EVB71102B-418-FSK-C - Melexis Technologies NV

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 1 of 14 EVB Description

Rev. 005 Feb./03

Features

! Double superhet architecture for high degree of image rejection

! FSK for digital data and FM reception for analog signal transmission

! FSK/FM demodulation with phase-coincidence demodulator

! Low current consumption in active mode and very low standby current

! Switchable LNA gain for improved dynamic range

! RSSI allows signal strength indication and ASK detection

! Surface mount package LQFP32

Ordering Information

Part No.

EVB71102-433-FSK EVB71102-315-FSK

EVB71102-433-ASK EVB71102-315-ASK

Application Examples

! General digital and analog 315 MHz or

433 MHz ISM band usage

! Low-power telemetry

! Alarm and security systems

! Remote Keyless Entry (RKE)

! Tire Pressure Monitoring System (TPMS)

! Garage door openers

! Home automation

! Pagers

Evaluation Board

General Description

The TH71102 FSK/FM/ASK double-conversion superheterodyne receiver IC is designed for applications in

the European 433 MHz industrial-scientific-medical (ISM) band, according to the EN 300 220 telecommuni-

cations standar d. It can also be used for any other system with carrier frequenc ies ranging from 300 MHz to

450 MHz (e.g. for applications in the US 315 MHz ISM band).

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 2 of 14 EVB Description

Rev. 005 Feb./03

Document Content

1 Theory of Operation...................................................................................................3

1.1 General..............................................................................................................................3

1.2 Technical Data Overview...................................................................................................3

1.3 Block Diagram....................................................................................................................4

1.4 Mode Configurations..........................................................................................................4

1.5 LNA GAIN Control..............................................................................................................4

1.6 Frequency Planning...........................................................................................................5

1.6.1 Selected Frequency Plans............................................................................................................5

2 FSK Application Circuits...........................................................................................6

2.1 PCB Top View for FSK Reception......................................................................................7

2.2 Board Component Values for FSK (Fig. 2).........................................................................8

3 ASK Application Circuits...........................................................................................9

3.1 PCB Top View for ASK Reception ...................................................................................10

3.2 Board Component Values for ASK (Fig. 3).......................................................................11

4 Package Dimensions...............................................................................................12

5 Reliability Information .............................................................................................13

6 ESD Precautions......................................................................................................13

7 Disclaimer.................................................................................................................14

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 3 of 14 EVB Description

Rev. 005 Feb./03

1 Theory of Operation

1.1 General

W ith the TH71102 receiver chip, various circuit con-

figurations c an be arranged in order to m eet a num -

ber of dif ferent custom er requirem ents. F or FM/FSK

reception the IF tank used in the phase coincidence

demodulator can be constituted either by a ceramic

resonator or an LC tank (optionally with a varactor

diode to create an AFC circuit). In ASK configura-

tion, the RSSI signal is feed to an ASK detector,

which is constituted by the operational amplifier.

Demodulation Type of receiver

FM / FSK narrow-band RX with

ceramic demodulation tank

FM / FSK wide-band RX with

LC demodulation tank

ASK RX with RSSI-based demodulation

The superheterodyne configuration is double conversion where MIX1 and MIX2 are driven by the internal

local oscillator signals LO1 and LO2, respectively. This allows a high degree of im age rejection, achieved in

conjunc tion with an RF front- end filter. Eff icient RF front-end f iltering is r ealized by using a SAW , ceram ic or

helix filter in front of the LNA and by adding an LC filter at the LNA output.

A single-conversion variant, called TH71101, is also available. Both Receiver ICs have the same die. At the

TH71101 the second mixer MIX2 operates as an amplifier.

