RD2.0ES~RD39ES
Excel Semiconductor
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Zener diode
Features
1. DO-34 Glass sealed p ackage
This diode can be inserted into a PC board
with a shorter pitch（5mm）
2. Planar process
3. Vz applied E24 st andard
Applications
Circuits for constant volt age, constant current,
waveform clipper, surge absorber, etc.
Absolute Maximum Ratings
Tj=25℃ Parameter Symbol Value Unit
Forward Current If 150 mA
Power Dissipation PV 400 mW
Surge Reverse Power PRSM 100 W
Junction Temperature Tj 175 ℃
Storage Temperature Tstg -65~+175 ℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
RD2.0ES~RD39ES
Excel Semiconductor
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Electrical Characteristics
Tj=25℃ Zener voltage Dynamic
Impedance Knee Dynamic
Impedance Reverse current
Vz (V) Zzt (Ω) Zzk (Ω) IR (μA)
Type
Number
Suffix
Min. Max. Iz (mA) Max. Iz (mA) Max. Iz (mA) Max. VR (V)
- 1.88 2.24
A 1.88 2.12
RD 2.0ES B 2.01 2.24 5 100 5 1000 0.5 120 0.5
- 2.11 2.44
A 2.11 2.34
RD 2.2 ES B 2.22 2.44 5 100 5 1000 0.5 120 0.7
- 2.32 2.65
A 2.32 2.54
RD 2.4 ES B 2.41 2.65 5 100 5 1000 0.5 120 1.0
- 2.52 2.93
A 2.52 2.77
RD 2.7 ES B 2.68 2.93 5 110 5 1000 0.5 100 1.0
- 2.84 3.24
A 2.84 3.08
RD 3.0 ES B 2.99 3.24 5 120 5 1000 0.5 50 1.0
- 3.15 3.54
A 3.15 3.39
RD 3.3 ES B 3.31 3.54 5 120 5 1000 0.5 20 1.0
- 3.46 3.84
A 3.46 3.69
RD 3.6 ES B 3.60 3.84 5 120 5 1100 0.5 10 1.0
- 3.74 4.16
A 3.74 4.01
RD 3.9 ES B 3.89 4.16 5 120 5 1200 0.5 5 1.0
- 4.04 4.57
A 4.04 4.29
B 4.17 4.43
RD 4.3 ES
C 4.30 4.57
5 120 5 1200 0.5 5 1.0
- 4.44 4.93
A 4.44 4.68
B 4.55 4.80
RD 4.7 ES
C 4.68 4.93
5 100 5 1200 0.5 5 1.0
- 4.81 5.37
A 4.81 5.07
B 4.94 5.20
RD 5.1 ES
C 5.09 5.37
5 70 5 1200 0.5 5 1.5
- 5.28 5.91
A 5.28 5.55
B 5.45 5.73
RD 5.6 ES
C 5.61 5.91
5 40 5 900 0.5 5 2.5
- 5.78 6.44
A 5.78 6.09
B 5.96 6.27
RD 6.2 ES
C 6.12 6.44
5 30 5 500 0.5 5 3.0
RD2.0ES~RD39ES
Excel Semiconductor
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Zener voltage Dynamic
Impedance Knee Dynamic
Impedance Reverse current
Vz (V) Zzt (Ω) Zzk (Ω) IR (μA)
Type
Number
Suffix
Min. Max. Iz (mA) Max. Iz (mA) Max. Iz (mA) Max. VR (V)
- 6.29 7.01
A 6.29 6.63
B 6.49 6.83
RD 6.8 ES
C 6.66 7.01
5 25 5 150 0.5 2 3.5
- 6.85 7.67
A 6.85 7.22
B 7.07 7.45
RD 7.5 ES
C 7.29 7.67
5 25 5 120 0.5 0.5 4.0
- 7.53 8.45
A 7.53 7.92
B 7.78 8.19
RD 8.2 ES
C 8.03 8.45
5 20 5 120 0.5 0.5 5.0
- 8.29 9.30
A 8.29 8.73
B 8.57 9.01
RD 9.1 ES
C 8.83 9.30
5 20 5 120 0.5 0.5 6.0
- 9.12 10.39
A 9.12 9.65
B 9.46 10.02
RD 10 ES
C 9.82 10.39
5 20 5 120 0.5 0.2 7.0
- 10.18 11.38
A 10.18 10.71
B 10.50 11.05
RD 11 ES
C 10.82 11.38
5 20 5 120 0.5 0.2 8.0
- 11.13 12.35
A 11.13 11.71
B 11.44 12.03
RD 12 ES
C 11.74 12.35
5 25 5 110 0.5 0.2 9.0
- 12.11 13.66
A 12.11 12.75
