KE C SEMICONDUCTOR TIP122 KOREA ELECTRONICS CO.LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A APPLICATIONS. R 8 FEATURES te . * High DC Current Gain : hpp=1000(Min.) at Ver=3V, Ic=3A. | ____ * High Collector Breakdown Voltage : Vcro=100V(Min.) | . A 10.30 MAK | B 15.30 MAX c 0.80 1 D 93.60+0.20 : yi) i E 3.00 F 6.70 MAX MAXIMUM RATINGS (Ta=25C) L Uy [seit c | _jL H 5.60 MAX CHARACTERISTIC SYMBOL | RATING | UNIT z aa vu... L 1.50 MAX Collector-Base Voltage Veczo 100 Vv K M 254 ELS 1 . N 4.70 MAX Collector-Emitter Voltage Vero 100 Vv He e 5 oa uk if Q 1.50 Emitter-Base Voltage VeEno 5 V 1. BASE ; _ 2. COLLECTOR (HEAT SINK) T 2.90 Ax DC 5 3. EMITTER Collector Current Ic A Pules 8 TO220AB Base Current Ip 0.12 A Collector Power Dissipation P 65 w (Te=25C) C EQUIVALENT CIRCUIT Junction Temperature Tj 150 Cc 5 Storage Temperature Range Taig -55 ~ 150 Cc oo oo g p g te noe tT NX. I Ri Re = 8kQ 1200 E ELECTRICAL CHARACTERISTICS (Ta=25T ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. | MAX. | UNIT Collector Cut-off Current Icno Vcn=l00V, In=0 - 0.2 mA Emitter Cut-off Current Tigo Ven=5V, Ic=0 - - 2 mA Collector-Emitter _ 2 _ _ Breakdown Voltage Vero Ic=10mA, In=0 100 Vv hrr(1) Ver=38V, I[c=0.5A 1000 - 10000 DC Current Gain hrr(2) Vcr=3V, [=3A 1000 _ _ Collector-Emitter Vouat) 1 | Ic=3A, In-12mA 7 ~ 2 Vv Saturation Voltage Vert) 2 | Ie=5A, In=20mA _ 4 Base-Emitter Voltage VnE Vcr=3V, Ic=3A - 2.5 Vv Output Capacitance Cob Vep=10V, In=0, f=1MHz - - 300 pF 1999. 1. 11 Revision No : 1 KEC 1/2TIP122 I/Ip=250 VBE( VcE(sat 1999. 1. 11 Revision No : 1 KEC 2/2