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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM2665

SNVS009H –NOVEMBER 1999–REVISED MARCH 2016

LM2665 Switched Capacitor Voltage Converter

1 Features

1• Input Voltage for Voltage Doubler: 2.5 V to 5.5 V

• Voltage Divider Splits Voltage: 1.8 V to 11 V

• Doubles or Splits Input Supply Voltage

• 12-ΩTypical Output Impedance

• 90% Typical Conversion Efficiency at 40 mA

• 1-µA Typical Shutdown Current

2 Applications

• Cellular Phones

• Pagers

• PDAs

• Operational Amplifier Power Suppliers

• Interface Power Suppliers

• Handheld Instruments

• Fire Detection and Notification

• Industrial Handheld Radios

• Blood Pressure Monitors

3 Description

The LM2665 CMOS charge-pump voltage converter

operates as a voltage doubler for an input voltage in

the range of 2.5 V to 5.5 V. Two low-cost capacitors

and a diode (needed during start-up) are used in this

circuit to provide up to 40 mA of output current. The

LM2665 can also work as a voltage divider to split a

voltage in the range of 1.8 V to 11 V in half.

The LM2665 operates at 160-kHz oscillator frequency

to reduce output resistance and voltage ripple. With

an operating current of only 650 µA (operating

efficiency greater than 90% with most loads) and

1-µA typical shutdown current, the LM2665 provides

ideal performance for battery powered systems.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

LM2665 SOT-23 (6) 2.90 mm × 1.60 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Voltage Doubler

Splitting Vin in Half

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Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Typical Characteristics ............................................. 5

7 Parameter Measurement Information .................. 7

7.1 Test Circuit................................................................ 7

8 Detailed Description.............................................. 8

8.1 Overview................................................................... 8

8.2 Functional Block Diagram......................................... 8

8.3 Feature Description................................................... 8

8.4 Device Functional Modes.......................................... 8

9 Application and Implementation .......................... 9

9.1 Application Information.............................................. 9

9.2 Typical Applications .................................................. 9

10 Power Supply Recommendations ..................... 12

11 Layout................................................................... 13

11.1 Layout Guidelines ................................................. 13

11.2 Layout Example .................................................... 13

12 Device and Documentation Support................. 14

12.1 Community Resources.......................................... 14

12.2 Trademarks........................................................... 14

12.3 Electrostatic Discharge Caution............................ 14

12.4 Glossary................................................................ 14

13 Mechanical, Packaging, and Orderable

Information........................................................... 14

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision G (July 2015) to Revision H Page

• Added several new "Applications" to page 1.......................................................................................................................... 1

Changes from Revision F (May 2013) to Revision G Page

• Added Pin Configuration and Functions section, ESD Rating table, Feature Description ,Device Functional Modes,

Application and Implementation,Power Supply Recommendations,Layout,Device and Documentation Support, and

Mechanical, Packaging, and Orderable Information sections................................................................................................ 1

Changes from Revision E (May 2013) to Revision F Page

• Changed layout of National Data Sheet to TI format ........................................................................................................... 12

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5 Pin Configuration and Functions

DBV Package

6-Pin SOT-23

Top View

Pin Functions

PIN TYPE DESCRIPTION

NO. NAME VOLTAGE DOUBLER VOLTAGE SPLIT

1 V+ Power Power supply positive voltage input Positive voltage output

2 GND Ground Power supply ground input Same as doubler

3 CAP−Power Connect this pin to the negative terminal of the

charge-pump capacitor. Same as doubler

4 SD Input Shutdown control pin, tie this pin to ground in

normal operation. Same as doubler

5 OUT Power Positive voltage output Power supply positive voltage input

6 CAP+ Power Connect this pin to the positive terminal of the

charge-pump capacitor. Same as doubler

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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and must be

avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.

