T4-LDS-0248, Rev. 1 (120182) ©2012 Microsemi Corporation Page 1 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
Available on
commercial
versions
SURFA CE MOUNT TRANSIE NT
VOLTAGE SUPPRESSORS
DESCRIPTION
Microsemi’s new Powermite UPT series of tr a ns ien t v ol tag e s up p r es sor s fe ature o xide-passivated
chips with high-tem p eratur e sol der bonds for high surge capability and negligible electrical
degrada tion under repeated surge conditions . Both unidirect ional and bidirect i onal confi gurations
ar e avai l ab le. In addition to its size advantages, the Powermite package includes a fully metallic
bottom (cathode) side t ha t el i m i na t e s the possibil i ty of so l der flux entrapm ent at as sembly an d a
unique locking tab serves as an integral heat sink. Its innov ative design m akes this device fully
compatible f or use wi t h aut oma ti c ins er tion eq ui p m ent. Microsemi also offers numerous other
products to meet higher and lower power voltage regulation applications.
DO-216AA
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Powermite package with standoff voltages 5 to 48 V.
• Both unidirectional and bidirectional polarities:
-Anode to case bottom (UPT5e3 thru UPT48e3)
-Cathode to case bottom (UPT5Re3 thru UPT48Re3)
-Bidirectional (UPTB8e3 thru UPTB48e3)
• Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional
version.
• Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
• RoHS compliant versions available.
APPLICAT IONS / BENE FITS
• Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
• Protection from switching and induced R F transients.
• New improved lower leakage current for the UPT5Re3:
-Integral heat sink / locking tabs
-Fully metallic bottom side eliminates flux entrapment
• Compliant to IE C61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
• Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: UPT5//UPT5R/UPTB8 to17
Class 2: UPT5//UPT5R/UPTB8 to12
MAXIMUM RAT INGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature TJ /
TSTG
-65 to +150
o
C
Thermal Resistance Junction-to-Ambient (1)
RӨJA
240
oC/W
Thermal Resistance Junction-to-Case (base tab)
RӨJC
15
oC/W
Peak Pulse Power (see Figure 1 and Figure 2)
@10/1000µs
UPT5Re3:
UPT5e3 thru UPT48e3:
UPT8Re3 thru UPT48Re3:
UPTB 8e3 thru UPTB48e3:
PPP 600
1000
1000
100
150
150
150
W
Steady-State Power Dissipation
(base tab < 112
o
C)
PD 2.5 W
Impulse Repetition Rate (duty factor)
0.01
%
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. When mounted on FR4 PC board with 1 oz copper.
T4-LDS-0248, Rev. 1 (120182) ©2012 Microsemi Corporation Page 2 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
M ECHANICAL and PACKAGI NG
• CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0.
• TERMINALS: Annealed matte-tin plating over copper and readily solderable per MIL-STD-750, method 2026.
• MARKING:
Anode to TAB 1: T pl us the last two digits of part num ber, e.g. UPT5e3 is T05▪, UPT12e3 is T12▪
Cathode to TAB1: U plus las t two digits of part number, e.g. UPT5Re3 is U05▪, UPT12Re3 is U12▪
Bipolar: B plus the last two digits of part number, e.g. UPTB8e3 is B08▪, UPTB12e3 is B12▪, etc.
Please note dot suffix (for e3 suffix)
• POLARITY: Cathode or anode to TAB 1 (bottom) as described in marking below and last page.
• TAPE & REEL option: Standard per EIA-481-B using 12 mm tape. Consult factory for quantities.
• WEIGHT: 0.016 gram (approximate).
• See Package Dimensions on last page.
PART NOME NCL ATURE
Applicable to UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3 only:
UPT 5 R (e3)
Powermite
Rated Standoff
Voltage
RoHS Compl iance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Polarity
Blank = Anode to Case Bottom
R = Cathode to Case Bottom
Applicable to UPTB8e3 – UPTB4 8 e3 onl y:
UPT B 5 (e3)
Powermite
Bi-directional
RoHS Compl iance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Rated Standoff Voltage
SYMBOL S & DEFI NITIONS
Symbol
Definition
V(BR)
Breakdown Voltage: The minim um vol tage the device will exhibit at a specified current.
