IRL1404SPbF
IRL1404LPbF
HEXFET® Power MOSFET
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for low-
S
D
G
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110A
IDM Pulsed Drain Current 640
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy520 mJ
IAR Avalanche Current95 A
EAR Repetitive Avalanche Energy20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
°C
Absolute Maximum Ratings
Thermal Resistance
VDSS = 40V
RDS(on) = 0.004Ω
ID = 160A
Description
04/19/04
PD - 95148
www.irf.com 1
D2Pak
IRL1404S
TO-262
IRL1404L
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient (PCB Mounted)––– 40
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lLead-Free
IRL1404S/LPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, D = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.004 ΩVGS = 10V, ID = 95A
0.0059 VGS = 4.3V, ID = 40A
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 93 ––– ––– S VDS = 25V, ID = 95A
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
QgTotal Gate Charge ––– ––– 140 ID = 95A
Qgs Gate-to-Source Charge ––– ––– 48 nC VDS = 32V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 60 VGS = 5.0V, See Fig. 6
td(on) Turn-On Delay Time ––– 18 ––– VDD = 20V
trRise Time ––– 270 ––– ID = 95A
td(off) Turn-Off Delay Time ––– 38 ––– RG = 2.5Ω VGS = 4.5V
tfFall Time ––– 130 ––– RD = 0.25Ω
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 6600 ––– VGS = 0V
Coss Output Capacitance ––– 1700 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 350 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6700 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 1500 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1500 ––– VGS = 0V, VDS = 0V to 32V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V
trr Reverse Recovery Time ––– 63 94 ns TJ = 25°C, IF = 95A
Qrr Reverse RecoveryCharge ––– 170 250 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
160
640
A
IRL1404S/LPbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
160A
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.3V
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.3V
100
1000
4.0 5.0 6.0 7.0 8.0
V = 15V
20
µ
s PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
IRL1404S/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
0100 200 300 400 500
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V = 20V
DS
V = 32V
DS
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V ,Source-to-Drain Volta
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Volta
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRL1404S/LPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
25 50 75 100 125 150 175
0
40
80
120
160
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRL1404S/LPbF
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
39A
67A
95A
IRL1404S/LPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET® power MOSFETs
IRL1404S/LPbF
8www.irf.com
D2Pak Part Marking Information (Lead-Free)
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in ass embly line
pos ition indicates "L ead-F ree"
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
AS S E MBL E D ON WW 02, 2000
IN T HE AS S E MB LY L INE "L"
AS S E M B L Y
LOT CODE
INT E R N AT IONAL
R E CT IF IE R
LOGO
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEE K 02
LINE L
OR
F530S
A = ASSEMBLY SITE CODE
WEEK 02
P = DE S I GNAT E S L E AD -F R E E
PRODUCT (OPTIONAL)
R E CT IF IE R
INT E R NAT IONAL
LOGO
LOT CODE
ASSEMBLY
YE AR 0 = 2000
DAT E CODE
PART NUMBER
IRL1404S/LPbF
www.irf.com 9
TO-262 Part Marking Information
TO-262 Package Outline
AS S E MB L Y
LOT CODE
RECTIFIER
INT E R NAT IONAL
AS S E MBLED ON WW 19, 1997
Note: "P" in assembly line
pos ition indicates "L ead-F ree"
IN THE ASSEMBLY LINE "C" LOGO
T HIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DAT E CODE
WEE K 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
AS S E MB L Y
INT E R NAT IONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DES IGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
WEE K 19
YEAR 7 = 1997
DAT E CODE
OR
IRL1404S/LPbF
10 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 95A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 0.35mH
RG = 25Ω, IAS = 95A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
This is applied to D2Pak, When mounted on 1" square PCB
(FR-4 or G-10 Material) . For recommended footprint and
soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
M IN .
30.40 (1.197)
M AX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. IN CL U DE S F LAN G E D IS T OR T IO N @ O U TER E D GE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/