DATA SHEET Silicon Transistor NE97733 / 2SA1977 JEITA Part No. D PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER _0.2 2.8+ High fT 0.4 +0.1 -0.05 * PACKAGE DIMENSION (in millimeters) fT = 8.5 GHz TYP. * UE FEATURES High gain 1.5 0.65 +0.1 -0.15 Equivalent NPN transistor is the NE68133 / 2SC3583. VCE0 Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature V -12 V VEB0 -3.0 V IC -50 mA PT 200 mW Tj 150 C -65 to +150 C Tstg SC O ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Symbol Marking 0.16 +0.1 -0.06 Collector to Emitter Voltage -20 Test Conditions 0 to 0.1 VCB0 Unit NT Collector to Base Voltage Rating 0.3 Symbol 3 1 1.1 to 1.4 Parameter IN ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 0.4 +0.1 -0.05 High-speed switching characterstics * 0.95 * 0.95 2 _0.2 2.9+ | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA PIN CONNECTIONS 1: Emitter 2: Base 3: Collector Marking; T92 MIN. TYP. MAX. Unit Collector Cutoff Current ICB0 VCB = -10 V -0.1 A Emitter Cutoff Current IEB0 VEB = -1 V -0.1 A DC Current Gain hFE VCE = -8 V, IC = -20 mA 20 Gain Bandwidth Product fT VCE = -8 V, IC = -20 mA, f = 1 GHz 6.0 Collector Capacitance Cre* | S21e | Noise Figure NF DI Insertion Power Gain VCB = -10 V, IE = 0, f = 1 MHz 2 VCE = -8 V, IC = -20 mA, f = 1.0 GHz VCE = -8 V, IC = -3 mA, f = 1 GHz 100 8.5 0.5 8.0 Rank FB Marking T92 hFE 20 to 100 Document No. P10925EJ1V0DS00 (1st edition) Date Published April 1996 P 1 12.0 1.5 * Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification GHz pF dB 3 dB NE97733 / 2SA1977 SWITCHING CHARACTERISTICS Vin = 1 V Parameter Symbol Turn-on Delay Time ton (delay) 1.08 ns Rise Time tr 0.66 ns Turn off Delay Time toff (delay) 0.32 ns Fall Time tf 0.78 ns SWITCHING TIME MEASUREMENT CIRCUIT RC1 Vin RC2 RL2 Sampling Oscilloscope RS 50 ton (delay) VOUT VSS ( - ) NT RE VEE ( + ) Vin = 1 V, VBB = -0.5 V, RC1 = RC2 RC RL1 () () () 160 1k 200 RL2 RE VEE VCC () () (V) (V) 250 2.7 k 27 26.3 DI SC O RS 2 20 ns tr IN RL1 VOUT Vin VCC ( - ) UE D Unit TYP. toff (delay) tr NE97733 / 2SA1977 TYPICAL CHARACTERISTICS D 200 100 0 50 100 UE 300 150 200 IN PT - Total Power Dissipation - mV 400 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DI SC O NT TA - Ambient Temperature - C 3 NE97733 / 2SA1977 VCE = -1 V D -1.0 -0.1 -0.01 -0.1 -1.0 -10 UE VBE (ON) - DC Base Voltage - V -10 BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT -100 -1000 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT SC O VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V -10 NT IN IC - Collector Current - mA VBE (S) -1.0 VCE (S) -0.1 DI -0.01 -0.1 4 IC = 10 * IB -1.0 -10 IC - Collector Current - mA -100 -1000 NE97733 / 2SA1977 5 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE D -10 |S21e|2- Insertion Power Gain - dB SC O VCB - Collector to Base Voltage - V VCE = -8 V IC = -20 mA 30 0.5 -10 -100 INSERTION GAIN vs. FREQUENCY 35 1 DI Cre - Collector Feed-back Capacitance - pF 2 IC - Collector Current - mA f = 1 MHz 0 -1 4 NT 1.5 6 0 -1 -100 IC - Collector Current - mA 8 IN -10 VCE = -8 V UE 10 0 -1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 VCE = -8 V f = 1 GHz fT - Gain Bandwidth Product - GHz |S21e|2- Insertion Power Gain - dB 15 INSERTION GAIN vs. FREQUENCY 25 20 15 10 5 0 -5 -10 -100 -15 0.1 0.2 0.3 0.4 0.5 1.0 2.0 3.0 f - Frequency - GHz 5 NE97733 / 2SA1977 DC CURRENT GAIN vs. COLLECTOR CURRENT 50 40 30 20 D VCE = -3 V VCE = -2 V VCE = -1 V 10 1.0 -0.1 -1.0 -10 UE hFE - DC Current Gain 100 -100 -1000 100 DC CURRENT GAIN vs. COLLECTOR CURRENT hFE - DC Current Gain SC O 50 40 30 NT IN IC - Collector Current - mA VCE = -8 V 20 10 5 4 3 2 DI 1 -0.1 6 -1.0 -10 IC - Collector Current - mA -100 -1000 NE97733 / 2SA1977 S11 UE 3.0 GHZ D VCE = -8 V IC = -20 mA SC O S22 NT IN 0.1 GHZ VCE = -8 V IC = -20 mA 3.0 GHZ DI 0.1 GHZ 7 NE97733 / 2SA1977 S-PARAMETER (VCE = 1 V, IC = 5 mA, Zo = 50 ) MHz MAG ANG MAG 100 0.553 - 43.7 11.03 200 0.460 - 78.2 300 0.427 - 104 5.700 S12 ANG S22 MAG ANG 150. 0.423 71.2 8.780 129. 0.691 59.4 7.003 115. 0.857 54.4 0.393 500 0.377 - 138 4.74 105. 97.6 600 0.367 - 149 4.053 91.2 700 0.362 - 159 3.549 85.9 800 0.363 - 168 3.151 61.3 900 0.364 - 175 2.847 77.0 1000 0.365 178 2.603 73.0 1100 0.369 172 2.391 1200 0.375 166 2.219 1300 0.376 162 2.070 1400 0.384 157 1.940 1500 0.391 153 1600 0.399 149 1700 0.405 146 1800 0.411 142 1900 0.418 139 2000 0.423 135 ANG 0.666 - 25.0 0.696 - 42.2 0.556 - 52.9 0.983 52.7 0.461 - 59.5 0.109 52.2 0.392 - 64.2 0.120 52.5 0.341 - 67.4 0.131 52.9 0.307 - 70.5 0.143 53.1 0.280 - 73.7 0.154 53.8 0.258 - 76.1 0.165 54.0 0.241 - 78.8 69.3 0.176 54.4 0.227 - 82.0 66.8 0.188 54.2 0.217 - 84.8 62.7 0.200 54.4 0.207 - 88.4 59.4 0.213 54.1 0.200 - 92.0 1.838 56.3 0.225 53.8 0.192 - 94.9 1.744 53.5 0.238 53.4 0.188 - 99.1 1.659 50.8 0.250 52.9 0.184 - 102 1.584 48.2 0.264 52.3 0.184 - 107 1.520 45.6 0.277 51.7 0.182 - 111 1.461 43.1 0.290 51.1 0.181 - 115 SC O NT IN 400 - 123 MAG D S21 S11 UE f 0.429 132 1.408 40.9 0.302 50.2 0.180 - 119 2200 0.438 130 1.361 38.6 0.314 49.4 0.182 - 125 2300 0.444 127 1.316 36.4 0.328 48.5 0.181 - 128 2400 0.450 124 1.276 34.2 0.341 47.6 0.187 - 132 2500 0.457 122 1.239 32.3 0.353 46.5 0.188 - 137 DI 2100 8 NE97733 / 2SA1977 S-PARAMETER (VCE = 3 V, IC = 5 mA, Zo = 50 ) S21 S11 ANG 100 0.595 - 34.2 200 0.511 - 62.8 300 0.432 - 86.0 MAG ANG MAG ANG MAG ANG 154. 0.0328 74.9 0.902 - 19.4 9.618 134. 0.0573 64.8 0.760 - 33.2 7.920 120. 0.0734 58.5 0.633 - 41.9 11.62 0.0852 57.1 0.542 - 47.3 0.362 6.575 110. 500 0.345 - 119 5.511 102. 0.0964 55.9 0.471 - 50.3 600 0.323 - 132 4.749 95.9 0.106 56.4 0.420 - 52.2 700 0.308 - 143 4.177 90.5 0.116 56.6 0.383 - 54.1 800 0.300 - 153 3.712 85.8 0.126 57.1 0.355 - 55.7 900 0.297 - 162 3.359 81.5 0.137 57.3 0.332 - 57.2 1000 0.295 - 170 3.064 77.6 0.147 57.9 0.315 - 58.9 1100 0.297 - 177 2.818 74.0 0.158 57.9 0.299 - 60.6 1200 0.300 176 2.617 70.6 0.169 58.3 0.287 - 62.1 1300 0.303 170 2.439 67.4 0.181 58.1 0.276 - 64.6 1400 0.308 164 2.284 64.2 0.192 58.1 0.266 - 66.5 1500 0.314 160 2.159 61.2 0.203 57.8 0.258 - 68.5 1600 0.322 155 2.046 58.4 0.215 57.5 0.250 - 71.4 1700 0.328 151 1.944 55.7 0.227 57.3 0.243 - 73.6 1800 0.335 147 1.855 53.0 0.240 56.5 0.241 - 76.9 1900 0.341 143 1.774 50.5 0.252 56.1 0.233 - 80.3 2000 0.349 140 1.705 48.1 0.264 55.5 0.230 - 83.1 NT IN 400 - 104 D MAG S22 SC O MHz S12 UE f 2100 0.355 136 1.638 45.7 0.276 54.7 0.226 - 86.5 2200 0.364 133 1.583 43.5 0.289 54.2 0.222 - 90.7 2300 0.372 130 1.53 41.2 0.302 53.2 0.218 - 93.6 2400 0.378 128 1.479 39.0 0.314 52.5 0.218 - 97.5 2500 0.386 125 1.439 37.0 0.326 51.7 0.215 DI - 101. 