gv0uouN vuu0009 4224242 e e asymmetrical thyristors m . ra thyristors asymtriques THOMSON-CSF Tamb = 25C lo JYoRm RRM/'TSM - ipm tq* E,* Types firm! tru [Yer] !et | di/ae | @ Case 10 ms VpRM max|max{ max | max max (A) ] (Vv) (V) (A) Pv) (A) 7 CV) ECA) [(A/us)] (mA) tus) (mJ) | ae = _ 2 tp = 10 ns 5 ws ha 40 A peak @ 20 kHz / Tease = 80C Tj = 125C t= 300As dvidt = 200V/us sine pulse (50 % duty cycle) VGK = 5V TSD 035 50 TSD 235 200 : TSD 435 400 ae : : TDS 635 22}... 600 10 250] 2,4 704 1,540.2 } 100 5 oS. de 28 -max.- TSD 835 800 typ : Bee. TSD 1035 1000 , TSD 1235 1200 a"-28 UNE** 2 | Itm = 200A fitw = 250A 250 A peak @ 20 kHz / Tease = 80C Tj = 125C t= 20.000 A's] t, = 25us 25 ys half (50 % duty cycle) idv/dt = 600V/us | sine pulse TIA 02804D130 400 TIA 02806130 : po TIA 02808D13 10 TIA 028100130 | '78] 1000 10 2000 2.6 300} 3 J 5 800 30 TIA 02812D130 1200 yp TIA 02814D130 1400 - Irm = 200A [itm = 250A 250 A peak @ 20 kHz / Tcase = 80C Tj = 125C It = 20.000 As| 25 us | D8 us halt {50 % Duty cycle) With amplifying gate dv/dt = 600V/ys } sine pulse TA 329 ea 400 ee poe TA 329 06 600 / ot & = TA 329 080 800 ie | TA 329 100 178} y999 | 10 | 2000 25 300} 3 ]0,25] 800 | 30 | 19 Gate open) | 20 max & TA 329 120 1200 YP Oey TA 329 140 1400 os . MU 86 > 17 =200A 400 Arms / Tease = 80C Tj = 125C It = 80000 As avidee SOGV/us With amplifying gate di/dt = 30A Mus | TA 449 04 W 400 | = TA 449 06 W 00 TA 449 08 W ( TA 449 10 W 257 1000 10 4000)2,4 1000] 3 |.02 | 800 40 ~ TA 449 12 W 1200 TA 449 14 W 1400 > , (T=250A 1550 Arms / Tease = 80C Ty = 125C rt=2 000 000 A's R=>IV With amplifying gate eva = SOA) vs TA 925 12 (B,Z) 1200 TA 925 14 (B,Z) 1400 TA 925 16 (B,Z) |955- 1600 10 2000042,14 2000] 3 04 800 60 TA 925 18 (B,Z) 1800 max TA 925 20 (B,Z) 2000 *@T; = 125C _ New product. _ Product in development. N * Nouveau produit, D * Produit en dveloppement. ** M6 thread available on request -Type number + suffix M Filetage M6 sur demande = N de type + suffixe M 196