B 12.55 13.21
RD 13 ES
C 12.99 13.66
5 25 5 110 0.5 0.2 10
- 13.44 15.09
A 13.44 14.13
B 13.89 14.62
RD 15 ES
C 14.35 15.09
5 25 5 110 0.5 0.2 11
- 14.80 16.51
A 14.80 15.57
B 15.25 16.04
RD 16 ES
C 15.69 16.51
5 25 5 150 0.5 0.2 12
- 16.22 18.33
A 16.22 17.06
B 16.82 17.70
RD 18 ES
C 17.42 18.33
5 30 5 150 0.5 0.2 13
RD2.0ES~RD39ES
Excel Semiconductor
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Zener voltage Dynamic
Impedance Knee Dynamic
Impedance Reverse current
Vz (V) Zzt (Ω) Zzk (Ω) IR (μA)
Type
Number
Suffix
Min. Max. Iz (mA) Max. Iz (mA) Max. Iz (mA) Max. VR (V)
- 18.14 20.45
A 18.14 19.07
B 18.80 19.76
RD 20 ES
C 19.45 20.45
5 30 5 200 0.5 0.2 15
- 20.15 22.63
A 20.15 21.20
B 20.64 21.71
C 21.08 22.17
RD 22 ES
D 21.52 22.63
5 30 5 200 0.5 0.2 17
- 22.05 24.85
A 22.05 23.18
B 22.61 23.77
C 23.12 24.13
RD 24 ES
D 23.63 24.85
5 35 5 200 0.5 0.2 19
- 24.26 27.64
A 24.26 25.52
B 24.97 26.26
C 25.63 26.95
RD 27 ES
D 26.29 27.64
5 45 5 250 0.5 0.2 21
- 26.99 30.51
A 26.99 28.39
B 27.70 29.13
C 28.36 29.82
RD 30 ES
D 29.02 30.51
5 55 5 250 0.5 0.2 23
- 29.68 33.11
A 29.68 31.22
B 30.32 31.88
C 30.90 32.50
RD 33 ES
D 31.49 33.11
5 65 5 250 0.5 0.2 25
- 32.14 35.77
A 32.14 33.79
B 32.79 34.49
C 33.40 35.13
RD 36 ES
D 34.01 35.77
5 75 5 250 0.5 0.2 27
- 34.68 38.52
A 34.68 36.47
B 35.36 37.19
C 36.00 37.85
RD 39 ES
D 36.63 38.52
5 85 5 250 0.5 0.2 30
RD2.0ES~RD39ES
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 5/7
Characteristics
Iz-Zener Current-A
Vz-Zener Voltage-V
Iz-Zener Current-A
Vz-Zener Voltage-V Vz-Zener Voltage-V
Iz-Zener Current-A
Vz-Zener Voltage-V Vz-Zener Voltage-V
Figure 1. Zener current vs.
zener voltage
Figure 2. Zener current vs.
zener voltage
Figure 3. Zener current vs.
zener voltage
Figure 4. Zener current vs.
zener voltage
Figure 5. Zener current vs.
zener voltage
Iz-Zener Current-A
Iz-Zener Current-A
RD2.0ES~RD39ES
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 6/7
P-Power Dissipation - mW
Rth –Thermal Resistance - /w℃
Zz – Dynamic Impedance - Ω
Rz –Vz Temperature Coefficience - %/ ℃
PRSM –Surge Reverse Power - W
tr – Pulse Width -s
Iz – Zener Current - mA Vz-Zener Voltage-V
Ta-Ambient Temperature - ℃ S – Size of P.C. Board –mm2
Figure 6. Power dissipation vs.
ambient temperture
Figure 8. Dynamic impedance vs.
zener current
Figure 9. Zener voltage temperature coefficient vs.
zener voltage
Figure 10. Surge reverse power ratings
Figure 7. Thermal resistance vs.
size of P.C BOARD
RD2.0ES~RD39ES
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 7/7
Dimensions in mm
Standard Glass Case
JEDEC DO-34
Zth – Transient Thermal
Impedance - /W℃
t – Time - s
Figure 11. Transient thermal impedance characteristic
29±1 29±1 2.7±0.3
0.4±0.1
Φ1.8±0.2
Cathode Anode
Cathode identification