9 NE97733 / 2SA1977 S-PARAMETER (VCE = 8 V, IC = 5 mA, Zo = 50 ) MHz MAG ANG 100 0.679 200 0.586 300 0.491 - 71.0 - 87.3 S12 S22 MAG ANG MAG ANG - 27.6 11.75 156. 0.0289 76.9 - 51.4 10.01 138. 0.0508 66.6 124. 0.0670 61.8 8.453 MAG ANG 0.918 - 15.9 0.802 - 27.7 D S21 S11 0.690 - 35.3 UE f 0.417 7.152 114. 0.0780 58.9 0.603 500 0.362 - 100 6.040 106. 0.0886 58.3 0.534 - 42.5 600 0.323 - 113 5.245 99.6 0.0984 57.9 0.485 - 44.0 700 0.293 - 124 4.627 94.2 0.107 58.0 0.448 - 45.5 800 0.274 - 135 4.124 89.4 0.117 58.4 0.419 - 46.6 900 0.261 - 145 3.734 85.0 0.126 58.6 0.396 - 47.7 1000 0.251 - 154 3.419 81.2 0.135 59.4 0.377 - 48.8 1100 0.247 - 162 3.150 77.6 0.145 59.6 0.361 - 50.2 1200 0.245 - 170 2.919 74.2 0.155 59.6 0.350 - 51.4 1300 0.245 - 177 2.720 71.0 0.166 59.8 0.339 - 53.2 1400 0.247 175 2.551 67.8 0.176 59.9 0.327 - 54.6 1500 0.251 169 2.410 64.8 0.187 59.7 0.320 - 56.1 1600 0.258 164 2.283 62.1 0.198 59.5 0.311 - 58.2 1700 0.263 159 2.169 59.3 0.209 59.4 0.305 - 59.8 1800 0.269 154 2.067 56.7 0.221 58.9 0.299 - 62.4 1900 0.276 150 1.977 54.4 0.232 58.6 0.292 - 64.9 2000 0.283 146 1.898 51.8 0.243 58.1 0.287 - 67.0 SC O NT IN 400 - 39.9 0.290 142 1.824 49.5 0.256 57.5 0.283 - 69.6 2200 0.298 138 1.762 47.2 0.267 57.0 0.277 - 72.9 2300 0.307 135 1.701 44.9 0.279 56.1 0.272 - 75.1 2400 0.314 132 1.645 42.8 0.291 55.4 0.270 - 78.7 2500 0.321 129 1.597 40.6 0.304 54.7 0.264 - 81.3 DI 2100 10 NE97733 / 2SA1977 S-PARAMETER (VCE = 8 V, IC = 20 mA, Zo = 50 ) S21 S11 MAG 100 0.310 - 47.6 20.39 200 0.243 - 82.1 300 0.205 400 ANG MAG ANG MAG ANG 144. 0.0218 77.0 0.798 - 25.2 14.87 123. 0.0375 72.7 0.611 - 37.8 - 107 11.25 111. 0.0514 71.4 0.488 - 43.1 0.165 - 125 8.95 102. 0.0643 71.6 0.417 - 45.1 500 0.172 - 140 7.329 96.6 0.0777 71.5 0.365 - 45.7 600 0.169 - 153 6.232 91.6 0.0909 71.5 0.331 - 45.8 700 0.166 - 163 5.414 87.5 0.104 71.0 0.308 - 46.5 800 0.169 - 173 4.778 83.5 0.117 70.6 0.289 - 47.3 900 0.172 179 4.3 80.2 0.130 70.0 0.274 - 47.9 1000 0.176 172 3.902 77.1 0.143 69.3 0.262 - 49.1 1100 0.182 166 3.576 74.1 0.156 68.6 0.251 - 50.4 1200 0.188 160 3.310 71.2 0.169 67.7 0.244 - 51.5 1300 0.194 156 3.080 68.7 0.182 66.7 0.235 - 53.7 1400 0.202 151 2.875 66.0 0.195 66.0 0.227 - 55.6 1500 0.209 147 2.711 63.4 0.208 64.9 0.221 - 57.0 1600 0.217 144 2.564 61.0 0.221 63.9 0.213 - 59.5 1700 0.224 140 2.431 58.6 0.234 62.8 0.209 - 61.7 1800 0.233 137 2.315 56.4 0.247 61.7 0.204 - 64.7 1900 0.240 134 2.212 54.2 0.259 60.8 0.197 - 67.9 2000 0.247 132 2.123 52.0 0.272 59.8 0.193 - 70.0 D ANG UE MAG S22 NT IN MHz S12 SC O f 0.255 129 2.037 49.8 0.284 58.3 0.188 - 73.3 2200 0.263 126 1.965 47.7 0.296 57.2 0.183 - 77.5 2300 0.272 124 1.896 45.7 0.309 56.1 0.179 - 80.1 2400 0.278 122 1.833 43.7 0.321 54.8 0.177 - 84.0 2500 0.286 120 1.778 41.7 0.332 53.7 0.171 - 87.7 DI 2100 11 NOTICE 5. 6. 7. 8. 9. 10. 11. 12. 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