The TH71102 receiver IC consists of the following building blocks:

" PLL synthesizer (PLL SYNTH) for generation of the first and second local oscillator signals LO1 and LO2

" Parts of the PLL SYNTH are the high-frequency VCO1, the feedback dividers DIV_8 and DIV_2,

a phase-frequency detector (PFD) with charge pump (CP) and a crystal-based reference oscillator (RO)

" Low-noise amplifier (LNA) for high-sensitivity RF signal reception

" First mixer (MIX1) for down-conversion of the RF signal to the first IF (IF1)

" Second mixer (MIX2) for down-conversion of the IF1 to the second IF (IF2)

" IF amplifier (IFA) to amplify and limit the IF2 signal and for RSSI generation

" Phase coincidence demodulator (DEMOD) with third mixer (MIX3) to demodulate the IF signal

" Operational amplifier (OA) for data slicing, filtering and ASK detection

" Bias circuitry for bandgap biasing and circuit shutdown

1.2 Technical Data Overview

! Input frequency range: 300 MHz to 450 MHz

! Power supply range: 2.3 V to 5.5 V @ ASK

! Temperature range: -40 °C to +85 °C

! Standby current: 50 nA

! Operating current: 6.5 mA at low gain mode

8.2 mA at high gain mode

! Sensitivity: -111 dBm 1) with 40 kHz IF filter BW

! Sensitivity: -104 dBm 2) with 150 kHz IF filter BW

! Range of first IF1: 10 MHz to 80 MHz

! Range of second IF2: 400 kHz to 22 MHz

! Maximum data rate: 80 kbit/s NRZ

! Maximum input level: -10 dBm at ASK

0 dBm at FSK

! Image rejection: > 65 dB (e.g. with SAW

front-end filter and at 10.7 MHz IF2)

! Spurious emission: < -70 dBm

! Input frequency acceptance: ±50 kHz

(with AFC option)

! RSSI range: 70 dB

! Frequency deviation range: ±4 kHz to ±120 kHz

! Maximum analog modulation frequency: 15 kHz

1) at ± 8 kHz FSK deviation, BER = 3⋅10-3, phase-coincidence demodulation and SAW front-end filter loss

2) at ± 50 kHz FSK deviation, BER = 3⋅10-3, phase-coincidence demodulation and SAW front-end filter loss

For more detailed information, please refer to the latest TH71102 data sheet revision.

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 4 of 14 EVB Description

Rev. 005 Feb./03

1.3 Block Diagram

Fig. 1: TH71102 block diagram

1.4 Mode Configurations

ENRX Mode Description

0 RX standby RX disabled

1 RX active RX enable

Note: ENRX are pulled down internally

1.5 LNA GAIN Control

VGAIN_LNA Mode Description

< 0.8 V HIGH GAIN LNA set to high gain

> 1.4 V LOW GAIN LNA set to low gain

Note: hysteresis between gain modes to ensure stability

IN_LNA

LNA MIX1 IFA

GAIN_LNA

OUT_LNA

FPC2

RSSI

OUT_IFA

IN_DEM

OUTP

OUTN

MIX3

21932

VEE_LNAC

VEE_MIX

VCC_LNA

VEE_LNA

IN_MIX1

VCC_MIX

813 15 16

ROLF

VCO1 RO

PFD

VCC_PLL

BIAS

ENRX

VCC_BIAS

VEE_BIAS

VEE_RO

OUT_MIX2

IN_IFA

VEE_IF

FBC1

OAP

OAN

OUT_OA

IF1P

IF1N

MIX2

IF1 IF2

DIV_8 DIV_2

LO1 LO2

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 5 of 14 EVB Description

Rev. 005 Feb./03

1.6 Frequency Planning

Frequency planning is straightforward for single-conversion applications because there is only one IF that

might be c hosen, and then the only possible choic e is low-side or high- side injection of the LO signal (which

is now the one and only LO signal in the receiver).

The receiver’s double-conversion architecture requires careful frequency planning. Besides the desired RF

input signal, there are a number of spurious signals that may cause an undesired response at the output.

Among them are the image of the RF signal (that must be suppressed by the RF front-end filter), spurious

signals injec ted to the firs t IF (IF 1) and their im ages which could be m ixed down to the sam e second IF (IF2)

as the desired RF signal (they must be suppressed by the LC filter at IF1 and/or by low-crosstalk design).

