIVE 0.01 400 50 75 100 125 150 PULSE Tc = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 10 CHANNEL TEMPERATURE (INITIAL) Tch(C) VDSS max 100 DRAIN-SOURCE VOLTAGE 15 V 1000 VDS (V) BVDSS IAR -15 V VDD TEST CIRCUIT RG = 25 VDD = 90 V, L = 4.53 mH 5 VDS WAVEFORM AS = 1 B VDSS L I2 B 2 - V VDSS DD 2013-11-01 TK13A50DA RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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