Semiconductor Group 1
NPN Silicon AF Transistors BC 635
… BC 639
5.91
Type Ordering CodeMarking Package1)
Pin Configuration
BC 635
BC 637
BC 639
Q68000-A3360
Q68000-A2285
Q68000-A3361
– TO-92
E C B
123
If desired, selected transistors, type BC 63 ★ –10 (hFE = 63 … 160), or BC 63 ★ –16
(hFE = 100 … 250) are available. Ordering codes upon request.
1) For detailed information see chapter Package Outlines.
●High current gain
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BC 636, BC 638,
BC 640 (PNP) 1
23
Semiconductor Group 2
BC 635
… BC 639
Maximum Ratings
Parameter Values Unit
Collector-emitter voltage V
Peak collector current
Collector current A
Junction temperature ˚C
Total power dissipation, TC = 90 ˚C1) W
Storage temperature range
Collector-base voltage
Thermal Resistance
Junction - ambient1) ≤ 156 K/W
60
1
1.5
0.8 (1)
150
– 65 … + 150
Emitter-base voltage
Base current mA100
Junction - case2) ≤ 75
45 80
6045 100
BC 637BC 635 BC 639
5
Peak base current 200
Symbol
VCE0
ICM
IC
Tj
Ptot
Tstg
VCB0
Rth JA
VEB0
IB
Rth JC
IBM
1) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 3
BC 635
… BC 639
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain
I
C = 5 mA; VCE = 2 V
I
C = 150 mA; VCE = 2 V1)
I
C = 500 mA; VCE = 2 V1)
VCollector-emitter breakdown voltage
I
C = 10 mA BC 635
BC 637
BC 639
V(BR)CE0
45
60
80
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABC 635
BC 637
BC 639
V(BR)CB0
45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 5––
mV
Collector-emitter saturation voltage1)
I
C = 500 mA; IB = 50 mA VCEsat – – 500
–hFE 25
40
25
–
–
–
–
250
–
V
Base-emitter voltage1)
I
C = 500 mA; VCE = 2 V VBE) ––1
nAEmitter cutoff current
VEB = 4 V IEB0 – – 100
AC characteristics
MHzTransition frequency
I
C = 50 mA, VCE = 10 V, f = 20 MHz fT– 100 –
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 4
BC 635
… BC 639
Total power dissipation Ptot =f(TA;TC)
Permissible pulse load RthJA =f(tp)
VCE = 2 V
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
Collector current IC=f(VBE)
Semiconductor Group 5
BC 635
… BC 639
DC current gain hFE =f(IC)
VCE = 2 V
Transition frequency fT=f(IC)
VCE = 10 V, f= 20 MHz
Collector-emitter saturation voltage
VCEsat =f(IC)
hFE = 10