By configuring the TH71102 for double conversion and using its internal PLL s ynthesizer with fixed f eedback

divider ratios of N1 = 8 (DIV_8) and N2 = 2 (DIV_2), four types of down-conversion are possible: low-side

injection of LO1 and LO2 (low-low), LO1 low-side and LO2 high-side (low-high), LO1 high-side and LO2

low-side (high-low) or LO1 and LO2 high-side (high-high). T he following table sum m arizes some equations

that are useful to calculate the crystal reference f requency (REF), the first IF (IF1) and the VCO1 or f irst LO

frequency (LO1), respectively, for a given RF and second IF (IF2).

Injection type high-high low-low high-low low-high

REF (RF – IF2)/14 (RF – IF2)/18 (RF + IF2)/14 (RF + IF2)/18

LO1 16•REF 16•REF 16•REF 16•REF

IF1 LO1 – RF RF – LO1 LO1 – RF RF – LO1

LO2 2•REF 2•REF 2•REF 2•REF

IF2 LO2 – IF1 IF1 – LO2 IF1 – LO2 LO2 – IF1

1.6.1 Selected Frequency Plans

The following table depicts crystal, LO and image signals considering the examples of 315 MHz and

433.92 MHz RF reception at IF2 = 10.7 MHz.

Signal type RF =

315

MHz

RF =

315

MHz

RF =

315

MHz

RF =

315.92

MHz

RF =

433.92

MHz

RF =

433.92

MHz

RF =

433.92

MHz

RF =

433.92

MHz

Injection type high-high low-low high-low low-high high-high low-low high-low low-high

REF / MHz 21.73571 16.90556 23.26429 18.09444 30.23000 23.51222 31.75857 24.70111

LO1 / MHz 347.77143 270.48889 372.22857 289.51111 483.68000 376.19556 508.13714 395.21778

IF1 / MHz 32.77143 44.51111 57.22857 25.48889 49.76000 57.72444 74.21714 38.70222

LO2 / MHz 43.47143 33.81111 46.52857 36.18889 60.46000 47.02444 63.51714 49.40222

RF image/MHz 380.54286 225.97778 429.45714 264.02222 533.44000 318.47112 582.35428 356.51556

IF1 image/MHz 54.17143 23.11111 35.82857 46.88889 71.16000 36.32444 52.81717 60.10222

The selection of the reference crystal frequency is based on som e assumptions. As for exam ple: the first IF

and the image frequencies should not be in a radio band where strong interfering signals might occur

(because they could represent par asitic r eceiving signals ), the LO1 s ignal should be in the range of 300 MHz

to 450 MHz (because this is the optimum frequency range of the VCO1). Furthermore the first IF should be

as high as possible to achieve highest RF im age rej ec tion. The columns in bold depic t the s elect ed f requenc y

plans to receive at 315 MHz and 433.92 MHz, respectively.

