BT138-800G
4Q Triac
Rev.01 - 19 March 2018 Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended
for use in applications requiring high bidirectional transient and blocking voltage
capability and high thermal cycling performance. Typical applications include motor
control, industrial and domestic lighting, heating and static switching.
2. Features and benets
• High blocking voltage capability
• Least sensitive gate for highest noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
3. Applications
• General purpose motor control
• General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
VDRM repetitive peak o-state
voltage
800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C;
Fig. 1; Fig. 2; Fig. 3
12 A
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
95 A
Tj junction temperature 125 °C
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- 5 50 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- 8 50 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- 10 50 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
- 22 100 mA
Dynamic characteristics
dVD/dt rate of rise of o-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200 250 - V/μs
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5. Pinning information
6. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 T1 main terminal 1
12
mb
3
sym051
T1
G
T2
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main terminal 2
Type number Package
Name Description Version
BT138-800G TO-220AB plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
SOT78
Table 3. Ordering information
7. Marking
Type number Marking codes
BT138-800G BT138-800G
Table 4. Marking codes
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4Q Triac
BT138-800G
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8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
VDRM repetitive peak o-state
voltage
800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C;
Fig 1; Fig 2; Fig 3
12 A
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig 4; Fig 5
95 A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
105 A
I2t I2t for fusing tp = 10 ms; sine-wave pulse 45 A2s
dIT/dt rate of rise of on-state
current
IG = 0.1 A; T2+ G+ 50 A/μs
IG = 0.1 A; T2+ G- 50 A/μs
IG = 0.1 A; T2- G- 50 A/μs
IG = 0.2 A; T2- G+ 10 A/μs
IGM peak gate current 2 A
PGM peak gate power 5 W
PG(AV) average gate power over any 20 ms period 0.5 W
Tstg storage temperature -40 to 150 °C
Tj junction temperature 125 °C
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Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; Tmb = 99 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
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f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
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9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
full cycle; Fig 6 - - 1.5 K/W
half cycle; Fig 6 - - 2 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air - 60 - K/W
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
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10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- 5 50 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- 8 50 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- 10 50 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
- 22 100 mA
IL latching current VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
- 7 60 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
- 20 90 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
- 8 60 mA
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
- 10 90 mA
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 6 60 mA
VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V
VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
- 0.7 1 V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V
ID o-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of o-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200 250 - V/μs
tgt gate-controlled turn-on
time
ITM = 16 A; VD = 800 V; IG = 0.1 A; dIG/
dt = 5 A/μs
- 2 - μs
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Fig. 9. Normalized holding current as a function of
junction temperature
Vo = 1.175 V; Rs = 0.0316 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
Fig. 8. Normalized latching current as a function of
junction temperature
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
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Fig. 11. Normalized gate trigger voltage as a function of junction temperature
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REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IECJEDEC JEITA
SOT78SC-46
3-lead TO-220AB
SOT78
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT A
mm 4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A1
DIMENSIONS (mm are the original dimensions)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0510 mm
scale
b b1(2)
1.6
1.0
c D
1.3
1.0
b2(2)D1E e
2.54
L L1(1)L2(1)
max.
3.0
p q
3.0
2.7
Q
2.6
2.2
D
D1
q
p
L
123
L1(1)
b1(2)
(3×)
b2(2)
(2×)
ee
b(3×)
AE
A1
c
Q
L2(1)
mounting
base
11. Package outline
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12. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1 lease consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
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detailed and full information. For detailed and full information see the
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Product data sheet.
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Applications — Applications that are described herein for any of these
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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]P
WeEn Semiconductors BT138-800G
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BT138-800G
Product
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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13. Contents
1. General description .......................................................1
2. Features and benets ...................................................1
3. Applications ...................................................................1
4. Quick reference data ..................................................... 1
5. Pinning information .......................................................2
6. Ordering information .....................................................2
7. Marking ...........................................................................2
8. Limiting values ..............................................................3
9. Thermal characteristics ................................................6
10. Characteristics.............................................................7
11. Package outline .........................................................10
12. Legal information ...................................................... 11
13. Contents ..................................................................... 13
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales oce addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 19 March 2018
