Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1Publication Order Number:
MBR0540T1/D
MBR0540T1G,
NRVB0540T1G,
MBR0540T3G,
NRVB0540T3G
Surface Mount
Schottky Power Rectifier
SOD−123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier
principle with a barrier metal that produces optimal forward voltage
drop−reverse current tradeoff. Ideally suited for low voltage, high
frequency rectification, or as a free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package provides an alternative to the
leadless 34 MELF style package.
Features
Guardring for Stress Protection
Very Low Forward Voltage
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Device Marking: B4
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
B4 = Device Code
M = Date Code
G= Pb−Free Package
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES, 40 VOLTS
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
MBR0540T1G SOD−123
(Pb−Free)
3,000/Tape & Reel
(8 mm Tape, 7” Real)
MBR0540T3G SOD−123
(Pb−Free)
10,000/Tape & Reel
(8 mm Tape, 13” Real)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NRVB0540T1G SOD−123
(Pb−Free)
3,000/Tape & Reel
(8 mm Tape, 7” Real)
NRVB0540T3G SOD−123
(Pb−Free)
10,000/Tape & Reel
(8 mm Tape, 13” Real)
B4MG
G
1
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 V
Average Rectified Forward Current
(At Rated VR, TC = 115C)
IO0.5
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115C)
IFRM 1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 5.5
A
Storage/Operating Case Temperature Range Tstg, TC−55 to +150 C
Operating Junction Temperature TJ−55 to +150 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
1000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Rtjl
Rtja
118
206
C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3) vFTJ = 25C TJ = 100CV
(iF = 0.5 A)
(iF = 1 A)
0.51
0.62
0.46
0.61
Maximum Instantaneous Reverse Current (Note 3) IRTJ = 25C TJ = 100CmA
(VR = 40 V)
(VR = 20 V)
20
10
13,000
5,000
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
0.2
10
1.0
0.1
0.6 1.20.4 0.8 1.0
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
0.1
0.6 1.20.4 0.8
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TJ = 125C
TJ = 100C
TJ = -40C
TJ = 25C
TJ = 125C
TJ = 100C
TJ = 25C
100
1.0
25C
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
http://onsemi.com
3
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
400
VR, REVERSE VOLTAGE (VOLTS)
100E-3
1.0E-3
100E-6
10E-6
1.0E-6
100E-9
VR, REVERSE VOLTAGE (VOLTS)
I
10 20 30
, REVERSE CURRENT (AMPS)
R
400
I
10 20 30
, MAXIMUM REVERSE CURRENT (AMPS)
R
TJ = 125C
TJ = 100C
TJ = 25C
TJ = 100C
TJ = 25C
10E-3
100E-3
1.0E-3
100E-6
10E-6
1.0E-6
100E-9
10E-3
Figure 5. Current Derating Figure 6. Forward Power Dissipation
20 600
TL, LEAD TEMPERATURE (C)
0.8
0.4
0.3
0.2
0.1
0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.10
0.45
0.40
0.35
0.15
0.05
0
0.440
, AVERAGE FORWARD CURRENT (AMPS)IO
80 120100
0.5
0.2 0.3 0.5 0.8
0.10
PFO, AVERAGE POWER DISSIPATION (WATTS)
140
0.6
SQUARE WAVE dc
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
SQUARE WAVE
dc
0.7
0.30
0.20
0.25
0.6 0.7
FREQ = 20 kHz
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
300
VR, REVERSE VOLTAGE (VOLTS)
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
25 400
118
114
112
110
C, CAPACITANCE (pF)
T
155.0 10 20 25 35 40 30 355.0 10 2015
116
120
126
, DERATED OPERATING TEMPERATURE ( C)
J
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any
reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as
TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 118C/W
180C/W
149C/W
206C/W
228C/W
TJ = 25C
122
124
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
http://onsemi.com
4
Figure 9. Thermal Response Junction to Lead
Figure 10. Thermal Response Junction to Ambient
1000.10.00001
T, TIME (s)
1E+00
1E-01
1E-02
1,000
R
0.0001 0.001 0.01 1.0 10
1E-03
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(T)
T, TIME (s)
1E+00
1E-01
1E-02
R
1E-03
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(T)
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
1000.10.00001 1,0000.0001 0.001 0.01 1.0 10
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
http://onsemi.com
5
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR0540T1/D
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