DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 29 2001 May 31
DISCRETE SEMICONDUCTORS
BSP60; BSP61; BSP62
PNP Darlington transistors
handbook, halfpage
M3D087
2001 May 31 2
NXP Semiconductors Product data sheet
PNP Darlington transistors BSP60; BSP61; BSP62
FEATURES
High current (max. 0.5 A)
Low voltage (max. 80 V)
Integrated diode and resis tor .
APPLICATIONS
Industrial switching applications such as:
Print hammer
Solenoid
Relay and lamp drivers.
DESCRIPTION
PNP Darlington transisto r in a SOT223 plastic pack age.
NPN complements: BSP50, BSP51 and BSP52.
PINNING
PIN DESCRIPTION
1base
2, 4 collector
3emitter
Fig.1 Simplified outline (SOT223) and symbol.
4
123
MAM266
Top view
1
2, 4
3
LIMITING VALUES
In accordance with th e Absolute Ma ximum Ratin g System (IEC 60134).
Note
1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BSP60 60 V
BSP61 80 V
BSP62 90 V
VCES collector-emitter voltage VBE = 0
BSP60 45 V
BSP61 60 V
BSP62 80 V
VEBO emitter-base vo ltage open collector 5 V
ICcollector current (DC) 1 A
ICM peak collector current 2 A
IBbase current (DC) 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 1.25 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2001 May 31 3
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BSP60; BSP61; BSP62
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 98 K/W
Rth j-s thermal resistance from junction to solder point 17 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES collector cut-off current
BSP60 VBE = 0; VCE = 45 V −−−50 nA
BSP61 VBE = 0; VCE = 60 V −−−50 nA
BSP62 VBE = 0; VCE = 80 V −−−50 nA
IEBO emitter cut-off current IC = 0; VEB = 4 V −−−50 nA
hFE DC current gain VCE = 10 V; note 1; see Fig.2
IC = 150 mA 1 000
IC = 500 mA 2 000
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 0.5 mA −−−1.3 V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C−−−1.3 V
VBEsat base-emitt er saturation voltage IC = 500 mA; IB = 0.5 mA −−−1.9 V
fTtransition freque ncy IC = 500 mA; VCE = 5 V;
f = 100 MHz 200 MHz
Switching times (between 10% and 90% levels); see Fig.3
ton turn-on time ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA 400 ns
toff turn-off time 1 500 ns
2001 May 31 4
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BSP60; BSP61; BSP62
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
6000
2000
1000
3000
4000
5000
MGD839
10
1
110 10
2
10
3
hFE
IC (mA)
VCE = 10 V.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = 1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
2001 May 31 5
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BSP60; BSP61; BSP62
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
2001 May 31 6
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BSP60; BSP61; BSP62
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or completing a design.
2. The product s tatus of device(s) described in this document may ha ve changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
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specified use witho ut fu rth e r testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other co nditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/05/pp7 Date of release: 2001 May 31 Document orde r number: 9397 750 07906