MBR2535CT - MBR2560CT
MBR2535CT - MBR2560CT, Rev. A1
MBR2535CT - MBR2560CT
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
2001 Fairchild Semiconductor Corporation
Symbol
Parameter
Value
Units
IF(AV) Average Rectified Current
.375 " lead lengt h @ T A = 130°C 30 A
IFRM Peak Repetitive Forward Current
(Rated VR , S quare Wave, 20 KHz) @ T A = 130°C
30
A
IFSM Non-repetitive Peak Forward Surge Current
8.3 m s single half-sine-wave
Superim posed on rated load (J E DE C method)
150
A
PD Total Devic e Di ssipat i on
Derate above 25°C 2.0
16.6 W
mW/°C
RθJA Thermal Resistance, Junc t i on to Am bi ent 60 °C/W
RθJL Thermal Resistance, Junc tion to Lead 1.5 °C/W
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Tem perature -65 to +150 °C
Symbol
Parameter
Device
Units
2535CT 2545CT 2550CT 2560CT
VRRM Peak Repeti tive Revers e V ol tage 35 45 50 60 V
VRMS Maximum RMS Voltage 24 31 35 42 V
VR DC Reverse Vo l tage (Rated V R) 35 45 50 60 V
Voltage Rat e of Change (Rated VR) 10,000 V/µs
IRM Maximum I nstantaneous Reverse Current
@ rated VR TA = 25°C
T
A = 125°C
0.2
40
1.0
50
mA
mA
VFM Maximum Instantaneous Forward Voltage
IF = 15 A, TC = 25°C
IF = 15 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
-
-
0.82
0.73
0.75
0.65
-
-
V
V
V
V
IRRM Peak Repeti tive Revers e S urge Current
2.0 us Pulse Wi dth, f = 1.0 KHz 1.0 0.5 A
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
TO-220AB
+
CASE
PIN 2
PIN 3
PIN 1
123
MBR2535CT - MBR2560CT
MBR2535CT - MBR2560CT, Rev. A1
Schottky Barrier Rectifier
(continued)
Typical Characteristics
For ward Current Derating Curve
0 25 50 75 100 125 150 175
0
6
12
18
24
30
AMBIENT TEMPERATURE ( C)
FOR WARD CU RRENT (A)
SINGLE PHASE
HALF WAVE
60 H Z
RESISTIVE OR
INDUCTIVE LOAD
.37 5" (9.00mm) LOAD
LENGTHS
º
T ran sient Thermal Impedance
0.01 0.1 1 10 100
0.1
1
10
100
T. PUL SE DURATION (se c.)
TRA NS IEN T THERMAL I MP EDANCE ( C/W)
º
Non -Repetit ive Su rge Cu rrent
12 51020 50100
0
25
50
75
100
125
150
N UMB E R OF CYCLE S AT 6 0H z
PEAK FORWARD SURGE CURRENT (A)
Typical Junction Capacitance
0.1 1 10 100
100
200
500
1000
2000
5000
REVERSE VOLTAGE (V)
JUNCTIO N CAP ACITANCE ( pF )
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
Forward Charac t eristi cs
0 0.2 0.4 0.6 0.8 1 1.2
0.01
0.1
1
10
50
FOR WARD VO LT A GE (V)
FOR WARD CU RRENT (A)
Pulse Widt h = 300µ
µµ
µS
2% Duty Cycle
T = 25 C
º
A
T = 150 C
º
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
Reverse Charact eri stics
0 20406080100120140
0.001
0.01
0.1
1
10
50
PER CE NT OF R ATE D PEA K RE VER SE VO LTAGE (%)
REVERSE CU RRENT (mA)
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2550CT-MBR2560CT
MBR2535CT-MBR2545CT
TO-220AB (FS PKG Code P8)
TO-220AB Package Dimensions
September 1999, Rev. A
1:1
Scale 1:1 on letter size paper
Dimensions shown belo w are in:
inches [millimeters]
Part Weight per unit (gram): 2.24
©2000 Fairchild Semiconductor International
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