BCP69_NL - Fairchild Semiconductor

BCP69 Rev. B

BCP69 PNP General Purpose Amplifier

January 2007

BCP69

PNP General Purpose Amplifier

• This device is designed for general purpose medium power amplifiers

and switches requiring collector cu rrents to 1.0A.

• Sourced from Process 77.

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are b ased on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics* Ta=25°C unless otherwise noted

* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2

Electrical Characteristics* Ta = 25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage -20 V

VCBO Collector-Base Voltage -30 V

VEBO Emitter-Base Voltage -5.0 V

ICCollector Current - Continuous -1.5 A

TJJunction Temperature 150 °C

TSTG Storage Temperature Range - 55 ~ +150 °C

Symbol Parameter Value Units

PDTotal Device Dissipation

Derate above 25°C1.0

8.0 W

mW/°C

RθJA Thermal Resistance, Junction to Ambient 125 °C/W

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -20 V

BVCBO Collector-Base Breakdown Voltage IC = -1.0mA, IE = 0 -30 V

BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V

ICBO Collector-Base Cutoff Current VCB = -25V, IE = 0

VCB = -25V, IE = 0, Tj = 150oC-100

-10 nA

IEBO Emitter-Base Cutoff Current VEB = -5.0V, IC = 0 -100 nA

hFE DC Current Gain IC = -5mA, VCE = -1.0V

IC = -500mA, VCE = -1.0V

IC = -1.0A, VCE = -1.0V

60 375

VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -0.5 V

VBE(on) Base-Emitter On Voltage IC = -1.0A, VCE = -1.0V -1.0 V

Ccb Collector-Base Capacitance VCB = -10V, IE = 0, f = 1.0M Hz 30 pF

hfe Small-Signal Current Gain IC = -50mA, VCE = -10V, f = 20MHz 2.5

SOT-223

1. Base 2. Collector 3. Emitter

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BCP69 Rev. B

BCP69 PNP General Purpose Amplifier

Collector-Base Capaci tance

vs Collector -Base Vol tage

0102030

V - CO LL ECTO R-BA SE VOLTA GE ( V )

C - COLLECTOR-BASE CAPACITANCE (pF)

OBO

f = 1. 0 MHz

Base-Emitter ON Voltage vs

Collector Cur rent

110100100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BA SE-EMITTER ON VOLTAGE (V)

BE(ON)

V = 5. 0 V

- 40 °C

25°C

125°C

Base-Emi tter Satu ratio n

Voltage vs Collector Current

1 10 100 1000

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA )

V - BASE-EMI TTER VOLTAGE (V)

BESAT

β= 10

- 40 °C

25 °C

125 °C

Co llector-Cu toff Current

vs Amb ien t Temperature

25 50 75 100 125 150

0.1

100

T - AM BIENT TEM P E RATURE ( C)

I - COLLECTOR CURR ENT (nA)

V = 20 V

CBO

Typical Performance Characteristics

Collector-Emi tter Satu r ati on

Voltage vs Collec tor Cu rrent

0.01 0.1 1 3

0.2

0.4

0.6

0.8

I - COLLE CTOR CURRENT (A )

V - COLLECT OR-EMITTER VOLT AG E ( V)

CESAT

- 40 °C

25 °C

β= 10

125 °C

Typ ical Pu lsed C urr ent Gai n

vs Col lector Cur rent

0.01 0.1 1 2

100

150

200

250

300

I - COLLECTOR CURRENT ( A)

h - TYPIC AL PULSED CURRENT GAIN

- 40 °C

25 °C

V = 5.0V

125 °C

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BCP69 Rev. B

BCP69 PNP General Purpose Amplifier

Typical Performance Characteristics

Power Dissipation vs

A mb ien t Temp erature

0 25 50 75 100 125 15

100

200

300

400

500

600

700

TE M P ERAT URE ( C)

P - P OWE R DIS SIPATI ON ( mW)

TO-92

Gain Bandwidth Product

vs Col lect o r Curre n t

1 10 100 1000

100

150

200

250

I - COLLECTOR CURRENT (mA)

f - GA IN BA ND WIDT H PRODU CT (M Hz )

V = 10V

0 255075100125150

0.0

0.5

1.0

1.5

PC[W], POWER DISSIPATION

Ta[oC], AM BIENT TEMPERATURE

Power Dissipation vs

A mb ien t Temp erature

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BCP69 Rev. B

BCP69 PNP General Purpose Amplifier

Mechanical Dimensions

3.00

±0.10

7.00

±0.30

0.65

±0.20

0.08MAX

3.50

±0.20

.60

±0.20

(

0.46)

(

0.89)

(0.60) (0.60)

1.75

±0.20

0.70

±0.10

4.60

±0.25

6.50

±0.20

(0.95) (0.95)

2.30 TYP

0.25

MAX1.80

0°~10°

+0.10

–0.05

0.06

+0.04

–0.02

SOT-223

Dimensions in Millimeters

FAIRCHILD SEMICONDUCTOR TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to

be an exhaustive list of all such trademarks.

BCP69 PNP General Purpose Amplifier

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCH ILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE

OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE

RIGHTS OF OTHERS. THESE SPECIFI CATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-

CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEV ICES OR SYSTEMS W ITHOUT

THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant int o the body, or (b) support or sustain life , or

instructions for use provided in the labeling, can be reasonably expected

to result in significant injury to the user.

2. A critical compone nt is any component of a life support device or system

whose failure to perform can be reasonably expected to cause the failu re

of the life support device or system, or t o affect it s safety or ef fectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the des ign specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contai ns specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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BCP69 Rev. B

BCP69 PNP General Purpose Amplifier