2SK3818 2SK3818 Ordering number : ENN8056 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * * * Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings Unit VDSS VGSS 60 V 20 V ID 74 A IDP PW10s, duty cycle1% 296 A 1.65 W Allowable Power Dissipation PD 75 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 410 mJ Avalanche Current *2 IAV 74 A Tc=25C Note : *1 VDD=20V, L=100H, IAV=74A *2 L100H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)DSS IDSS typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 60 VDS=10V, ID=1mA 1.2 yfs RDS(on)1 VDS=10V, ID=37A 27 ID=37A, VGS=10V RDS(on)2 ID=37A, VGS=4V IGSS VGS(off) Marking : K3818 (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings min Unit max V 10 A A 2.6 V 10 13 m 13 18 m 1 45 S Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: 2SK3818/D 2SK3818 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD pF pF VDS=20V, f=1MHz See specified Test Circuit. 525 pF 38 ns See specified Test Circuit. 315 ns See specified Test Circuit. 370 ns See specified Test Circuit. 310 ns VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A 100 nC 18 nC VDS=30V, VGS=10V, ID=74A IS=74A, VGS=0 16 10.2 4.5 2.55 2 V 2.55 1.3 3 1.2 2.55 2.7 1 : Gate 2 : Drain 3 : Source 2.7 1 0.8 1.35 11.0 9.4 3.0 20.9 3 2.55 2.55 2.55 1.5 1.4 1.6 9.9 8.8 0.8 1.3 0.4 2 nC 1.13 1.2 1 Unit 780 1.5max 8.8 4.5 0.8 max Package Dimensions unit : mm 2090A 10.2 0.9 typ 5250 Package Dimensions unit : mm 2093A 11.5 min VDS=20V, f=1MHz VDS=20V, f=1MHz td(off) tf Fall Time Ratings Conditions 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD SANYO : SMP Switching Time Test Circuit Unclamped Inductive Test Circuit VDD=30V VIN 10V 0V 50 RG ID=37A RL=0.81 VIN D DUT VOUT PW=10s D.C.1% 15V 0V G 2SK3818 P.G 50 L S Rev.0 I Page 2 of 4 I www.onsemi.com 50 VDD 2SK3818 ID -- VDS ID -- VGS 90 VDS=10V Tc=25C 80 4V 70 40 30 20 1.0 1.2 1.4 1.6 1.8 0 20 Tc=75C 25C --25C 5 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V Forward Current, IF -- A 10 = Tc 7 5 --2 C 75 5 C 3 2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 4.5 IT07835 4V S= I D= 15 , 37A I D= 10 =10V VGS 5 --25 0 25 50 75 100 125 150 IT07837 IF -- VSD VGS=0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT07839 Ciss, Coss, Crss -- VDS 10000 f=1MHz VDD=30V VGS=10V 7 td(off) 3 tf 2 100 tr 7 5 Ciss 5 Ciss, Coss, Crss -- pF 5 3 2 Coss 1000 Crss 7 td(on) 5 3 2 0.1 4.0 , VG 37A 0.01 0.2 5 7 100 IT07838 SW Time -- ID 1000 3.5 20 100 7 5 3 2 C 25 3.0 Case Temperature, Tc -- C 5 2 2.5 25 IT07836 VDS=10V 3 2.0 RDS(on) -- Tc 0 --50 10 yfs -- ID 100 1.5 30 Static Drain-to-Source On-State Resistance, RDS(on) -- m 25 10 1.0 Gate-to-Source Voltage, VGS -- V ID=37A 15 0.5 IT07834 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- m 2.0 --25C 0.8 25C 0.6 5C 0.4 Tc=7 0.2 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, yfs -- S 25 0 0 Switching Time, SW Time -- ns 30 10 0 7 40 20 VGS=3V 10 7 50 C --25 C 50 60 5C 60 Tc =7 Drain Current, ID -- A 8V Drain Current, ID -- A 70 6V 10 V 80 25 Tc= C --25 C 75 C 90 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT07840 0 Rev.0 I Page 3 of 4 I www.onsemi.com 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT07841 2SK3818 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 10 20 30 40 50 60 70 80 Total Gate Charge, Qg -- nC 100 10 10 10 7 5 3 2 Operation in this area is limited by RDS(on). 1.0 7 5 3 2 2 3 5 7 1.0 1.0 0.5 2 3 5 7 10 2 3 5 7 100 IT07843 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.5 1m 10 s m 1 DC 00m s s op era tio n Tc=25C Single pulse PD -- Tc 90 1.65 s 0 s ID=74A 100 7 5 3 2 IT07842 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 90 IDP=296A 0.1 0.1 0 0 ASO 7 5 3 2 VDS=30V ID=74A 80 75 70 60 50 40 30 20 10 0 0 0 20 40 60 80 100 120 140 Amibient Tamperature, Ta -- C 160 0 20 IT07811 40 60 80 100 120 140 Case Tamperature, Tc -- C 160 IT07844 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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