HL6323MG - Renesas Technology / Hitachi Semiconductor

HL6323MG

AlGaInP Laser Diode

ADE-208-1410 (Z)

1st Edition

Mar. 2001

Description

The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure.

It is suitable as a longer distance operating range for laser markers and a higher speed for positioning

control sensors. The HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept

small.

Application

• Laser markers

• Measurement equipment

Features

• High output power : 35 mW (CW)

• Visible light output : λp = 639 nm Typ

• Small package : φ5.6 mm

• TM mode oscillation

LDPD

Internal Circuit

Pakage Type

• HL6323MG: MG

HL6323MG

Absolute Maximum Ratings (TC = 25°C ± 3°C)

Item Symbol Value Unit

Optical output power PO35 *1mW

Optical output power (Puise) PO50 *2mW

LD reverse voltage VR(LD) 2V

PD reverse voltage VR(PD) 30 V

Operating temperature Topr −10 to +50 °C

Storage temperature Tstg −40 to +85 °C

Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime.

2. Pulse condition : Pulse width pw = 100 ns , duty = 20%

Optical and Electrical Characteristics (TC = 25°C ± 3°C)

Item Symbol Min Typ Max Unit Test Condition

Optical output power PO35  mW Kink free *

Optical output power (Puise) PO50  mW Kink free *

Threshold current Ith 30 45 65 mA

Slope efficiency ηs 0.4 0.6 0.9 mW/mA 18(mW) / (I(24mW) – I(6mW))

Operating current IOP 95 130 mA PO = 30 mW

Operating voltage VOP 2.3 2.8 V PO = 30 mW

Beam divergence parallel to

the junction θ// 7 8.5 11 deg. PO = 30 mW

Beam divergence

parpendicular to the junction θ⊥ 26 30 34 deg. PO = 30 mW

Lasing wavelength λp 635 639 642 nm PO = 30 mW

Monitor current IS0.05 0.15 0.25 mA PO = 30 mW, VR(PD) = 5 V

Note: Kink free is confirmed at the temperature of 25°C.

HL6323MG

Typical Characteristic Curves

Slope Efficiency vs. Case Temperature

Case temperature, TC (°C)

Case temperature, TC (°C) 050

050

3020

Slope efficiency, ηs (mW/mA)

0.2

0.4

0.6

0.8

1.0

Optical output power, PO (mW)

00160

Forward current, IF (mA)

Opticai Output Power vs. Forward Current

Optical output power, PO (mW)

Monitor current, IS (mA)

0.25

0.20

0.15

0.10

010 20 50

Monitor Current vs. Optical Output Power

100

Threshold current, Ith (mA)

Threshold Current vs. Case Temperature

120

80 200

0.05

30 40

VR(PD) = 5V

TC = 25°C

TC = 0°C

TC = 25°C

TC = 50°C

HL6323MG

Lasing Spectrum

Wavelength, λp (nm)

630 640 650

Relative intensity

Lasing Wavelength vs. Case Temperature

Lasing wavelength, λp (nm)

630

634

642

646

638

Polarization Ratio vs. Optical Output Power

Optical output power, PO (mW)

020

10 50

Polarization ratio

100

150

200

Monitor Current vs. Case Temperature

010 20 30 40

Monitor current, IS (mA)

0.05

0.10

0.15

0.20

250

Case temperature, TC (°C) 010 20 30 40 50

Case temperature, TC (°C)

PO = 30mW

VR(PD) = 5V PO = 30mW

PO = 30mW

PO = 20mW

PO = 5mW

TC = 25°C

0.25

644

640

636

632

PO = 10mW

30 40

TC = 25°C

NA = 0.4

HL6323MG

0010 3020 40 50

Astigmatism vs. Optical Output Power

100

Survival rate (%)

Applied voltage (kV)

Electrostatic Destruction (MIL standard)

02.0 3.0

0.5

Forward

N = 5 pcs

∆IOP ≤ 10%

0.2

0.4

0.6

0.8

1.0

−40 0 40

Angle, θ (deg.)

Relative intensity

Far Field Pattern

Optical output power, PO (mW)

PO = 30mW

TC = 25°C

NA = 0.4

−30 −20 −10 10 20 30

1.0 1.5 2.5

Gain (dB)

Frequency (Hz)

Frequency Response

1M 100M 3G

10M

3dB/div

PO = 3mW

TC = 25°C

Perpendicular

Parallel

Astigmatism, AS (µm)

HL6323MG

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LD/MG

—

0.3 g

Unit: mm

5.6

–0.025

1.0 ± 0.1

(0.4)

(90°)

1.6 ± 0.2

0.4

+0.1

–0

φ4.1 ± 0.3

3.55 ± 0.1

0.25

Glass

1.27

3 – 0.45 ± 0.1

6.5 ± 1.0

1.2 ± 0.1 2.3 ± 0.2

123

2.0 ± 0.2

Emitting Point

HL6323MG

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The

laser beam shall be observed or adjusted through infrared camera or equivalent.

HL6323MG

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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(Taipei Branch Office)

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