4-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSL923A0D, FSL923A0R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -200 V
Drain to Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR -200 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID5A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID3A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 15 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT25 W
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T10 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . .IAS 15 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS5A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISM 15 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V -200 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS,
ID = 1mA TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V
Zero Gate Voltage Drain Current IDSS VDS = 160V,
VGS = 0V TC = 25oC--25µA
TC = 125oC - - 250 µA
Gate to Source Leakage Current IGSS VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage VDS(ON) VGS = -12V, ID = 5A - - -3.70 V
Drain to Source On Resistance rDS(ON)12 ID = 3A,
VGS = -12V TC = 25oC - 0.560 0.670 Ω
TC = 125oC - - 1.20 Ω
Turn-On Delay Time td(ON) VDD = -100V, ID = 5A,
RL = 20Ω, VGS = -12V,
RGS = 7.5Ω
- - 30 ns
Rise Time tr- - 30 ns
Turn-Off Delay Time td(OFF) - - 60 ns
Fall Time tf- - 35 ns
Total Gate Charge Qg(TOT) VGS = 0V to -20V VDD = -100V,
ID = 5A - - 60 nC
Gate Charge at 12V Qg(12) VGS = 0V to -12V - 36 40 nC
Threshold Gate Charge Qg(TH) VGS = 0V to -2V - - 2.4 nC
Gate Charge Source Qgs - 6.0 7.6 nC
Gate Charge Drain Qgd -1618nC
Plateau Voltage V(PLATEAU) ID = 5A, VDS = -15V - -6 - V
Input Capacitance CISS VDS = -25V, VGS = 0V,
f = 1MHz - 890 - pF
Output Capacitance COSS - 200 - pF
Reverse Transfer Capacitance CRSS -55-pF
Thermal Resistance Junction to Case RθJC --5
oC/W
Thermal Resistance Junction to Ambient RθJA - - 175 oC/W
FSL923A0D, FSL923A0R