(4) The maximum allowable power dissipation is calculated by using PD-MAX = (TJ-MAX −TA)/RθJA, where TJ-MAX is the maximum junction

temperature, TAis the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)

MIN MAX UNIT

V+ to GND voltage 5.8 V

OUT to GND voltage 11.6 V

OUT to V+ voltage 5.8 V

SD (GND −0.3 V) (V+ + 0.3 V)

V+ and OUT continuous output current 50 mA

Output short-circuit duration to GND(3) 1 sec

Continuous power dissipation (TA= 25°C)(4) 600 mW

TJ-MAX(4) 150 °C

Lead temperature (soldering, 10 sec.) 300 °C

Storage temperature, Tstg −65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings VALUE UNIT

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT

Operating junction temperature –40 85 °C

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

THERMAL METRIC(1) LM2665

UNITDBV (SOT-23)

6 PINS

RθJA Junction-to-ambient thermal resistance 210 °C/W

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(1) In the test circuit, capacitors C1and C2are 3.3-µF, 0.3-Ωmaximum ESR capacitors. Capacitors with higher ESR increase output

resistance, reduce output voltage and efficiency.

(2) Min. and Max. limits are ensured by design, test, or statistical analysis.

(3) Typical numbers are not ensured but represent the most likely norm.

(4) The minimum input high for the SD pin equals 40% of V+.

(5) The maximum input low for the SD pin equals 20% of V+.

(6) Specified output resistance includes internal switch resistance and capacitor ESR. See the details in Application and Implementation for

simple negative voltage converter.

(7) The output switches operate at one half of the oscillator frequency, ƒOSC = 2ƒSW.

6.5 Electrical Characteristics

MIN and MAX limits apply over the full operating temperature range. Unless otherwise specified: TJ= 25°C, V+ = 5 V,

C1= C2= 3.3 μF.(1)

PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT

V+ Supply voltage 2.5 5.5 V

IQSupply current No load 650 1250 µA

ISD Shutdown supply current 1 µA

VSD Shutdown pin input voltage Normal operation 2(4) V

Shutdown mode 0.8(5)

ILOutput current 40 mA

RSW Sum of the Rds(on)of the four internal

MOSFET switches IL= 40 mA 3.5 8Ω

ROUT Output resistance(6) IL= 40 mA 12 25 Ω

ƒOSC Oscillator frequency See(7) 80 160 kHz

ƒSW Switching frequency See(7) 40 80 kHz

PEFF Power efficiency RL(1 kΩ) between GND and OUT 90% 94%

IL= 40 mA to GND 90%

VOEFF Voltage conversion efficiency No load 99% 99.96%

6.6 Typical Characteristics

(Circuit of Figure 9, V+ = 5 V unless otherwise specified)

Figure 1. Supply Current vs Supply Voltage Figure 2. Supply Current vs Temperature

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Typical Characteristics (continued)

(Circuit of Figure 9, V+ = 5 V unless otherwise specified)

Figure 3. Output Source Resistance vs Supply Voltage Figure 4. Output Source Resistance vs Temperature

Figure 5. Output Voltage Drop vs Load Current Figure 6. Oscillator Frequency vs Supply Voltage

Figure 7. Oscillator Frequency vs Temperature Figure 8. Shutdown Supply Current vs Temperature

C1*

VIN

CIN*

VOUT

LM2665

V+ OUT

CAP+

CAP-

GND

C2*ROUT

*CIN, C1 and C2 are 3.3 µF OS-CON capacitors.

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7 Parameter Measurement Information

7.1 Test Circuit

Figure 9. LM2665 Test Circuit

LM2665

V+

CAP+

OUT

GND

OSCILLATOR Switch Array

Switch Drivers CAP-

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SNVS009H –NOVEMBER 1999–REVISED MARCH 2016

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8 Detailed Description

8.1 Overview

The LM2665 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the

range of 2.5 V to 5.5 V. Two low-cost capacitors and a diode (needed during start-up) are used in this circuit to

provide up to 40 mA of output current. The LM2665 can also work as a voltage divider to split a voltage in the

range of 1.8 V to 11 V in half.

8.2 Functional Block Diagram

8.3 Feature Description

8.3.1 Circuit Description

The LM2665 contains four large CMOS switches which are switched in a sequence to double the input supply

voltage. Energy transfer and storage are provided by external capacitors. Figure 10 illustrates the voltage

conversion scheme. When S2and S4are closed, C1charges to the supply voltage V+. During this time interval,

switches S1and S3are open. In the next time interval, S2and S4are open; at the same time, S1and S3are

closed, the sum of the input voltage V+ and the voltage across C1gives the 2-V+ output voltage when there is no

load. The output voltage drop when a load is added is determined by the parasitic resistance (RDS(on) of the

MOSFET switches and the ESR of the capacitors) and the charge transfer loss between capacitors. Details are

discussed in Application and Implementation.

