Microsemi a Sa ae 140 Commerce Drive Montgomeryville, PA 18936-1013 Tek (248) 631-9846 2N6080 2N6084 RF & MICROWAVE TRANSISTORS 130... 230MHz FM MOBILE APPLICATIONS a FREQUENCY. VSMAE VOLTAGE 125M POWER OUT 4 AoW HIGH POWER GAIN HIGH EFFICIENCY FM CLASS TRANSISTORS COMMON - EMITTER S80 -4LSTUD (M135) epory sealed ORDER CODE BRANDING SDWN2 2NGoS9 SEND 4-8 2NGUST SE 229-07 2NBOR? SO1228-08 ENCES ADTtINa 2NGUS4 PIN CONNECTION | tl Al j Po RET DESCRIPTION otk J 2) Thig ine ot epitaxial silicon NPN-planar transistor ig by desiqned primarily tar VHF mobile and marine trans: po 4 mitters. The device utiizes emitter ballasiing resis- i spasransioen fors-and improved metaliization systems to achieve sestieaianie ce ~ extreme ruggecrioss under severe operating corel: | collector POSE Hors. . 2. Sotier mrtie ABSOLUTE MAXIMUM RATINGS [Tx = 28C} Wat : Symbol Parameter aiue Unit 2N6680 2nNeon4 2N6002 2NG053 2Nbog4 Veeg | Canlector-io Bases an8 36.0 36.0 368.6 36.0 Yethage Veso | -Collecter ta $8.0 48.0 780 1BG 13.0 Emitter Voltage . Veao f-Emiller to Base ay ag 4.0 AD ao Y Voltage idm) Conlinuens 1 28 ao 4G BO & Catlesion Current Py Tolil Diseadion 420 B48 65.0 65.6 80.0 W af 2u-O- Stud Y: dusction + 200 + P08 PDO RO 2G S Temperature heated Tag Storage = BS tye 1a) 8S toe 180.) - 68 toe 9807 BR tee SG oR kee TAD) AD Pampecbure March 1962 is2N6080 -> 2N6084 THERMAL DATA 2N6080 2N6681 ehBORS 2NeO8S 2N6084 Bled bh dunnmornane 15 56 2 28 2.2 GW Tharmal Resis: ELECTRICAL: CHARACTERISITICS (T.g.6% 26C) S-EATC Syinbl| Test Conditions 2NeGEO SNe084 2N6o2 2N6D83 INGoe4 Unit Min. Typ. Mast Min. Typ] Mas in Pye net hin. Typ, Mas] Min. Tye Max, Byeee. fore Ba vee O 38 36 38 38 a6 vi Boeoga:|ier DGrAds =o 18 18 is +2 #8 Boece bt oT ER ee oe 4 a 4 4 & 4 Mogee TaV tes dt 25 OS t 1 2A) a veg = BV lg 3 025A | 5 5 & 5 8 DYNAMIC a 7 x spmae Teal Canditions 2NeoRd angst SNGO82 at. anbO83 SNG084 unit Min: [hyp Mae. (Min. (Tyo. Max din. yp. (Mae Blin, | typ ciMex Mins Typ iMag Se TR a V7oMe 4 ay BS g an We Veg e TR bY cides Be Fe ES AGH $2 aa 62 ae As ak Wee 2 SGV Dlage & He Bat P SMM. 50 ao 5G &G a0 3 Vesa 2 Sv Clea 0 fr 00 ug eOu eng 200 MHz en So as $98 130 ado} pt APPLICATION INFORMATION (typical curves) IMPEDANCE DATA {typical} 2N6og0 TS po a 78 as mi g Vg A258 VOLTS Bei pecs eS BEPICIENCY ed i = a & x 6 a ee Pout al = ee aS z 2 2 E ed a a 6 7 8 ae o4- U8 POWER INPUT (WATTS) i Bupanipudecte POWER OUT AND EPPFIGIENCY vs POWER IN he oh NETWORK IMPEDANCE AT TRANSISTOR TERMINALS fy 17 SMH ay Veo = 125 Pin Put INPUT OUTPUT WATTS WATTS OHMS OHMS 4 33 Phelie | $84 fia 03 49 224 )09 | Rea ]9.8 Os .8 BOA | Babs 16.82N6080 <> 2ZN6084 2N6061 NETWORK IMPEDANCE AT TRANSISTOR + 3 TERMINALS Voce aos vOui Le fg = 175MH2, Veco = 12.8V nee "5 Pin Pout INPUT | GUTPUT op [operon ws WATTS | WATTS OHMS OHMS ge BERRIEN? Oe a ao : | a4 68h. | 40400 5 : a es 3 19.6 IOs | BS 4 je ein bo | ws 5 7.6 HOW10 | 294306 z ot 8 % Pi POWER INPUT FATES} SARoneoe sat] POWER QUT AND EFFICIENCY vs POWER IN 2N6082 NETWORK IMPEDANCE AT TRANSISTOR TERMINALS _ & fos I7SMHz, Veo = 12.5 Ee ie Pin Pout INPUT | QUTPUT = e WATTS | WATTS | OHMS | OHMS 5 25 74 O8= 40 | 24415 au 3 50 275 08-Wo b 214 64 & be 78 358 OF-91 | Say B4 e 10 E i nel 8 t x 4 & Bo ome POWEI TRIS (WATTS SSR te POWER OUT AND EFFICIENCY vs POWER IN v8ZNG080 > 2N6084 2NG084 86 i, 17a Me = Veg = ILS VOLES a ao S40 3 Ee ; 0 40. 0 mi 328 i2 POWER INPUT: (WATTS) SBBERSOI4 Oe POWER OUT AND EFFICIENCY vs POWER JN NETWORK IMPEDANCE AT TRANSISTOR TERMINALS fy = 2 75MH2, Veo = 12.5 Pin Pout INPUT = OUTPUT WATTS | WATTS | OHMS OHMS 4 AL 8p 22-03 a FA C8 p18 tee DS 12 46.5 OG= 18 (16% j032NGO80. -s 2N6084 PACKAGE MECHANICAL DATA SB 4b STUD peg A Soh F Lut Ty E 4 a + t 4 t | t it So LSet * * k SRRaNER GH Pa ted Minimum Maximum Minimum Maximum inches Inches Inches: Inches A BaG G So ev) 5 22g ag AH 320 B38 c ore 85 | ASO 420 . G PPS id BS = 65 APS K AGO 330 F 8O4 DO? 93