MICROWAVE CORPORATION
13 - 2 For price, delivery, and to place orders, please contact Hittite Microwave Cor poration:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MODULATORS - SMT
13
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v00.0803 HMC495LP3
General Description
Features
Functional Diagram The HMC495LP3 is a low noise Wideband Direct
Quadrature Modulator RFIC which is ideal for
digital modulation applications from 250 - 3800
MHz including; Cellular/3G, Broadband Wireless
Access & ISM circuits. Housed in a compact 3x3
mm (LP3) SMT QFN package, the RFIC requires
minimal external components & provides a low
cost alternative to more complicated double up-
conversion architectures. The RF output port is
single-ended and matched to 50 Ohms with no
external components. The LO requires -6 to +6
dBm and can be driven in either differential or
single-ended mode while the Baseband inputs
will support modulation inputs from DC - 250 MHz
typical. This device is optimized for a supply volt-
age of +3.3V @ 108 mA and will provide stable
perf ormance over a +3.0V to +3.6V range.
Wideband RF Frequency Range
High Carrier Suppression: 38 dBc
Very Low Noise Floor: -158 dBm/Hz
Low LO Power: -6 to +6 dBm
Differential or Single Ended LO Input
Single Low Current Supply: +3.3V@ 108 mA
Typical Applications
The HMC495LP3 is suitable for
various modulation systems:
• UMTS, GSM or CDMA Basestations
• Fixed Wireless or WLL
• ISM Transceivers, 900 & 2400 MHz
• GMSK, QPSK, QAM, SSB Modulators
Electrical Specifi cations, See Test Conditions on following page herein.
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range, RF 450 - 960 1800 - 2200 2100 - 2700 3400 - 3800 MHz
Output Power -7 -5 -8 -6 -9 -7 -11 -9 dBm
Output P1dB 2 1 0 -2 dBm
Output IP3 17 14 14 13 dBm
Output Noise Floor -159 -158 -158 -157 dBm/Hz
Carrier Suppression (uncalibrated) 38 38 35 34 dBc
Sideband Suppression (uncalibrated) 34 31 30 28 dBc
IM3 Suppression 59 50 50 56 dBc
RF Port Return Loss 18 17 16 13 dB
LO Port Return Loss 13 8 7 5 dB
CDMA IS95
ACPR@ 880 MHz & 1960 MHz -72 -71.5 N/A N/A dBc
Channel Power -15 -18.4 N/A N/A dBm
W-CDMA 3GPP
ACPR@ 1960 & 2140 MHz N/A -60 -59 N/A dBc
Channel Power N/A -17.3 -14.4 N/A dBm
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13
MODULATORS - SMT
Electrical Specifi cations, (continued)
Parameter Conditions Min. Typ. Max. Units
RF Output
RF Frequency Range 0.25 3.8 GHz
RF Return Loss 16 dB
LO Input
LO Frequency Range 0.25 3.8 GHz
LO Input Power With 68 Ohm shunt resistor on LO port. -6 0 +6 dBm
LO Port Return Loss With 68 Ohm shunt resistor on LO port. 7 dB
Baseband Input Port
Baseband Port Bandwidth With 50Ω source & external 10 pF shunt cap to ground.
Refer to HMC495LP3 Application Circuit. DC 250 MHz
Baseband Input DC Voltage (Vbbdc) This parameter can be varied in order to optimize
the device performance over temperature and/or supply. 1.0 1.15 1.2 V
Baseband Input DC Bias Current (Ibbdc) Single-ended. 40 µA
Single-ended Baseband Input Capacitance De-embed to the lead of the device. 0.5 pF
DC Power Requirements See Test Conditions Below
Supply V oltage (Vcc1, Vcc2, Vb1, Vb2) 3 3.3 3.6 V
Supply Current (Icc1, Icc2, Ib1, Ib2) 108 mA
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Parameter Condition
Temperature +25 °C
Baseband Input Frequency 200 kHz
Baseband Input DC Voltage (Vbbdc) 1.15V
Baseband Input AC Voltage (Peak to Peak Differential, I and Q) 800 mV
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q) 400 mV per tone @ 150 & 250 kHz
Frequency Offset for Output Noise Measurements 20 MHz
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2) 3.3V
LO Input Power 0 dBm
LO Input Mode Single-Ended
Mounting Confi guration Refer to HMC495LP3 Application Schematic Herein
Sideband & Carrier Suppression Uncalibrated
Test Conditions: Unless Otherwise Specifi ed, the Following Test Conditions Were Used
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppres sion plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I /Q amplitude
balan ce and I /Q p hase of fset ( skew) at +25 °C, an d at each LO input p ower level. The + 25 °C adju stme nt sett ings
were held constant during tests ov er temperature. The “Calibrated, over Temperature” plots represent the worst case
calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “ Calibrate d, + 25 °C” Carr ier Sup pressio n data was p lotte d after a ma nual adju stment of t he Ip / In & Qp/ Qn DC
offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests
over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels
measured at T= -40 °C, +25 °C, and +85 °C.
