SUF1002 Semiconductor Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features * * * * Low Low Low Low Crss : Crss=36pF(Typ.) gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=24m(Typ.) VGS(th) : VGS(th)=1.0~3.0V Ordering Information Type NO. Marking SUF1002 Package Code SUF1002 SOP-8 Outline Dimensions unit : mm 5.88~6.18 4.81~5.01 1.24~1.44 0.27 Max. 1.27 Typ. 3.81 Typ. 0.52 Max. 0.27 Max. 3.70~3.90 0.46 Min. Block Diagram PIN Connections 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5. Drain 2 6. Drain 2 7. Drain 1 8. Drain 1 KSD-T7F001-000 1 SUF1002 Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V ID 5.8 A IDP 23.2 A PD 2.0 W Drain current (DC) Drain current (Pulsed) * Total Power dissipation ** Avalanche current (Single) IAS 5.8 A Single pulsed avalanche energy EAS 72 mJ Avalanche current (Repetitive) IAR 5.8 A Repetitive avalanche energy EAR 3.4 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range C * Limited by maximum junction temperature * *Device moonted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Typ. Rth(J-a) 62.5 KSD-T7F001-000 Max Unit /W 2 SUF1002 Electrical Characteristics Characteristic (Ta=25C) Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250A, VGS=0 30 - - V Gate threshold voltage VGS(th) ID=250A, VDS= VGS 1.0 - 3.0 V Drain-source cut-off current IDSS VDS=30V, VGS=0V - - 1 A Gate leakage current IGSS VDS=0V, VGS=20V - - 100 nA VGS=10V, ID=2.9A - 24 30 m VGS=5.0V, ID=2.9A - 28 34 m VDS=5V, ID=5.8A - 12 - S - 370 560 - 60 90 - 36 54 - 1.2 - - 1.1 - - 2.5 - - 1.1 - - 4.2 6.3 - 0.9 1.4 - 1.4 2.1 Drain-source on-resistance Forward transfer conductance RDS(ON) gfs Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time VGS=0V, VDS=10V, f=1MHz tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD=15V, ID=5.8A RG=10 VDS=15V, VGS=5V ID=5.8A Source-Drain Diode Ratings and Characteristics Characteristic Symbol Source current IS Test Condition pF ns nC (Ta=25C) Min Typ Max - - 1.5 - - 6.0 Unit Source current(Plused) ISM Integral reverse diode in the MOSFET Forward voltage VSD VGS=0V, IS=1.5A - - 1.2 V Reverse recovery time trr - 90 - ns Reverse recovery charge Qrr Is=1.5A diS/dt=100A/us - 0.5 - uC A Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3.4mH, IAS=5.8A, VDD=15V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T7F001-000 3 SUF1002 Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 6 VGS - QG Fig. 5 Capacitance - VDS KSD-T7F001-000 4 SUF1002 Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ C C Fig. 10 Safe Operating Area Fig. 9 ID - Ta * t KSD-T7F001-000 5 SUF1002 Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform = Fig. 13 EAS Test Circuit & Waveform KSD-T7F001-000 6 SUF1002 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T7F001-000 7 SUF1002 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T7F001-000 8