Standard Power MOSFETs 2N6786 File Number 2207 N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE DB 1.25 A, 400 V fos(on): 3.6.9 TTT Features: G = SOA is power-dissipation limited = Nanosecond switching speeds = Linear transfer characteristics $ High input impedance 9208-43357 Majority carrier device TERMINAL DIAGRAM The 2N6786 is an n-channel enhancement-mode silicon- TERMINAL DESIGNATION gate power MOS field-effect transistor designed for applications such as switching regulators, switching . . < GATE converters, motor drivers, relay drivers, and drivers for SOURCE . high-power bipolar switching transistors requiring high speed and low gate-drive power. This type can be operated directly from an integrated circuit. @ The 2N6786 is supplied in the JEDEC TO-205AF (Low- DRAIN Profile TO-39) metai package. (case) JEDEC TO-205AF MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): *DRAIN-SOURCE VOLTAGE, Vos .........-+ EAPO EEE PDR AD OBER EASE ED ROLE EE EEE S AERO E EAD NEEDS Aaa Dee ORE DEES b Eee E ene DRAIN-GATE VOLTAGE (Res = 20 kQ), Voor . "GATE-SOURCE VOLTAGE, Vas ...... 0. cc cece ene eee en ee Een NERC OEE E SEED EEE PEER EERE CEE EEE EE EEE Ea EE EES DRAIN CURRENT: RMS Continuous, Ip Fa, R20 125A At Tc = 100C .. Dad Oo A (+) Yaa 5.5 A "SOURCE CURRENT: COMINUOUS, Is... eee ne Ee EEE EEE EEE LEER EEA E EE EEE EERE RET EE EEE ED EEE EE EEE EEE EER EEE EEE 1.25 A PUISOG, I5m ee ee eee ne een EEE EE EERE REECE EE HERRERO E EERE EEE ESSE EEE ETERS PEED EEE REESE EE EEE 5.5 A POWER DISSIPATION, Pr: CX 0-2 a 2 15 W ABOVE Te = 25C. cece ee ee ee eee eee En OEE EEE SCE EEE Ree e EERE RSE E EEE ED EEE ER EEE D EES Derate linearly 0.12 W/C INDUCTIVE CURRENT, Clamped (L = 100 gt), fim... ccc eee cere en ene ne cnet eee nent erent Eerste Een eet eeenees 5.5A OPERATING AND STORAGE TEMPERATURE, Ty, Tetg. 002s cece cece cece cece te center e tne eee e teen eee E EE Eta ene EE -55 to +150C *LEAD TEMPERATURE, TL: At distances 0.063 in. (1.6 mm) trom seating plane for 10S Max. occ ccc cect cece tenn tent n en te ete e sees t teense | O09 CG In accordance with JEDEC registration data. 3-514Standard Power MOSFETs 2N6786 ELECTRICAL CHARACTERISTICS at T.; = 25C (Uniess Otherwise Specified) | LIMITS CHARACTERISTIC TEST CONDITIONS Min. |Typ. Max. UNITS Drain-Source Breakdown Voltage BVoss Vas = 0 V, In = 0.25 mA 400*| | v Gate Threshold Voltage Vas(th) Vas = Vos, Ip = 0.5 mA 2.0 | |4.0 Gate-Source Leakage Forward lass Ves = 20 V, Vos = 0V | 100 nA Gate-Source Leakage Reverse loss Vas = -20 V, Vos = 0 V | |100 . Vos = 400 V, Vas = 0 V | [250 A Zero-Gate Voltage Drain Current loss Vos = 320V, Ves =0V, Te= 128C | | fooo| On-State Voltage Vos(on) Vas = 10 V, ln = 1.25A | {45 Vv . Ves = 10 V, lo = 0.8 A, Ta = 25C |3.3 [3.6 - - " - : a2 Static Drain-Source On-State Resistance tos(on) Ves 2 10V.lo=08AT. 2 125C | 1 Von Diode Forward Voltage Vso Te = 25C, Is =1.25A,Vas=OV {0.6| | 1.4 v Forward Transconductance Ore Vos = 5 V, lo =0.8A 0.7* | 1.2 $2.1 | SU) Input Capacitance Css Ves = OV, Vos = 25V,f=1MHz | 60* | 135 |200 Output Capacitance Coss See Fig. 10 15* | 35 | 50* pF Reverse Transfer Capacitance Cree 2* 8 | 15* Turn-On Delay Time ta(on) Voo = 170 V, ln = 0.8 A, Zo=50Q | | | 18" Rise Time te See Fig. 15. (MOSFET switching | | | 20 ns Turn-Of Delay Time ta(off) times are essentially independent | | { 35" Fall Time tr of operating temperature.) | {30 ; Vos = 200 V, to = 75 mA, See Fig. 16.) 