MICROWAVE CORPORATION
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MODULATORS - SMT
13
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Wideband Performance vs. Frequency Output Noise Floor
and P1dB vs. Frequency
Output IP3 vs. Frequency Return Loss
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
OUTPUT POWER (dBm), CARRIER SUPPR. (dBc)
SIDEBAND SUPPR. (dBc), 3rd HARMONIC (dBc)
FREQUENCY (MHz)
OUTPUT POWER
3rd HARMONIC
CARRIER SUPPRESSION
SIDEBAND SUPPRESSION
-170
-160
-150
-140
-130
-120
-20
-15
-10
-5
0
5
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
OUTPUT NOISE (dBm/Hz)
OUTPUT P1dB (dBm)
FREQUENCY (MHz)
SET-UP NOISE FLOOR
0
2
4
6
8
10
12
14
16
18
20
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
OUTPUT IP3 (dBm)
FREQUENCY (MHz)
-25
-20
-15
-10
-5
0
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
LO (Single-ended)
RF
RETURN LOSS (dB)
FREQUENCY (MHz)
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13
MODULATORS - SMT
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Output Noise vs. LO Power
Over Temperature@ 830 MHz Output Noise vs. LO Power
Over Supply@ 830 MHz
Sideband Suppression*
vs. LO Power@ 830 MHz Carrier Suppression*
vs. LO Power@ 830 MHz
Output IP3 & Output Power vs.
LO Power Over Temperature@ 830 MHz Output IP3 & Output Power vs.
LO Power Over Supply@ 830 MHz
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
SIDEBAND SUPPRESSION (dBc)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
CARRIER SUPPRESSION (dBc)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT NOISE (dBm/Hz)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT NOISE (dBm/Hz)
LO POWER (dBm)
* See note titled “Calibrated vs. Uncalibrated test results” herein.
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
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MODULATORS - SMT
13
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
* See note titled “Calibrated vs. Uncalibrated test results” herein.
Output Noise vs. LO Power
Over Temperature@ 1900 MHz Output Noise vs. LO Power
Over Supply@ 1900 MHz
Sideband Suppression*
vs. LO Power@ 1900 MHz Carrier Suppression*
vs. LO Power@ 1900 MHz
Output IP3 & Output Power vs.
LO Power Over Temperature@ 1900 MHz Output IP3 & Output Power vs.
LO Power Over Supply@ 1900 MHz
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
SIDEBAND SUPPRESSION (dBc)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
CARRIER SUPPRESSION (dBc)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT NOISE (dBm/Hz)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT NOISE (dBm/Hz)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
MICROWAVE CORPORATION
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13
MODULATORS - SMT
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Output Noise vs. LO Power
Over Temperature@ 2100 MHz Output Noise vs. LO Power
Over Supply@ 2100 MHz
Sideband Suppression*
vs. LO Power@ 2100 MHz Carrier Suppression*
vs. LO Power@ 2100 MHz
Output IP3 & Output Power vs.
LO Power Over Temperature@ 2100 MHz Output IP3 & Output Power vs.
LO Power Over Supply@ 2100 MHz
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
SIDEBAND SUPPRESSION (dBc)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
CARRIER SUPPRESSION (dBc)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT NOISE (dBm/Hz)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT NOISE (dBm/Hz)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
* See note titled “Calibrated vs. Uncalibrated test results” herein.
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MODULATORS - SMT
13
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Cellular CDMA @ 880 MHz
ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V PCS CDMA @ 1960 MHz
ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V
W-CDMA @ 1960 MHz
ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V W-CDMA @ 2140 MHz
ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V
-100
-90
-80
-70
-60
-50
-40
-30
-20
879 879.3 879.5 879.8 880 880.3 880.5 880.8 881
POWER (dBm)
FREQUENCY (MHz)
CP = -15dBm
ACPR = -72.3dBc CP = -15dBm
ACPR = -72dBc
-100
-90
-80
-70
-60
-50
-40
-30
-20
1959 1959.25 1959.5 1959.75 1960 1960.25 1960.5 1960.75 1961
POWER (dBm)
FREQUENCY (MHz)
CP = -18.42dBm
ACPR = -71.5dBc CP = -18.42dBm
ACPR = -71.5dBc
-100
-90
-80
-70
-60
-50
-40
-30
-20
1955 1956 1957 1958 1959 1960 1961 1962 1963 1964 1965
POWER (dBm)
FREQUENCY (MHz)
CP = -17.3dBm
ACPR = -59.7dBc CP = -17.3dBm
ACPR = -59.8dBc
-100
-90
-80
-70
-60
-50
-40
-30
-20
2135 2136 2137 2138 2139 2140 2141 2142 2143 2144 2145
POWER (dBm)
FREQUENCY (MHz)
CP = -14.4Bm
ACPR = -59.2dBc CP = -14.4dBm
ACPR = -59.8dBc
Note 1: W-CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using “Test Model 1 with 64 channels”
settings in the Agilent E3844C.
