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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics (trr < 30ns). It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC This device is intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated * Planar Construction * Qualified to AEC Q101 * RoHS Compliant Applications * Switching Power Supplies Formerly developmental type TA49057. * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRD660S9A_F085 PACKAGE BRAND TO-252 RHR660 Packaging Symbol JEDEC STYLE TO-252 K CATHODE (FLANGE) CATHODE A Absolute Maximum Ratings ANODE TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 152oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG (c)2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 600 600 600 6 UNITS V V V A 12 A 60 A 50 10 W mJ oC -55 to 175 300 260 oC oC RHRD660S9A_F085 Rev.C2 RHRD660S9A_F085 Electrical Specifications SYMBOL TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP MAX UNITS IF = 6A - - 2.1 V IF = 6A, TC = 150oC - - 1.7 V VR = 600V - - 100 A VR = 600V, TC = 150oC - - 500 A IF = 1A, dIF/dt = 200A/s - - 30 ns IF = 6A, dIF/dt = 200A/s - - 35 ns ta IF = 6A, dIF/dt = 200A/s - 16 - ns tb IF = 6A, dIF/dt = 200A/s - 8.5 - ns QRR IF = 6A, dIF/dt = 200A/s - 45 - nC VR = 10V, IF = 0A - 20 - pF - - 3 oC/W VF IR trr CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 30 1000 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 175oC 10 175oC 100oC 25oC 1 0.5 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2011 Fairchild Semiconductor Corporation 3 100 100oC 10 1 0.1 25oC 0.01 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE RHRD660S9A_F085 Rev. C2 RHRD66 RHRD660S9A_F085 Typical Performance Curves (Continued) 30 50 TC = 25oC, dIF/dt = 200A/s TC = 100oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 25 trr 20 15 ta 10 tb 5 0 0.5 1 40 trr 30 ta 20 tb 10 0 0.5 6 1 IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) 75 t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/s 60 trr 45 30 ta tb 15 0 0.5 1 6 6 6 5 DC 4 SQ. WAVE 3 2 1 0 140 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 Rev. C2 RHRD660S9A_F085 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 20mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2011 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRD660S9A_F085 Rev.C2 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPSTM Power-SPMTM AccuPowerTM The Power Franchise(R) The Right Technology for Your SuccessTM F-PFSTM PowerTrench(R) Auto-SPMTM (R) PowerXSTM FRFET(R) AX-CAPTM* Programmable Active DroopTM Global Power ResourceSM BitSiC(R) (R) Build it NowTM Green FPSTM QFET TinyBoostTM QSTM CorePLUSTM Green FPSTM e-SeriesTM TinyBuckTM Quiet SeriesTM CorePOWERTM GmaxTM TinyCalcTM RapidConfigureTM CROSSVOLTTM GTOTM TinyLogic(R) TM CTLTM IntelliMAXTM TINYOPTOTM Current Transfer LogicTM ISOPLANARTM TinyPowerTM Saving our world, 1mW/W/kW at a timeTM DEUXPEED(R) MegaBuckTM TinyPWMTM Dual CoolTM SignalWiseTM MICROCOUPLERTM TinyWireTM EcoSPARK(R) SmartMaxTM MicroFETTM TranSiC(R) EfficentMaxTM SMART STARTTM MicroPakTM TriFault DetectTM (R) ESBCTM SPM MicroPak2TM TRUECURRENT(R)* STEALTHTM MillerDriveTM (R) SerDesTM (R) SuperFET MotionMaxTM SuperSOTTM-3 Motion-SPMTM Fairchild(R) SuperSOTTM-6 mWSaverTM Fairchild Semiconductor(R) UHC(R) SuperSOTTM-8 OptiHiTTM FACT Quiet SeriesTM (R) Ultra FRFETTM SupreMOS(R) OPTOLOGIC FACT(R) UniFETTM OPTOPLANAR(R) SyncFETTM FAST(R) (R) VCXTM Sync-LockTM FastvCoreTM VisualMaxTM (R)* FETBenchTM XSTM FlashWriter(R) * PDP SPMTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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