Figure 10. Voltage Doubling Principle

8.4 Device Functional Modes

8.4.1 Shutdown Mode

A shutdown (SD) pin is available to disable the device and reduce the quiescent current to 1 µA. In normal

operating mode, the SD pin is connected to ground. The device can be brought into the shutdown mode by

applying to the SD pin a voltage greater than 40% of the V+ pin voltage.

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9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers must

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The LM2665 provides a simple and efficient means of creating an output voltage level equal to twice that of the

input voltage. Without the need of an inductor, the application solution size can be reduced versus the magnetic

DC-DC converter solution.

9.2 Typical Applications

9.2.1 Voltage Doubler

The main application of the LM2665 is to double the input voltage. The range of the input supply voltage is 2.5 V

to 5.5 V.

Figure 11. Voltage Doubler

9.2.1.1 Design Requirements

Example requirements for LM2665 device applications:

DESIGN PARAMETER EXAMPLE VALUE

Input voltage range 2.5 V to 5.5 V

Output current 0 mA to 40 mA

Boost switching frequency 80 kHz

4176 = 4176 KBA=? D ./2665

0QI>AN KB &ARE?AO

ß=2

176

=+.

24.

24.++.

24176 ++3(8+)

4+22.' =

&15% × %2

+ 2 × +.× '54%2

4176  2459 +

&15% × %

+ 4'54%1+ '54%2

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9.2.1.2 Detailed Design Requirements

9.2.1.2.1 Positive Voltage Doubler

The output characteristics of this circuit can be approximated by an ideal voltage source in series with a

resistance. The voltage source equals 2 V+. The output resistance ROUT is a function of the ON resistance of the

internal MOSFET switches, the oscillator frequency, the capacitance and equivalent series resistance (ESR) of

C1and C2. Since the switching current charging and discharging C1is approximately twice as the output current,

the effect of the ESR of the pumping capacitor C1will be multiplied by four in the output resistance. The output

capacitor C2is charging and discharging at a current approximately equal to the output current, therefore, its

ESR only counts when in the output resistance. A good approximation of ROUT is:

where

• RSW is the sum of the ON resistance of the internal MOSFET switches shown in Figure 10. (1)

The peak-to-peak output voltage ripple is determined by the oscillator frequency, the capacitance and ESR of the

output capacitor C2:

(2)

High capacitance, low-ESR capacitors can reduce both the output resistance and the voltage ripple.

The Schottky diode D1is only needed for start-up. The internal oscillator circuit uses the OUT pin and the GND

pin. Voltage across OUT and GND must be larger than 1.8 V to insure the operation of the oscillator. During

start-up, D1is used to charge up the voltage at the OUT pin to start the oscillator; also, it protects the device from

turning-on its own parasitic diode and potentially latching-up. Therefore, the Schottky diode D1must have

enough current carrying capability to charge the output capacitor at start-up, as well as a low forward voltage to

prevent the internal parasitic diode from turning-on. A Schottky diode like 1N5817 can be used for most

applications. If the input voltage ramp is less than 10 V/ms, a smaller Schottky diode like MBR0520LT1 can be

used to reduce the circuit size.

9.2.1.2.2 Capacitor Selection

As discussed in Positive Voltage Doubler, the output resistance and ripple voltage are dependent on the

capacitance and ESR values of the external capacitors. The output voltage drop is the load current times the

output resistance, and the power efficiency is:

where

• IQ(V+) is the quiescent power loss of the IC device; and

• IL2Rout is the conversion loss associated with the switch on-resistance, the two external capacitors and their

ESRs. (3)

The selection of capacitors is based on the specifications of the dropout voltage (which equals IOUT ROUT), the

output voltage ripple, and the converter efficiency. Low ESR capacitors are recommended to maximize efficiency,

reduce the output voltage drop and voltage ripple.

9.2.1.2.3 Paralleling Devices

Any number of LM2665 devices can be paralleled to reduce the output resistance. Each device must have its

own pumping capacitor C1, while only one output capacitor COUT is needed as shown in Figure 12. The

composite output resistance is:

(4)

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Figure 12. Lowering Output Resistance By Paralleling Devices

9.2.1.2.4 Cascading Devices

Cascading the LM2665 devices is an easy way to produce a greater voltage (a two-stage cascade circuit is

shown in Figure 13).