15 | | Safe Operating Area SOA _TVos = 12V, In = 1.25 A, See Fig. 16 115|-]]| THERMAL RESISTANCE Junction-to-Case Rac | [e.33*| , c/w Junction-to-Ambient Raa Free Air Operation | [175 SOURCE-DRAIN DIODE SWITCHING CHARACTERISTICS (TYPICAL) Reverse Recovery Time te 3=150C, le=1.25 A, dir/dt=100 A/ps 380 ns Reverse Recovered Charge Qra iTy=150C, Ip=1.25 A, dir/dt=100 A/ps 2.7 uC . . Intrinsic turn-on time is negligible. Turn-on speed is Forward Turn-On Time ton substantially controlied by Ls + Lo. *JEDEC registered value. Pulse Test: Pulse width < 300 ys, duty cycle < 2%. 80 ps PULSE TEST Vos > !pjon) * Fos(on max) a a w w & & 2 = = < =< e = 5 & = 5 5 oO Vv. z z z = a a 4 20 40 60 80 100 1 0 2 4 6 8 10 12 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vag. GATE-TO-SOURCE VOLTAGE (VOLTS) 92GS-44120 9268-44121 Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. 3-515Standard Power MOSFETs 2N6786 a wi 4 us a = = bE z i c 3 Zz < a 8 a z w = w a w o z < r 9 > a z 3 3 F a 3-516 80 ws PULSE TEST 5 4v 0 5 1 25 30 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9268-44122 Fig. 3 - Typical saturation characteristics. E a z Hee = 532 sg 2 ee o22 Fa Ow 22 0 5 g eu On 2u PULSE Z THERMAL 2 5 2 107-5 190-4 10-3 ip, DRAIN CURRENT (AMPERES) 1072 = 4 OPERATION IN THIS AREA 1S LIMITED BY Rpg(on) x N a gan To = 25C Ty = 150C MAX. Royc = 8.33 K/W SINGLE PULSE 2 4686 2 4 68 2 1.0 10 100 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92GS-44123 468 1000 Fig. 4 - Maximum safe operating area. 1, DUTY FACTOR, D = ty/ta 2. PER UNIT BASE = Rthuc = 8.33 DEG. C/W. 3. Tym ~ To-= Pom Zthuclt)- 2 5 2 5 10-1 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) 9268-44124 Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 80 ps PULSE TEST Vps > !pjon) * Rpsjon max.) = a = o Ty= 125C 0.5 1 2 3 4 5 6 Ip, DRAIN CURRENT (AMPERES) 9268-44125 Fig. 6 - Typical transconductance vs. drain current. lpr, REVERSE DRAIN CURRENT (AMPERES) = So 9 x ~ o Ty = 150C Ty = 25C 0 5 1.0 1.5 2.0 2.5 Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 9268-44126 Fig. 7 - Typical source-drain diode forward voltage.Standard Power MOSFETs 2N6786 a & = 2 2 e & & Qa = 2 o 20 40 60 80 1006 120 140 Tc, CASE TEMPERATURE (C) $2GS-44133 Fig. 14 - Power vs. temperature derating curve. PULSE WIDTH % ' Rise vimene INPUT PULSE FALL TIME et ig (on) ty % tg toft). TEKTRONIX Vos (OFF) . 29-502 7623 ouTPUT 10 % 90 % 9 osc. + + Vos (ON) - 80% 10% 502 NOTES: WHEN MEASURING RISE TIME, Vas(on) SHALL BE AS SPECIFIED ON THE INPUT WAVEFORM. WHEN MEASURING FALL TIME, Vasrorr) SHALL BE SPECIFIED ON THE INPUT WAVEFORM. THE INPUT TRANSITION AND DRAIN VOLTAGE RESPONSE DETECTOR SHALL HAVE RISE AND FALL RESPONSE TIMES SUCH THAT DOUBLING THESE RESPONSES NOTES: sv WILL NOT AFFECT THE RESULTS GREATER THAN THE PRECISION OF 1. LH006S CASE GROUNDED. MEASUREMENT. THE CURRENT SHALL BE SUFFICIENTLY SMALL 80 2. GROUNDED To LANE THAT DOUBLING IT DOES NOT AFFECT TEST RESULTS GREATER THAN 3. PULSE WIDTH = 3 0, PERIOD = 1 me, AMPLITUDE = 10 V. THE PRECISION OF MEASUREMENT. 9BGS~44134 #2G5-04535 Fig. 15 - Switching time test circuit. NOTES: 1. SET Vg TO THE VALUE SPECIFIED UNDER DETAILS USING A 0.1-8 PULSE WIDTH WITH A MINIMUM OF 1 MINUTE BETWEEN PULSES. INCREASE Vag UNTIL THE SPECIFIED VALUE OF Ip AND Vig ARE OBTAINED. CASE TEMPERATURE = 28C. 2. SELECT Rg SUCH THAT i[) - Ag = 2.8 + 1 Vee. 92GS-441396 Fig. 16 - Sate operating test circuit. 3-518