MOTOROLA SC {DIODES/OPTOF OL peQfeanv2ss covaass 9 ff 6367255 MOTOROLA Sc s i i DIODES /OPTQ) O1E 79255 D T+2S77 - T6401 = Triacs T6411 Silicon Bidirectional Triode Thyristors T6421 ; nd at geet ce a; a Series ... designed primarily for industrial and military applications for full wave control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power switching systems. Glass Passivated Junctions and Center Gate Fire TRIAGs @ Press Fit, Stud, Isolated Stud Packages 30 AMPERES RMS Gate Triggering Guaranteed In All 4 Modes 200 thru 800 VOLTS MTZ o_ fo Mgt G MAXIMUM RATINGS Rating Symbol Value Unit Repetitive Peak Off-State Voltage, Note 1 VoRM Volts (Ty = 65 to + 100C) Gate Open 76401B, 164118, T6421B 200 T6401D, T6411D, T6421D 400 T6401M, T6411M, T6421M 600 (7 CASE 263-04 : T6401N, T6411N, T6421N 800 STYLE 2 I On-State Current RMS IT(RMS) 30 Amps pRees FIT (Conduction Angle = 360) To = +65C Peak Non-Repetitive Surge Current ITSM 300 Amps (One Full Cycle, 60 Hz) Circuit Fusing (2t 450 As (Ty = 65 to +100C, t = 1.25 to 10 ms) Peak Gate Power Pem 40 Watts Ae ee Pul idth = (Pulse Width = 1 us) 16411 Average Gate Power PGIAV) 0.75 Watt STUD Peak Gate Current Pulse Width < 1 ys) IST 2 Amps Operating Case Temperature Range Tc 65 to +100 C Storage Temperature Range Tstg | 65 to +150 C i Stud Torque _ 30 in. Ib. i CASE 311-02 ' THERMAL CHARACTERISTICS STYLE 2 Sol T6421 U Characteristic Symbol Max nit ISOLATED STUD Thermal Resistance, Junction to Case Pressfit ReJc 0.8 C Stud 0.9 lsolated Stud 1 Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. MOTOROLA THYRISTOR DEVICE DATA 3-330MOTOROLA SC {DIODES/OPTOF OL Ddeese7ass oo7qesh o 6367255 MOTOROLA SC (DIODES/OPTO) O1E 79256 DOS? T6401 T6411 T6421 Series ELECTRICAL CHARACTERISTICS (Tc = 25C, and Either Polarity of MT2 to MT1, unless otherwise noted.) Characteristic Symbol! Min Typ Max Unit Peak Forward or Reverse Blocking Current lpRM- IRRM (Rated Vprm or VarM, gate open} Ty = 25C - - 10 uA . Ty = 100C _ 4 mA Maximum On-State Voltage (Either Direction) - VIM _ 2.1 2.5 Volts (IT = 100 A Peak) Gate Trigger Current (Continuous dc}, Note 1 ict mA (Vp = 12 Vde, RL = 30 Ohms VMT2(+)- G(+)" VaMT2(}- Ve() - 20 50 VmT2(+) YG() Yat2(-}) Ve(+) - 35 80 Gate Trigger Voltage (Continuous dc) (All Trigger Modes) VGT Volts (Vp = 12 Vdc, RL = 30 Ohms) _ 1.35 25 (Vp = Rated Vprm. RL = 125 Ohms, Tc = 100C) 0.2 _ - Holding Current IHo _ - 60 mA (Vp = 12 Vde, Gate Open) (It = 150 mA) Gate Controlled Turn-On Time tgt - 1.7 3 HS (Vp = Rated Vprm. tM = 454, IgT = 200 mA, Rise Time = 0.1 us) Critical Rate of Rise of Commutation Voltage, On-State Conditions dv/dt(c) 3 20 od Vips (di/dt = 16 A/ms, Gate Unenergized, Vp = Rated VpRv. IT(AMS) = 30 A, Tc = Rated Value from Figure 1) Critical Rate of Rise of Off-State Voltage dv/dt Vins (Vp = Rated Vprm,- Exponential Rise, Tc = 100C) T6401B, T6411B, T6421B 40 T6401D, T6411D, T6421D 25 _ _ T6401M, T6411M, T6421M 20 _- _ T6401N, T6411N, T6421N 20 Note 1. All voltage polarities referenced to main terminal 1. FIGURE 1 CURRENT DERATING FIGURE 2 POWER DISSIPATION FULL WAVE SINUSOIDAL WAVEFORM FULL WAVE WAVEFORM ISOLATED STUD P(A), AVERAGE POWER DISSIPATION (WATTS} Tc, MAXIMUM ALLOWABLE CASE TEMPERATURE (C) 0 8 16 24 32 0 8 16 4 32 40 IT(AMS), RMS ON-STATE CURRENT (AMP) IT (RMS), ON-STATE CURRENT (AMP) a sears tree MOTOROLA THYRISTOR DEVICE DATA 3-331 be atone