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 6 of 14 EVB Description

Rev. 005 Feb./03

2 FSK Application Circuits

Fig. 2: Circuit diagram for FSK reception

C13

C12

C9 C11

C10

CERFIL

CB2

CB8 CB7

C7 C8

CERRES

CB3

OUTP

VEE

OUT_LNA

IN_MIX1

VEE

IF1P

IF1N

VCC

GAIN_LNA

VEE

OUT_MIX2

IN_IFA

FBC1

FBC2

VCC

OUT_IFA

VEE

IN_LNA

VCC

VEE

ENRX

VCC

VEE

OAP

OAN

OUT_OA

RSSI

81234567

TH71102

VCC

R_Q

L_OPT

C_OPT

CB5

XTAL C1

C15 C16C14

C_RO

GND

VCC

GND

ENRX

VCC

OUTN

GND

OUTP

GND

RSSI

GND

OUT_OA

GND

IN_LNA

SAWFIL

FSK output

CB1

L4 L5

CB4

CB6

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 7 of 14 EVB Description

Rev. 005 Feb./03

2.1 PCB Top View for FSK Reception

Board layout data in Gerber format is available

C_RO

R_Q

XTAL

Melexis

TH7111xx

Evaluation Board

TH711xx_ev03_EB_11/00_B

OUTN

ENRX

IN_LNA

VCC

OUTP

RSSI

OUT_OA

CB7

C10

C14

C15

C11

CERFIL

CB5

C16

CB4

CB3

CB2

CB1

C12

C13

CERRES

C7 C8

CB8

RF_input

TH71102

1724

32 9

CB6

L_OPT

C_OPT

SAWFIL

56 7

Board size is 44mm x 54mm

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 8 of 14 EVB Description

Rev. 005 Feb./03

2.2 Board Component Values for FSK (Fig. 2)

Part Size Value

@ 315 MHz

Value

@ 433.92 MHz Tolerance Description

C1 0805 15 pF 15 pF ±10% cryst al series capacitor

C2 0805 NIP NIP ±10% optional loop f i l ter capaci t or

C3 0805 1 nF 1 nF ±10% loop filter capaci t or

C4 0603 NIP 3.3 pF ±5% capacitor to m atch to S A W filter i nput

C5 0603 NIP 3.3 pF ±5% capacitor to m atch to S A W filter output

C6 0603 5.6 pF 4.7 pF ±5% LNA output t ank capaci t or

C7 0603 4.7 pF 2.2 pF ±5% MIX1 input matc hi ng capacitor

C8 0603 27 pF 27 pF ±5% IF1 tank capacitor

C9 0805 33 nF 33 nF ±10% IFA f eedback capacitor

C10 0603 1 nF 1 nF ±10% IFA f eedback capacitor

C11 0603 1 nF 1 nF ±10% IFA f eedback capacitor

C12 0603 1.5 pF 1.5 pF ±5% DEMOD phase-shift capacitor

C13 0603 680 pF 680 pF ±10% DE MOD c oupl i ng capacit or

CP 0805 10 – 12 pF 10 – 12 pF ±5% CERRES tuning capac i t or

C14 0805 10 – 47 pF 10 – 47 pF ±5% demodulator output low-pass capacitor,

depending on data rate

C15 0805 10 – 47 pF 10 – 47 pF ±5% demodulator output low-pass capacitor,

depending on data rate

C16 0603 1.5 nF 1.5 nF ±10% RSSI output low-pass c apacitor

CB1 to CB 5

CB7 to CB 8 0603 330 pF 330 pF ±10% blocking c apacitor for VCC

CB6 0805 33 nF 33 nF ±10% blocki ng capacit or f or VCC

R1 0805 10 kΩ10 kΩ±10% loop filter resistor

R2 0805 390 Ω390 Ω±5% CERFIL output mat ching resistor

L1 0603 56 nH 33 nH ±5% inductor to match S A W filter

L2 0603 56 nH 33 nH ±5% inductor to match S A W filter

L3 0603 22 nH 15 nH ±5% LNA output tank i nductor

L4 0805 100 nH 100 nH ±5% IF1 tank i nductor

L5 0805 100 nH 100 nH ±5% IF1 tank i nductor

L_OPT 1006 NIP NIP ±5% demodulator phas e shift i nductor, only

required at FSK/FM with LC resonator

C_OPT 3mm NIP NIP ±5% demodul ator phase shi f t capaci t or, only

required at FSK/FM with LC resonator

R_Q 0805 NIP NIP ±5% optional l ower-Q resistor, only

required at FSK/FM with LC resonator

C_RO 0805 330 pF 330 pF ±5% optional capaci tor

to couple external RO signal

XTAL HC49

SMD 23.26429 MHz @

RF = 315 MHz 23.51222 MHz @

RF = 433.92 MHz ±25ppm c al i br.