Note 2: CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using the “9 channels forward” settings in the
Agilent E3844C (pilot, paging, sync and 6 traffi c channels).
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MODULATORS - SMT
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Absolute Maximum Ratings
Vcc1, Vcc2, VB1, VB2 -0.5 to +6V
LO Input Power +10 dBm Max.
Baseband Input Voltage
(Reference to GND) -0.5 to +1.8V
Channel Temperature 150 °C
Continuous Pdiss (T = 85°C)
(Derate 43.5 mW/°C above 85°C) 2.83 W atts
Thermal Resistance (Rth)
(junction to lead) 23 °C/Watt
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +85 °C
Outline Drawing
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
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MODULATORS - SMT
13
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Pin Number Function Description Interface Schematic
1, 4, 9, 12 GND These pins and the ground paddle must be connected to a
high quality RF/DC ground.
2, 3 LOP, LON
Differential LO input ports. This device may be driven in either
differential or single ended mode. In single ended mode, one
port should be driven by the LO source while the other port
may be terminated with a 50Ω resistor to ground. An external
shunt 68Ω resistor is used to improve VSWR, while an
external 100 pF capacitor is required to prevent DC supply
voltage from appearing on the customer’s PC board.
5 VB2
Bias Voltage for the LO stage. This voltage will affect the
Sideband Suppression, the Output Noise Floor and the
Power Consumption. The ideal voltage range for this port is
between +2.7 Vdc and +3.0 Vdc. The nominal current for this
port is 5.3 mA.
6, 7 Qn, Qp
Differential Quadrature baseband input. These are high
impedance por ts. The nominal recommended bias voltage is
between 1.0 - 1.15V. The nominal recommended baseband
input voltage is 800 mV peak to peak differential. By
adjusting the DC bias voltage on ports Qn & Qp, the Carrier
Suppression of the device can be optimized for a specifi c
frequency band and LO power le v el. The typical offset v oltage
for optimization is less than 5 mV.
The amplitude and phase difference between the I and Q
inputs can be adjusted in order to optimize the Sideband
Suppression for a specifi c frequency band and LO power
level.
8 VB1 Bias Voltage for the output stage. This voltage should be
connected to the Vcc supply. Nominal supply voltage is 3.3
Vdc. The nominal current for this port is 2.4 mA.
10 N/C No connect.
11 RFP
RF Output port. This port is matched to 50Ω. A series
capacitor should be connected to this por t in order to prevent
the DC supply voltage from appearing on the customer’s PC
board.
Pin Descriptions
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13
MODULATORS - SMT
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Pin Descriptions (continued)
Pin Number Function Description Interface Schematic
13 Vcc1 Supply voltage f or the mix er and output stages. Set to 3.3V for
nominal operation. The nominal current for this port is 37 mA.
14, 15 Ip, In
Differential In-Phase baseband input. These are high
impedance ports. The nominal recommended bias voltage
is between 1.0 - 1.15V.The nominal recommened baseband
input voltage is 800 mV peak to peak diff erential. By adjusting
the DC bias voltage on ports In & Ip, the Carrier Suppression
of the device can be optimized for a specifi c frequency band
and LO power level. The typical offset v oltage for optimization
is less than 5 mV.
The amplitude and phase difference between the I and Q
inputs can be adjusted in order to optimize the Sideband
Suppression for a specifi c frequency band and LO power
level.
16 Vcc2 Supply voltage for the LO stage. Set to 3.3V for nominal
operation. The nominal current for this port is 64 mA.
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MODULATORS - SMT
13
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Item Description
J1 - J8 PC Mount SMA Connector
J9 - J12 DC Molex Connector
C1, C2, C7 100 pF Chip Capacitor, 0402 Pkg.
C3, C6, C8, C11 1000 pF Chip Capacitor, 0402 Pkg.
C4, C5, C9, C10 10 pF Chip Capacitor, 0402 Pkg.
C12 - C15 4.7 uF, Case A, Tantulum
R1, R2 68 Ohms, 0402 Pkg.
R3 62 Ohms, 0402 Pkg.
U1 HMC495LP3 Modulator
PCB* 107309 Eval Board
* Circuit Board Material: Rogers 4350
Evaluation PCB
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected directly
to the ground plane similar to that shown. A suffi cient
number of VIA holes should be used to connect the top
and bottom ground planes. The evaluation circuit board
shown is available from Hittite upon request.
List of Material
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13
MODULATORS - SMT
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
HMC495LP3
v00.0803
Application & Evaluation PCB Schematic
Note:
Baseband input frequency range is dependent on value of C4, C5, C9 and C10. The value of 10 pF was chosen to give a typical
response of DC - 250 MHz. Input frequency range can be extended up to 1 GHz with possible degradation of LO leakage and
broadband noise fl oor response by decreasing the value of C4, C5, C9 & C10.
Characterization Set-up
