Features
n RoHS compliant*
n Surface Mount SMC package
n Standoff Voltage: 5.0 to 495 volts
n Power Dissipation: 1500 watts
Applications
n IEC 61000-4-2 ESD (Min. Level 4)
n IEC 61000-4-4 EFT
n IEC 61000-4-5 Surge
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
SMCJ Transient Voltage Suppressor Diode Series
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Parameter Symbol Value Unit
Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) PPK 1500 Watts
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
IFSM 200 Amps
Steady State Power Dissipation @ TL = 75 °C PM(AV) 5.0 Watts
Maximum Instantaneous Forward Voltage @ IPP = 100 A
(For Unidirectional Units Only)
SMCJ5.0A ~ SMCJ90A
SMCJ100A ~ SMCJ495A VF
3.5
5.0 Volts
Operating Temperature Range TJ-55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
2. Thermal Resistance Junction to Lead.
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown
Voltage up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for
bidirectional devices from 0 V to Minimum Breakdown Voltage.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their at conguration
minimizes roll away.
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
Asia-Pacic:
Tel: +886-2 2562-4117
Email: asiacus@bourns.com
Europe:
Tel: +36 88 520 390
Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500
Email: americus@bourns.com
www.bourns.com
How to Order
SMCJ 5.0 CA - H
Package
SMCJ = SMC/DO-214AB
Working Peak Reverse Voltage
5.0 = 5.0 VRWM (Volts)
Sufx
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
Reel
(blank) = 13 inch reel
-H = 7 inch reel
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
SMCJ Transient Voltage Suppressor Diode Series
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Notes:
1. Sufx ‘A’ denotes a 5 % tolerance unidirectional device. 3. For bidirectional devices with a VR of 10 volts or less, the IR limit is double.
2. Sufx ‘CA’ denotes a 5 % tolerance bidirectional device.
Unidirectional Device Bidirectional Device Breakdown Voltage
VBR (Volts)
Working Peak
Reverse
Voltage
Maximum
Reverse
Leakage
@ VRWM
Maximum
Reverse
Voltage
@ IRSM
Maximum
Reverse
Surge
Current
Part No. Marking Part No. Marking Min. Max. @ IT (mA) VRWM (V) IR (μA) VRSM (V) IRSM (A)
SMCJ5.0A GDE SMCJ5.0CA BDE 6.40 7.00 10 5 800 9.2 163
SMCJ6.0A GDG SMCJ6.0CA BDG 6.67 7.37 10 6 800 10.3 145.7
SMCJ6.5A GDK SMCJ6.5CA BDK 7.22 7.98 10 6.5 500 11.2 134
SMCJ7.0A GDM SMCJ7.0CA BDM 7.78 8.60 10 7 200 12 125
SMCJ7.5A GDP SMCJ7.5CA BDP 8.33 9.21 1 7.5 100 12.9 116.3
SMCJ8.0A GDR SMCJ8.0CA BDR 8.89 9.83 1 8 50 13.6 110.3
SMCJ8.5A GDT SMCJ8.5CA BDT 9.44 10.4 1 8.5 20 14.4 104.2
SMCJ9.0A GDV SMCJ9.0CA BDV 10.0 11.1 1 9 10 15.4 97.4
SMCJ10A GDX SMCJ10CA BDX 11.1 12.3 1 10 5 17 88.3
SMCJ11A GDZ SMCJ11CA BDZ 12.2 13.5 1 11 1 18.2 82.5
SMCJ12A GEE SMCJ12CA BEE 13.3 14.7 1 12 1 19.9 75.4
SMCJ13A GEG SMCJ13CA BEG 14.4 15.9 1 13 1 21.5 69.8
SMCJ14A GEK SMCJ14CA BEK 15.6 17.2 1 14 1 23.2 64.7
SMCJ15A GEM SMCJ15CA BEM 16.7 18.5 1 15 1 24.4 61.5
SMCJ16A GEP SMCJ16CA BEP 17.8 19.7 1 16 1 26 57.7
