LAB
SEME
D2213UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/96
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage *
BVGSS Gate – Source Breakdown Voltage *
ID(sat) Drain Current *
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
83W
40V
±20V
8A
–65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(
2 pls
)
K
23
E
1
G
(
4 pls
)
54
D
N
M
JIH
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
DK
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
PIN 2 DRAIN 1
PIN 4 GATE 2
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS
from 1MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
DIM mm Tol. Inches Tol.
A 6.45 0.13 0.254 0.005
B 1.65R 0.13 0.065R 0.005
C 45° 5° 45° 5°
D 16.51 0.76 0.650 0.03
E 6.47 0.13 0.255 0.005
F 18.41 0.13 0.725 0.005
G 1.52 0.13 0.060 0.005
H 4.82 0.25 0.190 0.010
I 24.76 0.13 0.975 0.005
J 1.52 0.13 0.060 0.005
K 0.81R 0.13 0.032R 0.005
M 0.13 0.02 0.005 0.001
N 2.16 0.13 0.085 0.005
* Per Side
ROHS COMPLIANT
Parameter Test Conditions Min. Typ. Max. Unit
LAB
SEME
D2213UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/96
40
4
4
0.5 7
0.72
10
40
20:1
48
40
4
VGS = 0 ID= 10mA
VDS = 12.5V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 0.8A
PO= 20W
VDS = 12.5V IDQ = 0.8A
f = 1GHz
VDS = 0 VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS Common Source Power Gain
ηDrain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case Thermal Resistance Junction – Case Max. 2.1°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤2%
TOTAL DEVICE
PER SIDE
PER SIDE
