Technische Information / Technical Information
IGBT-Module
IGBT-Modules BYM 300 B 170 DN2
vorläufige Daten
preliminary data
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Sperrspannung der Diode
Diode rerverse voltage Tvj = 25°C VCES 1700 V
Dauergleichstrom
DC forward current TC = 80 °C IF300 A
Periodischer Spitzenstrom
repetitive peak forward current tp = 1 ms IFRM 600 A
Grenzlastintegral der Diode
I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t23,5 k A2s
Isolations-Prüfspannung
insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV
Charakteristische Werte / Characteristic values
Diode / Diode min. typ. max.
Durchlaßspannung IF = 300A, VGE = 0V, Tvj = 25°C - 2,2 2,6 V
forward voltage IF = 300A, VGE = 0V, Tvj = 125°C -2-V
Rückstromspitze IF = 300A, - diF/dt = 4500A/µs
peak reverse recovery current VR = 900V, VGE = -15V, Tvj = 25°C IRM - 220 - A
VR = 900V, VGE = -15V, Tvj = 125°C - 330 - A
Sperrverzögerungsladung IF = 300A, - diF/dt = 4500A/µs
recovered charge VR = 900V, VGE = -15V, Tvj = 25°C Qr- 34 - µAs
VR = 900V, VGE = -15V, Tvj = 125°C - 75 - µAs
Abschaltenergie pro Puls IF = 300A, - diF/dt = 4500A/µs
reverse recovery energy VR = 900V, VGE = -15V, Tvj = 25°C Erec - 16 - mWs
VR = 900V, VGE = -15V, Tvj = 125°C - 31 - mWs
prepared by: Alfons Wiesenthal date of publication: 2002-11-25
approved by: Christoph Lübke revision: 2.2
VF
1(4) DB_BYM300B170DN2_2.2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BYM 300 B 170 DN2
vorläufige Daten
preliminary data
Thermische Eigenschaften / Thermal properties min. typ. max.
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink pro Modul / per module
lPaste = 1 W/m*K / lgrease = 1 W/m*K RthCK - 0,012 - K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature Tvj max - - 150 °C
Betriebstemperatur
operation temperature Tvjop -40 - 125 °C
Lagertemperatur
storage temperature Tstg -40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation Al2O3
Kriechstrecke
creepage distance 20 mm
Luftstrecke
clearance 11 mm
CTI
comperative tracking index 425
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight G 340 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
Anschlüsse / terminals M6
M-Nm
Nm-M
Schraube / screw M6 3 6
K/WDiode/Diode, DC RthJC --
25
0,120
2(4) DB_BYM300B170DN2_2.2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BYM 300 B 170 DN2 vorläufige Daten
preliminary data
IF [A]
VF [V]
Ü
0
50
100
150
200
250
300
350
400
450
500
550
600
0,0 0,5 1,0 1,5 2,0 2,5 3,0
Tvj = 25°C
Tvj = 125°C
Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF)
Forward characteristic of inverse diode (typical)
3(4) DB_BYM300B170DN2_2.2.xls
Technische Information / Technical Information
BYM 300 B 170 DN2
vorläufige Daten
preliminary data
4(4) DB_BYM300B170DN2_2.2.xls
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