Features * * * * * * PIN 1 + Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. CASE PIN 2 PIN 3 1 2 3 TO-220AB 30 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IF(AV) IFRM IFSM PD RJA TA = 25C unless otherwise noted Parameter Value Units 30 A 30 A 150 A 2.0 16.6 60 W mW/C C/W Average Rectified Current .375 " lead length @ TA = 130C Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130C Non-repetitive Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient RJL Thermal Resistance, Junction to Lead 1.5 C/W Tstg Storage Temperature Range -65 to +175 C TJ Operating Junction Temperature -65 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics Symbol VRRM Parameter Peak Repetitive Reverse Voltage VRMS Maximum RMS Voltage VR DC Reverse Voltage IRM VFM IRRM TA = 25C unless otherwise noted (Rated VR) Voltage Rate of Change (Rated VR) Maximum Instantaneous Reverse Current @ rated VR TA = 25C TA = 125C Maximum Instantaneous Forward Voltage IF = 15 A, TC = 25C IF = 15 A, TC = 125C IF = 30 A, TC = 25C IF = 30 A, TC = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation Device Units 2535CT 2545CT 2550CT 2560CT 35 45 50 60 V 24 31 35 42 V 35 45 50 60 10,000 V V/s 0.2 40 1.0 50 mA mA 0.82 0.73 0.75 0.65 - V V V V 1.0 0.5 A MBR2535CT - MBR2560CT, Rev. A1 MBR2535CT - MBR2560CT MBR2535CT - MBR2560CT (continued) Typical Characteristics Non-Repetitive Surge Current FORWARD CURRENT (A) 24 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 175 PEAK FORWARD SURGE CURRENT (A) Forward Current Derating Curve 30 150 125 100 75 50 25 0 1 Forward Characteristics MBR2535CT-MBR2545CT REVERSE CURRENT (mA) TA = 25 C T A = 150 C 10 MBR2550CT-MBR2560CT 1 MBR2535CT-MBR2545CT 0.1 S Pulse Width = 300 2% Duty Cycle 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 Typical Junction Capacitance 2000 MBR2535CT-MBR2545CT 1000 MBR2550CT-MBR2560CT 500 200 100 0.1 1 10 REVERSE VOLTAGE (V) 100 10 T A = 125 C 1 MBR2550CT-MBR2560CT TA = 75 C 0.1 MBR2535CT-MBR2545CT 0.01 0.001 1.2 TA = 25 C MBR2550CT-MBR2560CT 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE ( C/W) FORWARD CURRENT (A) 100 50 5000 JUNCTION CAPACITANCE (pF) 5 10 20 50 NUMBER OF CYCLES AT 60Hz Reverse Characteristics 50 0.01 2 Transient Thermal Impedance 100 10 1 0.1 0.01 0.1 1 10 T. PULSE DURATION (sec.) 100 MBR2535CT - MBR2560CT, Rev. A1 MBR2535CT - MBR2560CT Schottky Barrier Rectifier TO-220AB Package Dimensions TO-220AB (FS PKG Code P8) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 2.24 (c)2000 Fairchild Semiconductor International September 1999, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G