NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 100 Volt VCEO
* 2 Amps continuous current
* Low saturation voltage
*P
tot= 1 Watt
REFER TO ZTX653 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 6A
Continuous Collector Current IC2A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120 V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 100 V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO 0.1
10 µA
µA
VCB
=100V, IE=0
VCB
=100V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.13
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.25 V IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.8 1 V IC=1A, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
55
25
200
200
110
55
300
IC=50mA, VCE
=2V*
IC=500mA, VCE
=2V*
IC=1A, VCE
=2V*
IC=2A, VCE
=2V*
Transition
Frequency
fT140 175 MHz IC=100mA, VCE
=5V
f=100MHz
Output Capacitance Cobo 30 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
FXT653
3-48
B
C
E
DISCONTINUED
PLEASE USE ZTX653