SMCJ17A GER SMCJ17CA BER 18.9 20.9 1 17 1 27.6 54.4
SMCJ18A GET SMCJ18CA BET 20.0 22.1 1 18 1 29.2 51.4
SMCJ20A GEV SMCJ20CA BEV 22.2 24.5 1 20 1 32.4 46.3
SMCJ22A GEX SMCJ22CA BEX 24.4 26.9 1 22 1 35.5 42.3
SMCJ24A GEZ SMCJ24CA BEZ 26.7 29.5 1 24 1 38.9 38.6
SMCJ26A GFE SMCJ26CA BFE 28.9 31.9 1 26 1 42.1 35.7
SMCJ28A GFG SMCJ28CA BFG 31.1 34.4 1 28 1 45.4 33.1
SMCJ30A GFK SMCJ30CA BFK 33.3 36.8 1 30 1 48.4 31
SMCJ33A GFM SMCJ33CA BFM 36.7 40.6 1 33 1 53.3 28.1
SMCJ36A GFP SMCJ36CA BFP 40 44.2 1 36 1 58.1 25.9
SMCJ40A GFR SMCJ40CA BFR 44.4 49.1 1 40 1 64.5 23.3
SMCJ43A GFT SMCJ43CA BFT 47.8 52.8 1 43 1 69.4 21.7
SMCJ45A GFV SMCJ45CA BFV 50 55.3 1 45 1 72.7 20.6
SMCJ48A GFX SMCJ48CA BFX 53.3 58.9 1 48 1 77.4 19.4
SMCJ51A GFZ SMCJ51CA BFZ 56.7 62.7 1 51 1 82.4 18.2
SMCJ54A GGE SMCJ54CA BGE 60 66.3 1 54 1 87.1 17.3
SMCJ58A GGG SMCJ58CA BGG 64.4 71.2 1 58 1 93.6 16.1
SMCJ60A GGK SMCJ60CA BGK 66.7 73.7 1 60 1 96.8 15.5
SMCJ64A GGM SMCJ64CA BGM 71.1 78.6 1 64 1 103 14.6
SMCJ70A GGP SMCJ70CA BGP 77.8 86.0 1 70 1 113 13.3
SMCJ75A GGR SMCJ75CA BGR 83.3 92.1 1 75 1 121 12.4
SMCJ78A GGT SMCJ78CA BGT 86.7 95.8 1 78 1 126 11.9
SMCJ85A GGV SMCJ85CA BGV 94.4 104 1 85 1 137 11
SMCJ90A GGX SMCJ90CA BGX 100 111 1 90 1 146 10.3
SMCJ100A GGZ SMCJ100CA BGZ 111 123 1 100 1 162 9.3
SMCJ110A GHE SMCJ110CA BHE 122 135 1 110 1 177 8.4
SMCJ120A GHG SMCJ120CA BHG 133 147 1 120 1 193 7.9
SMCJ130A GHK SMCJ130CA BHK 144 159 1 130 1 209 7.2
SMCJ150A GHM SMCJ150CA BHM 167 185 1 150 1 243 6.2
SMCJ160A GHP SMCJ160CA BHP 178 197 1 160 1 259 5.8
SMCJ170A GHR SMCJ170CA BHR 189 209 1 170 1 275 5.5
SMCJ180A GHT SMCJ180CA BHT 201 222 1 180 1 292 5.1
SMCJ200A GHV SMCJ200CA BHV 224 247 1 200 1 324 4.6
SMCJ220A GHX SMCJ220CA BHX 246 272 1 220 1 356 4.2
SMCJ250A GHZ SMCJ250CA BHZ 279 309 1 250 1 405 3.7
SMCJ300A GJE SMCJ300CA BJE 335 371 1 300 1 486 3.1
SMCJ350A GJG SMCJ350CA BJG 391 432 1 350 1 567 2.6
SMCJ400A GJK SMCJ400CA BJK 447 494 1 400 1 648 2.3
SMCJ408A 408A SMCJ408CA 408CA 456 504 1 408 1 658 2.3
SMCJ440A GJM SMCJ440CA BJM 492 543 1 440 1 713 2.1
SMCJ495A 495A SMCJ495CA 495CA 522.5 577.5 1 495 1 760 2.0
Product Dimensions
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
SMCJ Transient Voltage Suppressor Diode Series
Recommended Footprint
Physical Specications
Case ...........................................Molded plastic per UL Class 94V-0
Polarity....................... Cathode band indicates unidirectional device
No cathode band indicates bidirectional device
Weight .............................................................................0.21 grams
DIMENSIONS: MM
(INCHES)
A
C
B
G
F D
C
B
MM
(INCHES)
DIMENSIONS:
H
E
A
A
A
C
C
F
E
B
B
D
MM
(INCHES)
DIMENSIONS:
Dimension SMC (DO-214AB)
A6.60 - 7.11
(0.260 - 0.280)
B5.59 - 6.22
(0.220 - 0.245)
C2.90 - 3.20
(0.115 - 0.125)
D0.15 - 0.31
(0.006 - 0.112)
E7.75 - 8.13
(0.305 - 0.320)
F 0.05 - 0.202
(0.002 - 0.008)
G 2.00 - 2.62
(0.079 - 0.103)
H 0.76 - 1.52
(0.030 - 0.060)
DIMENSIONS: MM
(INCHES)
Dimension SMC (DO-214AB)
A (Max.) 4.69
(0.185)
B (Min.) 3.07
(0.121)
C (Min.) 1.52
(0.060)
SMCJ Transient Voltage Suppressor Diode Series
