1
MRF185MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
•High Gain, Rugged Device
•Broadband Performance from HF to 1 GHz
•Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Gate–Source Voltage VGS ±20 Vdc
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ200 °C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD250
1.45 Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.7 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1
m
Adc) V(BR)DSS 65 – – Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V) IDSS ––1µAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V) IGSS ––1µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF185/D
SEMICONDUCTOR TECHNICAL DATA
85 WATTS, 1.0 GHz
28 VOLTS
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–02, STYLE 2
Motorola, Inc. 1997
D
GS
(FLANGE)
D
G
REV 1
MRF185
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 V, ID = 300 mA per side) VGS(Q) 3 4 5 Vdc
Delta Quiescent Voltage between sides
(VDS = 26 V, ID = 300 mA per side) ∆VGS(Q) –0.15 0.3 Vdc
Drain–Source On–V oltage
(VGS = 10 V, ID = 3 A per side) VDS(on) –0.75 1 Vdc
Forward T ransconductance
(VDS = 10 V, ID = 3 A per side) gfs 1.6 2 – s
DYNAMIC CHARACTERISTICS
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss –38 – pF
Reverse T ransfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss –4.6 6 pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) Gps 11 14 – dB
Drain Efficiency
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) η45 55 – %
Load Mismatch
(VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA,
Load VSWR 5:1 at All Phase Angles) ΨNo Degradation in Output Power
3
MRF185MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 375B–02
ISSUE A
STYLE 2:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.330 1.350 33.79 34.29
B0.375 0.395 9.52 10.03
C0.180 0.210 4.57 5.33
D0.320 0.340 8.13 8.64
E0.060 0.070 1.52 1.77
F0.004 0.006 0.11 0.15
G1.100 BSC 27.94 BSC
H0.093 0.108 2.36 2.74
K0.085 0.115 2.16 2.92
L0.425 BSC 10.80 BSC
N0.845 0.875 21.46 22.23
Q0.118 0.130 3.00 3.30
R0.390 0.410 9.91 10.41
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
G
L
K
R
D
12
34
Q 2 PL
M
B
M
0.25 (0.010) T
–B–
–T–
E
H
N
A
F
C
SEATING
PLANE
5
4 PL
MRF185
4MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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Opportunity/Af firmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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MRF185/D
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