VWM
Wor king Peak Standoff Voltage: The maximum peak vol tage that can be applied over the operating temperature
range.
PPP
Peak Pulse Power: The peak power that can be applied for a specified puls e width and waveform.
ID
Standby Current: The maximum current that will flow at the specified voltage and temperature.
IPP
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
C
Capacitance: The c apacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
T4-LDS-0248, Rev. 1 (120182) ©2012 Microsemi Corporation Page 3 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
ELECTRI CAL CHARACTERISTI CS
DEVICE TYPE
(add e3 suffix)
RATED
STANDOFF
VOLTAGE
VWM
MINIMUM
BREAKDOWN
VOLTAGE
V(BR) @ 1 mA
MAXIMUM
STANDBY
CURRENT
ID @ VWM
MAXIMUM
PEAK PULSE
CURRENT*
IPP @ 8/20
µ
s
MAXIMUM
CLAMPING
VOLTAGE
VC @ 10A*
MAXIMUM
TEMPERATURE
COEFFICIENT
of V(BR)
αV(BR)
Unidirectional
Bi-directional
V
V
µA
A
V
%/oC
UPT5
5
6.0
50
89.4
9.5
.030
UPT5R
5
6.0
5
60
9.5
.030
UPT8 & U PT8R
UPTB8
8
9.0
2
62.1
13.7
.040
UPT10 & UPT10R
UPTB10
10
11.0
2
47.2
18.0
.045
UPT12 &UPT12R
UPTB12
12
13.8
1
40.3
21.6
.050
UPT15 & UPT15R
UPTB15
15
16.7
1
33.9
26.0
.055
UPT17 & UPT17R
UPTB17
17
19.0
1
30.8
29.2
.060
UPT24 & UPT24R
UPTB24
24
28.4
1
22.0
43.2
.070
UPT28 &UPT28R
UPTB28
28
31.0
1
19.2
47.8
.075
UPT33 &UPT33R
UPTB33
33
36.8
1
16.4
56.7
.080
UPT48 &UPT48R
UPTB48
48
54.0
1
11.2
84.3
.090
* See Figure 1 for IPP waveform of 8/20 µs.
T4-LDS-0248, Rev. 1 (120182) ©2012 Microsemi Corporation Page 4 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
GRAPHS
t – TIME – (µs) tp – PULSE TIME
FIGURE 1 FIGURE 2
Pulse Waveform for 8/20 µs Exp onential Su r ge P eak P ulse Power vs. P ulse Duration
TEMPERATURE – (oC) VWM – STAND-OFF VOLTAGE – (V)
FIGURE 3 FIGURE 4
Derating Curve Typ i cal Capac i tance vs. Stand-Off Volt a ge
lP – PULSE CURRENT – (% of IPP)
PPP – PEAK PULSE POWER – (W)
tp: Pulse time duration is defined as
that point where
the pulse current
decays to 50% of IPP.
(Rise time to 100% of IPP = 8µs.)
EXPONENTIAL PULSE
(Pulse time duration is defined as
that point where the pulse current
decays to 50% of IPP.)
CAPACITANCE – (pF)
PPP – PEAK PULSE POWER – (% OF 25oC RATING)
measured at zero bias
measured at VWM
T4-LDS-0248, Rev. 1 (120182) ©2012 Microsemi Corporation Page 5 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
PACKAGE DIM ENSIONS
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
0.73
0.99
0.029
0.039
B
0.40
0.66
0.016
0.026
C
1.77
2.03
0.070
0.080
D
2.21
2.46
0.087
0.097
E
0.50
0.76
0.020
0.030
F
1.29
1.54
0.051
0.061
G
0.53
0.78
0.021
0.031
H
0.10
0.20
0.004
0.008
I
1.77
2.03
0.070
0.080
J
0.89
1.14
0.035
0.045
PAD LAYOUT
Dimensions
Ltr
Inch
Millimeters
A
0.100
2.54
B
0.105
2.67
C
0.050
1.27
D
0.030
0.76
E
0.025
0.64