Rating & Characteristic Curves
Pulse Derating Curve Maximum Non-Repetitive Surge Current
Pulse Waveform Typical Junction Capacitance
Pulse Rating Curve Steady State Power Derating Curve
100
75
50
25
0
050
25 75 100 150125 175 200
Ambient Temperature (
Peak Pulse Derating in Percent of
Peak Power or Current
°C)
10 x 1000 Waveform as Defined
by R.E.A.
5.0
3.0
4.0
2.0
1.0
0.0
05025 75 100 150125 175 200
TL, Lead Temperature (°C)
RM(AV) Steady State Power Dissipation (W)
60 Hz Resistive or
Inductive Load
100
50
0
0 1.0 2.0 3.0 4.0
T, Time (ms)
IP, Peak Pulse Current (%)
TA=25 °C
TP
TR=10 µs
Half value= IRSM
2
Peak value (IRSM)
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
Peak Forward Surge Current (Amps)
100
200
10
12510 20 50 100
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
Capacitance (pF)
10000
100
0
010 100 1000
Standoff Voltage (Volts)
1000
Bidirectional
TA = 25 °C
Unidirectional
100
1.0
10
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
TP, Pulse Width
PP, Peak Power (KW)
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
8.0 mm Lead Areas
100
75
50
25
0
05025 75 100 150125 175 200
Ambient Temperature (
Peak Pulse Derating in Percent of
Peak Power or Current
°C)
10 x 1000 Waveform as Defined
by R.E.A.
5.0
3.0
4.0
2.0
1.0
0.0
05025 75 100 150125 175 200
TL, Lead Temperature (°C)
RM(AV) Steady State Power Dissipation (W)
60 Hz Resistive or
Inductive Load
100
50
0
0 1.0 2.0 3.0 4.0
T, Time (ms)
IP, Peak Pulse Current (%)
TA=25 °C
TP
TR=10 µs
Half value= IRSM
2
Peak value (IRSM)
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
Peak Forward Surge Current (Amps)
100
200
10
12510 20 50 100
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
Capacitance (pF)
10000
100
0
010 100 1000
Standoff Voltage (Volts)
1000
Bidirectional
TA = 25 °C
Unidirectional
100
1.0
10
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
TP, Pulse Width
PP, Peak Power (KW)
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
8.0 mm Lead Areas
100
75
50
25
0
05025 75 100 150125 175 200
Ambient Temperature (
Peak Pulse Derating in Percent of
Peak Power or Current
°C)
10 x 1000 Waveform as Defined
by R.E.A.
5.0
3.0
4.0
2.0
1.0
0.0
05025 75 100 150125 175 200
TL, Lead Temperature (°C)
RM(AV) Steady State Power Dissipation (W)
60 Hz Resistive or
Inductive Load
100
50
0
0 1.0 2.0 3.0 4.0
T, Time (ms)
IP, Peak Pulse Current (%)
TA=25 °C
TP
TR=10 µs
Half value= IRSM
2
Peak value (IRSM)
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
Peak Forward Surge Current (Amps)
100
200
10
12510 20 50 100
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
Capacitance (pF)
10000
100
0
010 100 1000
Standoff Voltage (Volts)
1000
Bidirectional
TA = 25 °C
Unidirectional
100
1.0
10
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
TP, Pulse Width
PP, Peak Power (KW)
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
8.0 mm Lead Areas
100
75
50
25
0
05025 75 100 150125 175 200
Ambient Temperature (
Peak Pulse Derating in Percent of
Peak Power or Current
°C)
10 x 1000 Waveform as Defined
by R.E.A.