±30ppm t emp. fundament al -mode crystal, C load = 10 pF

to 15pF, C0, max = 7 pF, Rm, max = 50 Ω

B3555

(f0 = 433.92 MHz) B3dB = 860 kHz

±100 kHz

SAWFIL QCC8C

B3551

(f0 = 315.00 MHz) B3dB = 900 kHz

±175 kHz

low-loss SAW filter from EPCOS

Leaded

type SFE10.7MFP

@ BIF2 = 40 kHz SFE10.7MFP

@ BIF2 = 40 kHz TBD

CERFIL

SMD

type SFECV10.7MJS-A

@ BIF2 = 150 kHz SFECV10.7MJS-A

@ BIF2 = 150 kHz ±40 k Hz

ceramic filter from Murata

CERRES SMD type CDACV10.7MG18-A

Murata CDACV10.7MG18-A

Murata ceramic demodulator t ank, not required

at FSK/FM with LC resonator

NIP – not in place, may be used optionally

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 9 of 14 EVB Description

Rev. 005 Feb./03

3 ASK Application Circuits

Fig. 3: Circuit diagram for ASK reception

C9 C11

C10

CERFIL

CB2

CB8 CB6

C7 C8

CB4

OUTP

VEE

OUT_LNA

IN_MIX1

VEE

IF1P

IF1N

VCC

GAIN_LNA

VEE

OUT_MIX2

IN_IFA

FBC1

FBC2

VCC

OUT_IFA

VEE

IN_LNA

VCC

VEE

ENRX

VCC

VEE

OAP

OAN

OUT_OA

RSSI

81234567

TH71102

VCC

CB1

XTAL C1

C12

ASK output

C13

C_RO

GND

VCC

GND

ENRX

VCC

OUTN

GND

OUTP

GND

RSSI

GND

OUT_OA

GND

IN_LNA

SAWFIL

L4 L5

CB3

CB5

CB7

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 10 of 14 EVB Description

Rev. 005 Feb./03

3.1 PCB Top View for ASK Reception

Board layout data in Gerber format is available

C_RO

XTAL

Melexis

TH7111xx

Evaluation Board

TH711xx_ev03_EB_11/00_B

OUTN

ENRX

VCC

OUTP

RSSI

OUT_OA

CB7

C10

C12

C11

CERFIL

CB5

CB4

CB3

CB2

CB1

CB8

RF_input

1724

32 9

CB6

IN_LNA

SAWFIL

56 7

C13

Board size is 44mm x 54mm

TH71102

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 11 of 14 EVB Description

Rev. 005 Feb./03

3.2 Board Component Values for ASK (Fig. 3)

Part Size Value

@ 315 MHz

Value

@ 433.92 MHz Tolerance Description

C1 0805 15 pF 15 pF ±10% cryst al series capacitor

C2 0805 NIP NIP ±10% optional loop f i l ter capaci t or

C3 0805 1 nF 1 nF ±10% loop filter capaci t or

C4 0603 NIP 3.3 pF ±5% capacitor to m atch to S A W filter i nput

C5 0603 NIP 3.3 pF ±5% capacitor to m atch to S A W filter output

C6 0603 5,6 pF 4.7 pF ±5% LNA output t ank capaci t or

C7 0603 4.7 pF 2.2 pF ±5% MIX1 input matc hi ng capacitor

C8 0603 27 pF 27 pF ±5% IF1 tank capacitor

C9 0805 33 nF 33 nF ±10% IFA f eedback capacitor

C10 0603 1 nF 1 nF ±10% IFA f eedback capacitor

C11 0603 1 nF 1 nF ±10% IFA f eedback capacitor

C12 0805 1 nF to 100 nF 1 nF to 100 nF ±10% ASK dat a slicer capacitor, depending on

data rate

C13 0603 1.5 nF 1.5 nF ±10% RSSI output low-pass c apacitor

CB1 to CB 5

CB7 to CB 8 0603 330 pF 330 pF ±10% blocking c apacitor for VCC

CB6 0805 33 nF 33 nF ±10% blocki ng capacit or f or VCC

R1 0805 10 kΩ10 kΩ±10% loop filter resistor

R2 0805 390 Ω390 Ω±5% CERFIL output mat ching resistor

R3 0603 100 kΩ100 kΩ±5% ASK data slicer resis t or, depending on

data rate

L1 0603 56 nH 33 nH ±5% inductor to match S A W filter

L2 0603 56 nH 33 nH ±5% inductor to match S A W filter

L3 0603 22 nH 15 nH ±5% LNA output tank i nductor

L4 0805 100 nH 100 nH ±5% IF1 tank i nductor

L5 0805 100 nH 100 nH ±5% IF1 tank i nductor

C_RO 0805 330 pF 330 pF ±5% optional capaci tor

to couple external RO signal

XTAL HC49

SMD 23.26429 MHz

@ RF = 315 MHz 23.51222 MHz @

RF = 433.92 MHz ±25ppm c al i br.

