SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – MARCH 2001
PARTMARKING DETAILS
BC80716 – 5AZ
BC80725 – 5BZ
BC80740 – 5CZ
COMPLEMENTARY TYPE BC817
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -1 A
Continuous Collector Current IC-500 mA
Base Current IB-100 mA
Peak Base Current IBM -200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current ICBO -0.1
-0.5 µAVCB
=-20V, IE=0
VCB
=-20V, IE=0, Tamb
=150°C
Emitter Cut-Off Current IEBO -10 µAVEB=-5V, IC=0
Collector-Emitter
Saturation Voltage VCE(sat) -700 mV IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage VBE(on) -1.2 V IC=-500mA, VCE=-1V*
Static Forward Current
Transfer Ratio hFE
BC80716 100 250 IC=-100mA, VCE=-1V*
BC80725 160 400 IC=-100mA, VCE=-1V*
BC80740 250 600 IC=-100mA, VCE=-1V*
All bands 40 IC=-500mA, VCE=-1V*
Transition Frequency fT100 MHz IC=-10mA, VCE=-5V
f=35MHz
Output Capacitance Cobo 8.0 pF VCB
=-10V f=1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
BC807
C
B
E
SOT23
tba
