2011-07-18
1
BAR50...
Silicon PIN Diodes
• Current-controlled RF resistor
for switching and attenuating applications
• Frequency range above 10 MHz up to 6 GHz
• Especially useful as antenna switch
in mobile communication
• Very low capacitance at zero volt reverse bias
at freuencies above 1 GHz (typ. 0.15 pF)
• Low forward resistance
• Very low harmonic distortion
• Pb-free (RoHS compliant) package
• Qualified according AEC Q1011)
BAR50-02L
BAR50-02V
BAR50-03W
Type Package Configuration LS(nH) Marking
BAR50-02L*
BAR50-02V
BAR50-03W
TSLP-2-1
SC79
SOD323
single, leadless
single
single
0.4
0.6
1.8
AB
a
blue A
1*BAR50-02L is not qualified according AEC Q101
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Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR50 V
Forward current IF100 mA
Total power dissipation
BAR50-02L, TS ≤ 130°C
BAR50-02V, TS ≤ 120°C
BAR50-03W, TS ≤ 115°C
Ptot
250
250
250
mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BAR50-02L
BAR50-02V
BAR50-03W
RthJS
≤ 80
≤ 120
≤ 140
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 50 V
IR- - 50 nA
Forward voltage
IF = 50 mA
VF- 0.95 1.1 V
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 5 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1...1.8 GHz, BAR50-02L
VR = 0 V, f = 1...1.8 GHz, all other
CT
-
-
-
-
-
0.24
0.2
0.2
0.1
0.15
0.5
0.4
-
-
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
25
6
5
-
-
-
kΩ
Forward resistance
IF = 0.5 mA, f = 100 MHz
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
-
25
16.5
3
40
25
4.5
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 1100 - ns
I-region width WI- 56 - µm
Insertion loss1)
IF = 3 mA, f = 1.8 GHz
IF = 5 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.56
0.4
0.27
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
VR = 0 V, f = 5.6 GHz
ISO
-
-
-
-
24.5
20
18
12
-
-
-
-
1BAR50-02L in series configuration, Z = 50 Ω
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Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100 MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
2
10
3
10
4
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40 °C
25 °C
85 °C
125 °C
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BAR50...
Forward current IF = ƒ (TS)
BAR50-02L
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Forward current IF = ƒ (TS)
BAR50-02V
0 15 30 45 60 75 90 105 120 C° 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Forward current IF = ƒ (TS)
BAR50-03W
0 15 30 45 60 75 90 105 120 C° 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Permissible Pulse Load RthJS = ƒ (tp)
BAR50-02L
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
2
10
mA
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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BAR50...
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR50-02L
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
mA
IFmax/ IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ (tp)
BAR50-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR50-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
s
tp
0
10
1
10
IFmax/IFDC
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ (tp)
BAR50-03W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
RthjS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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BAR50...
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR50-03W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
IFmax/IFDC
0
0.005
0.1
0.2
0.5
1
2
5
Isolation ISO = -|S21|2 = ƒ(f)
VR = Parameter
BAR50-02L in series configuration, Z = 50Ω
01234GHz 6
f
-30
-25
-20
-15
-10
dB
0
|S21|2
0 V
1 V
10 V
Insertion loss IL = -|S21|2 = ƒ(f)
IF = Parameter
BAR50-02L in series configuration, Z = 50Ω
01234GHz 6
f
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
dB
0
|S21|2
5 mA
10 mA
100 mA
3 mA
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BAR50...
Package SC79
2011-07-18
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BAR50...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
1) New Marking Layout for SC75, implemented at October 2005.
.
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04dsDSdsDSdsDS
05et ETet ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXhxHXhxHX
09jyJYjyJYjyJY
10kzKZkzKZkzKZ
11l 2L4l 2L4l 2L4
12n3N5n3N5n3N5
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Package SOD323
2011-07-18
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BAR50...
Package TSLP-2-1
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BAR50...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