±30ppm t emp. fundament al -mode crystal, C load = 10 pF

to 15pF, C0, max = 7 pF, Rm, max = 50 Ω

B3555

(f0 = 433.92 MHz) B3dB = 860 kHz

±100 kHz

SAWFIL QCC8C

B3551

(f0 = 315.00 MHz) B3dB = 900 kHz

±175 kHz

low-loss SAW filters from EPCOS

Leaded

type SFE10.7MFP

@ BIF2 = 40 kHz SFE10.7MFP

@ BIF2 = 40 kHz TBD

CERFIL

SMD

type SFECV10.7MJS-A

@ BIF2 = 150 kHz SFECV10.7MJS-A

@ BIF2 = 150 kHz ±40 k Hz

ceramic filters from Murata

NIP – not in place, may be used optionally

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 12 of 14 EVB Description

Rev. 005 Feb./03

4 Package Dimensions

Fig. 4: LQFP32 (Low profile Quad Flat Package)

All Dimension in mm, coplanaríty < 0.1mm

E1, D1 E, D AA1 A2 e b c L α

αα

min 1.40 0.05 1.35 0.30 0.09 0.45 0°

max 7.00 9.00 1.60 0.15 1.45 0.8 0.45 0.20 0.75 7°

All Dimension in inch, coplanaríty < 0.004”

min 0.055 0.002 0.053 0.012 0.0035 0.018 0°

max 0.276 0.354 0.063 0.006 0.057 0.031 0.018 0.0079 0.030 7°

E1 e

c0.25

(0.0098)

12°

1°

12°

1°

.10 (.004)

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 13 of 14 EVB Description

Rev. 005 Feb./03

5 Reliability Information

Melexis devices are clas sif ied and qualified regar ding suitability for infr ared, vapor phas e and wave solder ing

with usual (63/37 SnPb-) solder (melting point at 183degC).

The following test methods are applied:

• IPC/JEDEC J-STD-020A (issue April 1999)

Moisture/Reflow Sensitivity Classification For Nonhermetic Solid State Surface Mount Devices

• CECC00802 (issue 1994)

Standard Method For The Specification of Surface Mounting Components (SMDs) of Assessed Quality

• MIL 883 Method 2003 / JEDEC-STD-22 Test Method B102

Solderability

For all soldering technologies deviating from above mentioned standard conditions (regarding peak tem-

perature, temperature gradient, temperature profile etc) additional classification and qualification tests have to

be agreed upon with Melexis.

The application of Wave Soldering fo r SMD’s is allowed only after consulting Melexis regarding ass urance of

adhesive strength between device and board.

For more information on manufacturability/solderability see quality page at our website:

http://www.melexis.com/

6 ESD Precautions

Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).

Always observe Electro Static Discharge control procedures whenever handling semiconductor products.

EVB71102

315/433MHz Receiver

Evaluation Board Description

390107110201 Page 14 of 14 EVB Description

Rev. 005 Feb./03

7 Disclaimer

Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its

Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the infor-

mation set forth herein or regarding the f reedom of the described devices from patent infringement. Melexis

reserves the right to change specifications and prices at any time and without notice. T herefore, prior to de-

signing this produc t into a sys tem, it is nec essary to check with Melexis f or current inform ation. This product

is intended for use in normal commercial applications. Applications requiring extended temperature range,

unusual environmental requirements, or high reliability applications, such as military, medical life-support or

life-s us taining equipment are s pec if ic ally not recom mended without additional proc es s ing by Melexis for eac h

application.

The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be

liable to recipient or any third party for any damages, including but not limited to personal injury, property

damage, los s of prof its, loss of us e, interrupt of busines s or indir ect, spec ial incidental or c onsequential dam -

ages, of any kind, in connection with or arising out of the f urnishing, per form anc e or use of the technic al data

herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering of

technical or other services.

For the latest version of this document. Go to our website at

www.melexis.com

Or for additional information contact Melexis Direct:

Europe and Japan: All other locations:

Phone: +32 1367 0495 Phone: +1 603 223 2362

E-mail: sales_europe@melexis.com E-mail: sales_usa@melexis.com

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