UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R221-010,A
GENERAL PURPOSE TRANSISTOR
FEATURES
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
MARKING
SOT-523
12
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 7 V
Collector Current Ic 0.15 A
Collector Power Dissipation Pc 0.15 W
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Breakdown Voltage BVCBO Ic= 50μA 60 V
Collector Emitter Breakdown Voltage BVCEO Ic= 1mA 50 V
Emitter-base Breakdown Voltage BVEBO IE=50μA 7 V
Collector Cut-Off Current ICBO VCB=60V 0.1
μA
Emitter Cut-Off Current IEBO VEB= 7V 0.1 μA
DC Current Transfer Ratio hFE VCE=6V,Ic=1mA 120 560
Collector-Emitter Saturation Voltage VCE(sat) Ic=50mA, IB=5mA 0.4 V
Transition Frequency fT VCE=12V, IE= -2mA, f=100MHz 180 MHz
Output Capacitance Cob VCE= 12V, IE= 0A, f=1MHz 2 3.5 pF
CLASSIFICATION OF hFE
RANK Q R S
RANGE 120 ~ 270 180 ~ 390 270 ~ 560
C5
UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R221-010,A
ELECTRICAL CHARACTERISTICS CURVES
0.45mA
BASE TO EMITTER VOLTAGE, VBE (V)
0 0.6 1.0 1.2 1.6
COLLECTOR CURRENT, IC (mA)
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
80
0 0.8 1.2 1.6
20
50
COLLECTOR CURRENT, IC (mA)
100
40
0.4 2.0
Grounded emitter propagation characteristics
20
10
2
0.5
5
1
0.2
0.1
0.2 0.4 0.8 1.4
VCE = 6V
60
0
Ta = 25℃
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB = 0A
Grounded emitter output characteristics (Ι)
DC CURRENT GAIN, hFE
COLLECTOR CURRENT, IC (mA)
200
0.2 5 10 60
20
500
50
0.5 200
100
10
DC current gain vs. collector current (Ι)
Ta = 25℃
VCC = 5V
3V
1V
1 2 20 100
COLLECTOR SATURATION
VOLTAGE, VCE(sat) (V)
COLLECTOR CURRENT, IC (mA)
0.2
0.2 5 10 50
0.02
0.5
0.05
0.5 200
0.1
0.01
Collector-emitter saturation voltage vs.
collector current
Ta = 25℃
IC/IB = 5V
12 20
DC CURRENT GAIN, hFE
COLLECTOR CURRENT, IC (mA)
200
0.2 5 10 60
20
500
50
0.5 200
100
10
DC current gain vs. collector current (Ⅱ)
1 2 20 100
VCC = 5V
Ta = 100℃
25℃
-55℃
100
20
10
Ta=100℃
25℃
55℃
0.50mA
COLLECTOR CURRENT, IC (mA)
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
8
0 8 12 16
2
10
4
420
6
0
Ta = 25℃
3μA
IB = 0A
Grounded emitter output characteristics (Ⅱ)
6μA
9μA
12μA
15μA
18μA
21μA
24μA
27μA
30μA
UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R221-010,A
COLLECTOR SATURATION
VOLTAGE, VCE(sat) (V)
COLLECTOR CURRENT, I C (mA)
0.2
0.2 5 10
0.02
0.5
0.05
0.5 100
0.1
0.01
12 20
COLLECTOR CURRENT, I C (mA)
0.2
0.2 5 10 50
0.02
0.5
0.05
0.5 200
0.1
0.01
Collector-emitter saturation voltage vs.
collector current (Ι)
1 2 20 100
Ta = 100℃
25℃
50
-55℃
IC/IB = 10
COLLECTOR SATURATION
VOLTAGE, VCE(sat) (V)
Ta = 100℃
25℃
-55℃
IC/IB = 50
Collector-emitter saturation voltage vs.
collector current (Ⅱ)
COLLECTOR CURRENT, IE (mA)
500
-0.5 -5 -10
100
200
-1 -100
50
Gain bandwidth product vs. emitter current
-2 -20 -50
TRANSITION FREQUENCY, fT (MHz)
Ta = 25℃
VCE =6V
10
0.2 510 50
2
20
0.5
5
1
1220
Ta=25℃
f=1MHz
IE=0A
IC=0A
Cib
Cob
COLLECTOR TO BASE VOLTAGE , VCB (V)
EMITTER TO BASE VOLTAGE , VEB (V)
Collector output capacitance vs. collector-base voltage
Emitter input capacitance vs. emitter-base voltage
COLLECTOR OUTPUT CAPACITANCE, Cob (pF)
EMITTER INPUT CAPACITANCE, Cib (pF)
100
-0.2 -5 -10
20
200
-0.5
50
10
-1 -2
Ta=25℃
f=32MHZ
VCB=6V
Base-collector time constant
vs. emitter current
EMITTER CURRENT, IE (mA)
BASE COLLECTOR TIME CONSTANT,
Cc'rbb' (ps)
UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 4
QW-R221-010,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