5.0
3.0
4.0
2.0
1.0
0.0
05025 75 100 150125 175 200
TL, Lead Temperature (°C)
RM(AV) Steady State Power Dissipation (W)
60 Hz Resistive or
Inductive Load
100
50
0
0 1.0 2.0 3.0 4.0
T, Time (ms)
IP, Peak Pulse Current (%)
TA=25 °C
TP
TR=10 µs
Half value= IRSM
2
Peak value (IRSM)
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
Peak Forward Surge Current (Amps)
100
200
10
12510 20 50 100
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
Capacitance (pF)
10000
100
0
010 100 1000
Standoff Voltage (Volts)
1000
Bidirectional
TA = 25 °C
Unidirectional
100
1.0
10
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
TP, Pulse Width
PP, Peak Power (KW)
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
8.0 mm Lead Areas
100
75
50
25
0
05025 75 100 150125 175 200
Ambient Temperature (
Peak Pulse Derating in Percent of
Peak Power or Current
°C)
10 x 1000 Waveform as Defined
by R.E.A.
5.0
3.0
4.0
2.0
1.0
0.0
050
25 75 100 150125 175 200
TL, Lead Temperature (°C)
RM(AV) Steady State Power Dissipation (W)
60 Hz Resistive or
Inductive Load
100
50
0
0 1.0 2.0 3.0 4.0
T, Time (ms)
IP, Peak Pulse Current (%)
TA=25 °C
TP
TR=10 µs
Half value= IRSM
2
Peak value (IRSM)
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
Peak Forward Surge Current (Amps)
100
200
10
12510 20 50 100
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
Capacitance (pF)
10000
100
0
010 100 1000
Standoff Voltage (Volts)
1000
Bidirectional
TA = 25 °C
Unidirectional
100
1.0
10
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
TP, Pulse Width
PP, Peak Power (KW)
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
8.0 mm Lead Areas
100
10
1.0
0.1
0.1 µs 1.0 µs 10 µs 10 ms
TP, Pulse Width
PP, Peak Power (KW)
100 µs 1.0 ms
5.0 mm Lead Areas
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN5-0504N - TVS/Steering Diode Array
Packaging Information
.......
.......
....... ..............
....... ..............
PA
F
ET
120 °
D2
DD
1
W1
C
Index Hole
P
0
P
1
W
B
10 pitches (min.)
Direction of Feed
10 pitches (min.)
End
Trailer Device Leader
Start
d
The product will be dispensed in tape and reel format (see diagram below).
Devices are packed in accordance with EIA standard
RS-481-A and specications shown here.
DIMENSIONS: MM
(INCHES)
Item Symbol SMC (DO-214AB)
7 Inch Reel 13 Inch Reel
Carrier Width A 6.0 ± 2.0
(0.236 - 0.079)
Carrier Length B 8.3 ± 0.20
(0.327 ± 0.008)
Carrier Depth C 2.5 ± 0.20
(0.098 ± 0.008)
Sprocket Hole d 1.50 ± 0.10
(0.059 ± 0.004)
Reel Outside Diameter D 178
(7.008)
330
(12.992)
Reel Inner Diameter D1 50.0
(1.969) MIN.
Feed Hole Diameter D2 13.0 +0.50/-0.20
(0.512 +0.020/-0.008)
Sprocket Hole Position E 1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position F 7.50 ± 0.10
(0.295 ± 0.004)
Punch Hole Pitch P 8.00 ± 0.10
(0.315 ± 0.004)
Sprocket Hole Pitch P0 4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center P1 2.00 ± 0.10
(0.079 ± 0.004)
Overall Tape Thickness T0.30 ± 0.10
(0.012 ± 0.004)
Tape Width W 16.00 ± 0.30
(0.630 ± 0.012)
Reel Width W122.4
(0.882) MAX.
Quantity per Reel -- 500 3,000
REV. 06/16
SMCJ Transient Voltage Suppressor Diode Series
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.