PN918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO IC 3.0 V 50 mA PD PD 625 mW 1.0 W -65 to +150 C Thermal Resistance TJ, Tstg JA 2.0 C/W Thermal Resistance JC 12.5 C/W MAX 10 UNITS nA Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO BVCBO CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=15V IC=1.0A 30 BVCEO IC=3.0mA 15 BVEBO IE=10A 3.0 VCE(SAT) VBE(SAT) IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA hFE VCE=1.0V, IC=3.0mA 20 fT VCE=10V, IC=4.0mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 600 Cob Cob Cib VEB=0, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz Po VCB=15V, VCB=12V, Gpe NF 30 UNITS V V V V 0.4 V 1.0 V MHz 1.7 pF 3.0 pF 2.0 pF IC=8.0mA, f=500MHz 30 mW IC=6.0mA, f=200MHz VCB=15V, IC=8.0mA, f=500MHz VCE=6.0V, IC=1.0mA, RG=400, f=60kHz 15 dB 25 % 6.0 dB R0 (11-September 2012) PN918 NPN SILICON RF TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (11-September 2012) w w w. c e n t r a l s e m i . c o m