The effective output resistance is equal to the weighted sum of each individual device:

ROUT = 1.5 ROUT_1 + ROUT_2 (5)

Note that the increasing of the number of cascading stages is pracitically limited since it significantly reduces the

efficiency, increases the output resistance and output voltage ripple.

Figure 13. Increasing Output Voltage By Cascading Devices

9.2.1.2.5 Regulating VOUT

It is possible to regulate the output of the LM2665 by use of a low dropout regulator (such as LP2980-5.0). The

whole converter is depicted in Figure 14.

A different output voltage is possible by use of LP2980-3.3, LP2980-3.0, or LP2980-ADJ.

Note that the following conditions must be satisfied simultaneously for worst-case design:

2VIN_MIN > VOUT_MIN + VDROP_MAX (LP2980) + IOUT_MAX × ROUT_MAX (LM2665) (6)

2VIN_MAX < VOUT_MAX +VDROP_MIN (LP2980) + IOUT_MIN × ROUT_MIN (LM2665) (7)

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Figure 14. Generate a Regulated 5-V from 3-V Input Voltage

9.2.1.3 Application Curve

Figure 15. Efficiency vs Load Current

9.2.2 Splitting V+ In Half

Another interesting application shown in Splitting Vin in Half is using the LM2665 as a precision voltage divider.

This circuit can be derived from the voltage doubler by switching the input and output connections. In the voltage

divider, the input voltage applies across the OUT pin and the GND pin (which are the power rails for the internal

oscillator), therefore no start-up diode is needed. Also, since the off-voltage across each switch equals VIN/2, the

input voltage can be raised to 11 V.

Figure 16. Application Circuit for Splitting Voltage

10 Power Supply Recommendations

The LM2665 is designed to operate from as an inverter over an input voltage supply range between 2.5 V and

5.5 V when the LV pin is grounded. This input supply must be well regulated and capable to supply the required

input current. If the input supply is located far from the device, additional bulk capacitance may be required in

addition to the ceramic bypass capacitors.

V+

GND

LM2665

CAP-

CAP+

OUT

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11 Layout

11.1 Layout Guidelines

The high switching frequency and large switching currents of the LM2665 make the choice of layout important.

Use the following steps as a reference to ensure the device is stable and maintains proper LED current

regulation across its intended operating voltage and current range.

• Place CIN on the top layer (same layer as the LM2665) and as close to the device as possible. Connecting

the input capacitor through short, wide traces to both the V+ and GND pins reduces the inductive voltage

spikes that occur during switching which can corrupt the V+ line.

• Place COUT on the top layer (same layer as the LM2665) and as close as possible to the OUT and GND pin.

The returns for both CIN and COUT must come together at one point, as close to the GND pin as possible.

Connecting COUT through short, wide traces reduce the series inductance on the OUT and GND pins that can

corrupt the VOUT and GND lines and cause excessive noise in the device and surrounding circuitry.

• Place C1 on the top layer (same layer as the LM2665 device) and as close to the device as possible.

Connect the flying capacitor through short, wide traces to both the CAP+ and CAP– pins.

11.2 Layout Example

Figure 17. Typical Layout for LM2665

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12 Device and Documentation Support

12.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

12.2 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.3 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

12.4 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

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Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM2665M6 NRND SOT-23 DBV 6 1000 TBD Call TI Call TI -40 to 85 S04A

LM2665M6/NOPB ACTIVE SOT-23 DBV 6 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S04A

LM2665M6X NRND SOT-23 DBV 6 3000 TBD Call TI Call TI -40 to 85 S04A

LM2665M6X/NOPB ACTIVE SOT-23 DBV 6 3000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S04A

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

PACKAGE OPTION ADDENDUM

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Addendum-Page 2

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM2665M6 SOT-23 DBV 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2665M6/NOPB SOT-23 DBV 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2665M6X SOT-23 DBV 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2665M6X/NOPB SOT-23 DBV 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

PACKAGE MATERIALS INFORMATION

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Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM2665M6 SOT-23 DBV 6 1000 210.0 185.0 35.0

LM2665M6/NOPB SOT-23 DBV 6 1000 210.0 185.0 35.0

LM2665M6X SOT-23 DBV 6 3000 210.0 185.0 35.0

LM2665M6X/NOPB SOT-23 DBV 6 3000 210.0 185.0 35.0

PACKAGE MATERIALS INFORMATION

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Pack Materials-Page 2

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